Agent Technology in Supply Chains and Networks: An exploration of high potential future applications

This paper reports on an ongoing research project that\ud is aimed at evaluating how software agents can improve\ud performance of supply chains and networks. To conduct\ud this evaluation, first a framework is developed to classify\ud potential applications of software agents to supply\ud networks. The framework was used in workshop sessions\ud with logistics and information systems experts from\ud industry, software/consultancy and academia to identify\ud promising areas for agents. Based on the framework and\ud the outcome of the workshop sessions, this paper presents\ud promising application areas for the near future and\ud beyond

Tales of entrepreneurship : Contributions to understanding entrepreneurial life

Jansen, P.G.W. [Promotor]Steyaert, C. [Promotor]Bossink, B.A.G. [Copromotor

Staging of Major Depressive Disorder

Beekman, A.T.F. [Promotor]Penninx, B.W.J.H. [Promotor]Milaneschi, Y. [Copromotor

Balanced ternary addition using a gated silicon nanowire

We demonstrate the proof of principle for a ternary adder using silicon metal-on-insulator single electron transistors (SET). Gate dependent rectifying behavior of a single electron transistor results in a robust three-valued output as a function of the potential of the SET island. Mapping logical, ternary inputs to the three gates controlling the potential of the SET island allows us to perform complex, inherently ternary operations, on a single transistor

Engineered valley-orbit splittings in quantum confined nanostructures in silicon

An important challenge in silicon quantum electronics in the few electron regime is the potentially small energy gap between the ground and excited orbital states in 3D quantum confined nanostructures due to the multiple valley degeneracies of the conduction band present in silicon. Understanding the "valley-orbit" (VO) gap is essential for silicon qubits, as a large VO gap prevents leakage of the qubit states into a higher dimensional Hilbert space. The VO gap varies considerably depending on quantum confinement, and can be engineered by external electric fields. In this work we investigate VO splitting experimentally and theoretically in a range of confinement regimes. We report measurements of the VO splitting in silicon quantum dot and donor devices through excited state transport spectroscopy. These results are underpinned by large-scale atomistic tight-binding calculations involving over 1 million atoms to compute VO splittings as functions of electric fields, donor depths, and surface disorder. The results provide a comprehensive picture of the range of VO splittings that can be achieved through quantum engineering.Comment: 4 pages, 4 figure