Enhancement of the Hall-Lorenz number in optimally doped YBa2Cu3O_7-d

Electronic heat transport in the normal state of a high-quality single crystal of optimally-doped superconductor YBa2Cu3O6.95 was studied by measurements of longitudinal and transverse transport coefficients. For the temperature range from 100 to 300 K, the Hall-Lorenz number (Lxy) depends weakly on temperature and is about two times larger than the Sommerfeld value of the Lorenz number Lo = (pi^2)/3. Our results can be interpreted using a Fermi liquid model when effects of the pseudogap that opens at the Fermi level are included. However, we find that the bipolaron model can also explain both the enhanced value and the weak temperature dependence of the Hall-Lorenz number.Comment: Accepted for publication in Europhysics Letters; 16 pages, 2 figure

Enhancement of the Critical Current Density of YBa2Cu3Ox Superconductors under Hydrostatic Pressure

The dependence of the critical current density Jc on hydrostatic pressure to 0.6 GPa is determined for a single 25-degree [001]-tilt grain boundary in a bicrystalline ring of nearly optimally doped melt-textured YBa2Cu3Ox. Jc is found to increase rapidly under pressure at +20 %/GPa. A new diagnostic method is introduced (pressure-induced Jc relaxation) which reveals a sizeable concentration of vacant oxygen sites in the grain boundary region. Completely filling such sites with oxygen anions should lead to significant enhancements in Jc.Comment: revised manuscript, graphic errors in figures correcte

Two-dimensional superconductor-insulator transition in bulk single-crystal YBa_2Cu_3O_(6.38)

We use a magnetic field to tune a highly anisotropic single crystal of oxygen-deficient YBa_2Cu_3O_(7-δ) with a transition temperature of 2 K through the superconductor-insulator transition. The sheet resistance scales with temperature, 0.05≤T≤1.0 K, and field, 0≤H≤94 kOe, in a manner predicted by a theory for quantum phase transitions in disordered two-dimensional superconductors

Influence of oxygen ordering kinetics on Raman and optical response in YBa_2Cu_3O_{6.4}

Kinetics of the optical and Raman response in YBa_2Cu_3O_{6.4} were studied during room temperature annealing following heat treatment. The superconducting T_c, dc resistivity, and low-energy optical conductivity recover slowly, implying a long relaxation time for the carrier density. Short relaxation times are observed for the B_{1g} Raman scattering -- magnetic, continuum, and phonon -- and the charge transfer band. Monte Carlo simulations suggest that these two relaxation rates are related to two length scales corresponding to local oxygen ordering (fast) and long chain and twin formation (slow).Comment: REVTeX, 3 pages + 4 PostScript (compressed) figure

Intrinsic electronic superconducting phases at 60 K and 90 K in double-layer YBa2_2Cu3_3O6+δ_{6+\delta}

We study superconducting transition temperature ($T_c$) of oxygen-doped double-layer high-temperature superconductors YBa$_2$Cu$_3$O$_{6+\delta}$ (0 $\le$ $\delta$ $\le$ 1) as a function of the oxygen dopant concentration ($\delta$) and planar hole-doping concentration ($P_{pl}$). We find that $T_c$, while clearly influenced by the development of the chain ordering as seen in the $T_c$ $vs.$ $\delta$ plot, lies on a universal curve originating at the critical hole concentration ($P_c$) = 1/16 in the $T_c$ $vs.$ $P_{pl}$ plot. Our analysis suggests that the universal behavior of $T_c$($P_{pl}$) can be understood in terms of the competition and collaboration of chemical-phases and electronic-phases that exist in the system. We conclude that the global superconductivity behavior of YBa$_2$Cu$_3$O$_{6+\delta}$ as a function of doping is electronically driven and dictated by pristine electronic phases at magic doping numbers that follow the hierarchical order based on $P_c$, such as 2 $\times$ $P_c$, 3 $\times$ $P_c$ and 4 $\times$ $P_c$. We find that there are at least two intrinsic electronic superconducting phases of $T_c$ = 60 K at 2 $\times$ $P_c$ = 1/8 and $T_c$ = 90 K at 3 $\times$ $P_c$ = 3/16.Comment: 4 pages, 2 figure

Band anticrossing in GaNxSb1–x

Fourier transform infrared absorption measurements are presented from the dilute nitride semiconductor GaNSb with nitrogen incorporations between 0.2% and 1.0%. The divergence of transitions from the valence band to E– and E+ can be seen with increasing nitrogen incorporation, consistent with theoretical predictions. The GaNSb band structure has been modeled using a five-band k·p Hamiltonian and a band anticrossing fitting has been obtained using a nitrogen level of 0.78 eV above the valence band maximum and a coupling parameter of 2.6 eV