High Pressure studies of the magnetic phase transition in MnSi: revisited

New measurements of AC magnetic susceptibility and DC resistivity of a high quality single crystal MnSi were carried out at high pressure making use of helium as a pressure medium. The form of the AC magnetic susceptibility curves at the magnetic phase transition suddenly changes upon helium solidification. This implies strong sensitivity of magnetic properties of MnSi to non hydrostatic stresses and suggests that the early claims on the existence of a tricritical point at the phase transition line are probably a result of misinterpretation of the experimental data. At the same time resistivity behavior at the phase transition does not show such a significant influence of helium solidification. The sharp peak at the temperature derivative of resistivity, signifying the first order nature of the phase transition in MnSi successfully survived helium crystallization and continued the same way to the highest pressure.Comment: 4 pages, 6 figure

Peculiar behavior of the electrical resistivity of MnSi at the ferromagnetic phase transition

The electrical resistivity of a single crystal of MnSi was measured across its ferromagnetic phase transition line at ambient and high pressures. Sharp peaks of the temperature coefficient of resistivity characterize the transition line. Analysis of these data shows that at pressures to ~0.35 GPa these peaks have fine structure, revealing a shoulder at ~ 0.5 K above the peak. It is symptomatic that this structure disappears at pressures higher than ~0.35 GPa, which was identified earlier as a tricritical poin

Hall Effect Anisotropy in the Paramagnetic Phase of Ho_0.8Lu_0.2B₁₂ Induced by Dynamic Charge Stripes

A detailed study of charge transport in the paramagnetic phase of the cage-cluster dodecaboride Ho0.8Lu0.2B12 with an instability both of the fcc lattice (cooperative Jahn–Teller effect) and the electronic structure (dynamic charge stripes) was carried out at temperatures 1.9–300 K in magnetic fields up to 80 kOe. Four mono-domain single crystals of Ho0.8Lu0.2B12 samples with different crystal axis orientation were investigated in order to establish the singularities of Hall effect, which develop due to (i) the electronic phase separation (stripes) and (ii) formation of the disordered cage-glass state below T*~60 K. It was demonstrated that a considerable intrinsic anisotropic positive component ρanxy appears at low temperatures in addition to the ordinary negative Hall resistivity contribution in magnetic fields above 40 kOe applied along the [001] and [110] axes. A relation between anomalous components of the resistivity tensor ρanxy~ρanxx1.7 was found for H||[001] below T*~60 K, and a power law ρanxy~ρanxx0.83 for the orientation H||[110] at temperatures T S~15 K. It is argued that below characteristic temperature TS~15 K the anomalous odd ρanxy(T) and even ρanxx(T) parts of the resistivity tensor may be interpreted in terms of formation of long chains in the filamentary structure of fluctuating charges (stripes). We assume that these ρanxy(H||[001]) and ρanxy(H||[110]) components represent the intrinsic (Berry phase contribution) and extrinsic (skew scattering) mechanism, respectively. Apart from them, an additional ferromagnetic contribution to both isotropic and anisotropic components in the Hall signal was registered and attributed to the effect of magnetic polarization of 5d states (ferromagnetic nano-domains) in the conduction band of Ho0.8Lu0.2B12