Infrared detectors with poly(3,4-ethylenedioxythiophene)/poly(styrene sulfonic acid) (PEDOT/PSS) as the active material

Large area (3×3mm2) infrared detectors which present a fast rise of their output upon pulsed excitation can be made by using PEDOT/PSS with a low surface resistance. Thus, the action of the infrared sensitive device is based on a change in resistance after photo-excitation of charge carriers in PEDOT/PS via their low-energy absorption features. The absence of any measurable delay in the response of the device is consistent with the view that the charges on the polymer chain are responsible for the absorption of infrared radiation

Infrared detectors with poly(3,4-ethylenedioxythiophene)/poly(styrene sulfonic acid) (PEDOT/PSS) as the active material

Large area (3×3mm2) infrared detectors which present a fast rise of their output upon pulsed excitation can be made by using PEDOT/PSS with a low surface resistance. Thus, the action of the infrared sensitive device is based on a change in resistance after photo-excitation of charge carriers in PEDOT/PS via their low-energy absorption features. The absence of any measurable delay in the response of the device is consistent with the view that the charges on the polymer chain are responsible for the absorption of infrared radiation

Electron transport in a methanofullerene

The current-voltage characteristics of methanofullerene [6,6]-phenyl C-61-butyric acid methyl ester (PCBM)-based devices are investigated as a function of temperature. The occurrence of space-charge limited current enables a direct determination of the electron mobility. At room temperature, an electron mobility Of mu(e) = 2 x 10(-7) m(2) V-1 s(-1) has been obtained. This electron mobility is more than three orders of magnitude larger than the hole mobility of donor-type conjugated polymer poly(2-methoxy-5-(3',7'-dimethyloctyloxy)-p-phenylene vinylene) (OC1C10-PPV). As a result, the dark current in PCBM/OC1C10-PPV based devices is completely dominated by electrons. The observed field and temperature-dependence of the electron mobility 1 of PCBM can be described with a Gaussian disorder model. This provides information about the energetic disorder and average transport-site separation in PCBM

Electron Transport In A Methanofullerene

The current-voltage characteristics of methanofullerene [6,6]-phenyl C61-butyric acid methyl ester (PCBM)-based devices are investigated as a function of temperature. The occurrence of space-charge limited current enables a direct determination of the electron mobility. At room temperature, an electron mobility of μe = 2 × 10-7 m2 V-1 s-1 has been obtained. This electron mobility is more than three orders of magnitude larger than the hole mobility of donor-type conjugated polymer poly(2-methoxy-5-(3',7'-dimethyloctyloxy)-p-phenylene vinylene) (OC1C10-PPV). As a result, the dark current in PCBM/OC1C10-PPV based devices is completely dominated by electrons. The observed field and temperature-dependence of the electron mobility of PCBM can be described with a Gaussian disorder model. This provides information about the energetic disorder and average transport-site separation in PCBM.