C12/02- and Cl2-based Inductively Coupled Plasma Etching of Photonic Crystals in InP: Sidewall Passivation

We have fabricated two-dimensional photonic crystals in InP-based materials with Clz-based inductively coupled plasma etching. To obtain vertical sidewalls, we employ sidewall passivation through addition of Nz or U2 to the plasma. With the Clz/Oz-process we are able to etch 3.2 pm deep holes that have nearly cylindrical shape in the upper 2 pm. The first optical results illustrate the feasibility of our approach, showing over 30 dB transmission reduction in the rK-stopband

Helium-ion-beam-induced growth of 3-dimensional AFM probes

QN/Kavli Nanolab DelftStructural Optimization and Mechanic

Inductively coupled plasma etching of deep photonic crystal holes in InP using Cl2

We have investigated ICP-etching of deep photonic crystal holes in InP using solely Cl2 as supplied etching gas. The influence of process parameters on hole geometry is discussed and optical test results are reporte