5 research outputs found
Electronic and structural properties of the InP(100)(2x4) surface studied by core-level photoemission and scanning tunneling microscopy
Electronic and structural properties of the InP(100)(2x4) surface studied by core-level photoemission and scanning tunneling microscopy
A comparative study of clean and Bi-stabilized InP(100)(2 x 4) surfaces by the core-level photoelectron spectroscopy
The bismuth-stabilized (2 x 4)-reconstructed InP(100) surface [Bi/InP(100)(2 x 4)] has been studied by synchrotron-radiation core-level photoelectron spectroscopy. The spectra are compared with previous core-level data obtained on a clean InP(100)(2 x 4) surface. The findings support that the P 2p surface-core-level shift (SCLS) of the clean InP(100)(2 x 4), which has higher kinetic energy than the bulk emission, arises from the third-layer P atoms and that the second P 2p SCLS, which has lower kinetic energy than the bulk, arises from the top-layer P atoms. Similar In 4d SCLSs are found on the clean and Bi-stabilized InP(100)(2 x 4) surfaces, indicating that these shifts contain contributions of the In atoms that lie in the second and/or fourth layers. In addition to this, the results improve our understanding of the atomic structure of the Bi/InP(100)(2 x 4) surface and lead to refined surface models which include Bi-Bi and Bi-P dimers. (C) 2007 Elsevier B.V. All rights reserved