Controlled oxide removal for the preparation of damage-free InAs(110) surfaces

Controlled oxide removal from InAs(110) surfaces using atomic hydrogen (H*) has been achieved by monitoring the contaminant vibrational modes with high resolution electron energy loss spectroscopy (HREELS). The contributing oxide vibrational modes of the partially H* cleaned surface have been identified. Following hydrocarbon desorption during preliminary annealing at 360 °C, exposure to atomic hydrogen at 400 °C initially removes the arsenic oxides and indium suboxides; complete indium oxide removal requires significantly higher hydrogen doses. After a total molecular hydrogen dose of 120 kL, a clean, ordered surface, exhibiting a sharp (1×1) pattern, was confirmed by low energy electron diffraction and x-ray photoelectron spectroscopy. Energy dependent HREELS studies of the near-surface electronic structure indicate that no residual electronic damage or dopant passivation results from the cleaning process

Electron dynamics in InNxSb1–x

Electron transport properties in InNxSb1–x are investigated for a range of alloy compositions. The band structure of InNxSb1–x is modeled using a modified k·p Hamiltonian. This enables the semiconductor statistics for a given x value to be calculated from the dispersion relation of the E– subband. These calculations reveal that for alloy compositions in the range 0.001<=x<=0.02 there is only a small variation of the carrier concentration at a given plasma frequency. A similar trend is observed for the effective mass at the Fermi level. Measurements of the plasma frequency and plasmon lifetime for InNxSb1–x alloys enable the carrier concentration and the effective mass at the Fermi level to be determined and a lower limit for the electron mobility to be estimated

Origin of the n-type conductivity of InN: the role of positively charged dislocations

As-grown InN is known to exhibit high unintentional n-type conductivity. Hall measurements from a range of high-quality single-crystalline epitaxially grown InN films reveal a dramatic reduction in the electron density (from low 1019 to low 1017 cm–3) with increasing film thickness (from 50 to 12 000 nm). The combination of background donors from impurities and the extreme electron accumulation at InN surfaces is shown to be insufficient to reproduce the measured film thickness dependence of the free-electron density. When positively charged nitrogen vacancies (VN+) along dislocations are also included, agreement is obtained between the calculated and experimental thickness dependence of the free-electron concentration

Network Security Devices and Protocols Using State Model Diagrams

Network security is concerned with protecting sensitive information, limiting unauthorised access, and reinforcing network performance. An important factor in network security is encryption. Internet Security Protocol (IPSec) is the de facto open standard for encryption and replaces the older Cisco Encryption Technology (CET). Both encryption protocols are typically implemented and managed using the text based Command Line Interface (CLI). A graphical user interface (GUI) is available; however, it is not routinely used. Regardless of whether the CLI or GUI is used, both encryption suites are complex to implement and manage. State Model Diagrams (SMDs) were developed and successfully used as the pedagogical foundation of internetworking technologies. SMDs integrate pertinent output from devices and protocol finite state information. SMDs are modular and hierarchical models thereby providing top down deconstruction as a cascaded structure. In terms of ease of use, hyperlinks may be used to navigate between different state tables and diagrams. Moreover, as hierarchical model characteristics allow technical detail to be presented and integrated to assist in managing devices. In this paper, SMDs were used to evaluate CET and IPSec via experiments in order to determine their potential value as network management tool

Economic Sustainability of Remote Access Networking Classrooms

Within the higher education domain, there is a prevalent belief that e-learning, virtual classroom and tele-education are essential requirements for the long-term effectiveness and success of educational institutions. Many information technologies have been adopted to assist studying and learning remotely and are hence potentially beneficial to students, teachers and educational providers. For educational providers, the benefits are that there are no physical or geographical limits to the number of students that can be enrolled in a course of study. However, within the field of network technology, students must actually use network devices during their studies. This is important not only because it significantly enhances student learning, but also within this field, employers expect students to have practical ‗hands-on‘ experience. Software simulators are available but they cannot provide students with the necessary practical experience of connecting together the physical devices. Despite the requirements to provide a ‗hands-on\u27 approach it effectively eliminates remote on-line students. Edith Cowan University (ECU) invested over AUD$350,000 in dedicated network teaching laboratories, which are considered to be of a \u27world-class\u27 standard. An access server has been used to provide remote students with access to this equipment. Significantly it is also possible to view the actual network devices by means of a webcam. Whilst remote access to equipment has been possible students only interact via a computer screen. This work allows students to interact by means of Webcam (visual) and Voice over Internet Protocol (VoIP) (audio). Work to date has consisted of establishing the appropriate infrastructure and testing the communication links. Further trials are planned for semester 2, 2008. Traditional remote access can only operate via Command Line Interface (CLI), this can be difficult for many students to practice and gain experience in computer network and internetworking. In effect on-line students will be able to conduct their workshops on a remotely located \u27world class\u27 network laboratory. For students, the on-line curriculum is available twenty four hours a day; there is typically on-line support, and software is now available allowing access to recorded lectures

Core-level photoemission spectroscopy of nitrogen bonding in GaNxAs1–x alloys

The nitrogen bonding configurations in GaNxAs1–x alloys grown by molecular beam epitaxy with 0.07=0.03, the nitrogen is found to exist in a single bonding configuration – the Ga–N bond; no interstitial nitrogen complexes are present. The amount of nitrogen in the alloys is estimated from the XPS using the N 1s photoelectron and Ga LMM Auger lines and is found to be in agreement with the composition determined by x-ray diffraction

X-ray photoemission spectroscopy determination of the InN/yttria stabilized cubic-zirconia valence band offset

The valence band offset of wurtzite InN(0001)/yttria stabilized cubic-zirconia (YSZ)(111) heterojunctions is determined by x-ray photoemission spectroscopy to be 1.19±0.17 eV giving a conduction band offset of 3.06±0.20 eV. Consequently, a type-I heterojunction forms between InN and YSZ in the straddling arrangement. The low lattice mismatch and high band offsets suggest potential for use of YSZ as a gate dielectric in high-frequency InN-based electronic devices

Bandgap and effective mass of epitaxial cadmium oxide

The bandgap and band-edge effective mass of single crystal cadmium oxide, epitaxially grown by metal-organic vapor-phase epitaxy, are determined from infrared reflectivity, ultraviolet/visible absorption, and Hall effect measurements. Analysis and simulation of the optical data, including effects of band nonparabolicity, Moss-Burstein band filling and bandgap renormalization, reveal room temperature bandgap and band-edge effective mass values of 2.16±0.02 eV and 0.21±0.01m0 respectively