The polarization approach to registration femtosecond time slots based stimulated photon echo on the exciton states

It is reported about the first experiments on the registration of a femtosecond time interval using the effect of non-Faraday rotation of the plane polarization of the stimulated photon echo. The experiment was performed at room temperature in a three-layer semiconductor film thickness of 300 nm, obtained by magnetron sputtering. The fundamental difference of this effect from the Faraday’s effect was shown. We give conclusions about the possibility of femtosecond time intervals registration at room temperature with an accuracy of 25 fs in the polarization principle of action, rather than spectral

Long–lived femtosecond photon echo in thin films on localized exciton states at room temperature

Long–lived femtosecond photon echo was excited at room temperature in a two–photon regime on the charged exciton states (trion type) localized on the surface defects of a three–layer textured ZnO/Si(B)/Si(P) film with the thickness of each layer at 100 nm in a longitudinal uniform magnetic field. The irreversible longitudinal relaxation time T1 for the long–lived photon echo regime was of the order of 40 ps, whereas when measured with the help of the stimulated photon echo generated in the single–photon mode, the value was found not to exceed 600 fs

Long–lived femtosecond photon echo in thin films on localized exciton states at room temperature

Long–lived femtosecond photon echo was excited at room temperature in a two–photon regime on the charged exciton states (trion type) localized on the surface defects of a three–layer textured ZnO/Si(B)/Si(P) film with the thickness of each layer at 100 nm in a longitudinal uniform magnetic field. The irreversible longitudinal relaxation time T1 for the long–lived photon echo regime was of the order of 40 ps, whereas when measured with the help of the stimulated photon echo generated in the single–photon mode, the value was found not to exceed 600 fs

Magneto-optical properties of the photon echo: status of research and prospects of application

The results of the study of the polarization properties of the stimulated photon echo (SPE) excited at room temperature on free excitons and exciton states localized on surface defects of textured thin films are reported. The results of observation and investigation of the effect of the non-Faraday rotation of a femtosecond SPE in a textured thin film are presented. The physical processes occurring under the Faraday effect and the effect of the non-Faraday rotation of the photon echo (PE) polarization plane are compared

Magneto-optical properties of the photon echo: status of research and prospects of application

The results of the study of the polarization properties of the stimulated photon echo (SPE) excited at room temperature on free excitons and exciton states localized on surface defects of textured thin films are reported. The results of observation and investigation of the effect of the non-Faraday rotation of a femtosecond SPE in a textured thin film are presented. The physical processes occurring under the Faraday effect and the effect of the non-Faraday rotation of the photon echo (PE) polarization plane are compared

Study of the trion spectral lines broadening in the thin Si(p)/Si(b)/ZnO film caused by the exciton-phonon interaction and other factors

Experiments were carried out to study the contribution of the phonon wing to the uniform width of exciton states localized at room temperature on surface defects of the crystal lattice of thin single-layer and three-layer films. Technological studies were carried out to reproduce the parameters of a three-layer thin textured Si (P) / Si (B) / ZnO film to create a technology for the production of femtosecond time interval recorders based on the non-Faraday rotation of the polarized vector of the stimulated photon echo. The results of technological methods for studying the physics of the formation of trion states are discussed

Study of the trion spectral lines broadening in the thin Si(p)/Si(b)/ZnO film caused by the exciton-phonon interaction and other factors

Experiments were carried out to study the contribution of the phonon wing to the uniform width of exciton states localized at room temperature on surface defects of the crystal lattice of thin single-layer and three-layer films. Technological studies were carried out to reproduce the parameters of a three-layer thin textured Si (P) / Si (B) / ZnO film to create a technology for the production of femtosecond time interval recorders based on the non-Faraday rotation of the polarized vector of the stimulated photon echo. The results of technological methods for studying the physics of the formation of trion states are discussed

The polarization approach to registration femtosecond time slots based stimulated photon echo on the exciton states

It is reported about the first experiments on the registration of a femtosecond time interval using the effect of non-Faraday rotation of the plane polarization of the stimulated photon echo. The experiment was performed at room temperature in a three-layer semiconductor film thickness of 300 nm, obtained by magnetron sputtering. The fundamental difference of this effect from the Faraday’s effect was shown. We give conclusions about the possibility of femtosecond time intervals registration at room temperature with an accuracy of 25 fs in the polarization principle of action, rather than spectral