Influence of current reuse LNA circuit parameters on its noise figure

A 2.4 GHz low noise amplifier (LNA) with a bias current reuse technique is proposed in this work. To obtain the optimum noise figure (NF) value, dependence of NF on its most influential LNA parameters has been analyzed. Taking into account the LNA design requirements for other figures of merit, values of the circuit parameters are given for the optimum noise figure

JOURNAL OF AUTOMATIC CONTROL, UNIVERSITY OF BELGRADE, VOL 16:37-40, 2006 © Low-Frequency Noise Of A Dual-Gate Mosfet In Linear Region

Abstract – This paper presents results of low frequency noise measurements for a Dual-Gate MOSFET (DGMOSFET) in linear region. DGMOSFET working conditions are chosen in order to set both inner transistors in linear regime. Results are discussed with the use of the unified 1/f noise model. Index Terms – linear region, 1/f noise, unified model I