SiGeナノ構造を用いた熱電デバイスのための直接基板張り合わせ法による酸化膜上極薄Ge層の作製

博士(学術)doctoral創造科学技術大学院静岡大学甲第916号non

Phonon-drag Contribution to Seebeck Coefficient of Ge-on-insulator Substrate Fabricated by Wafer Bonding Process

In order to build high-sensitivity infrared photodetectors using SiGe nanowires, we investigate the thermoelectric characteristics of Ge-on-insulator (GOI) layers as a reference for SiGe. We fabricate p-type GOI substrates with an impurity concentration of 1016-1018cm-3 by a wafer-bonding process using Ge and oxidized Si wafers. Annealing treatment is performed in order to further increase the bonding strength of Ge/SiO2 interface. We measure the Seebeck coefficient in the temperature range of 290-350 K. The Seebeck coefficient of the GOI layers is very close to the theoretical value for Ge, calculated on the basis of carrier transport. Hence, there is a small phonon-drag effect in GOI. On the other hand, the effect of phonon drag on the Seebeck coefficient of Si is usually significant. These results likely stem from the differences between phonon velocity, phonon mean-free-path, and hole mobility between Ge and Si

Construction of a Novel Method of Measuring Thermal Conductivity for Nanostructures

With the aim of characterizing the thermal conduction in a nanometer-scaled materials, we have constructed a novel method on the basis of an ac calorimetric method. In this method, periodic sample heating is performed by light irradiation and the corresponding periodic temperature is detected by infrared irradiative thermometer. This makes us measure the thermal diffusivity out of contact with the objective sample. In the present study, we confirm to measure the thermal diffusivity of bulk Si and Cu by this non-contact method with halogen-lamp irradiation. In determining the thermal diffusivity from the relationship between distance deviation and delay time, the simplest wave equation is used, and the obtained values of thermal diffusivity for Si and Cu are close to those reported. Therefore, this non-contact method is useful for evaluating the thermal conduction and applicable for nanometer-scaled materials by improving local heating and local detecting systems