Corrections to the universal behavior of the Coulomb-blockade peak splitting for quantum dots separated by a finite barrier

Building upon earlier work on the relation between the dimensionless interdot channel conductance g and the fractional Coulomb-blockade peak splitting f for two electrostatically equivalent dots, we calculate the leading correction that results from an interdot tunneling barrier that is not a delta-function but, rather, has a finite height V and a nonzero width xi and can be approximated as parabolic near its peak. We develop a new treatment of the problem for g much less than 1 that starts from the single-particle eigenstates for the full coupled-dot system. The finiteness of the barrier leads to a small upward shift of the f-versus-g curve at small values of g. The shift is a consequence of the fact that the tunneling matrix elements vary exponentially with the energies of the states connected. Therefore, when g is small, it can pay to tunnel to intermediate states with single-particle energies above the barrier height V. The correction to the zero-width behavior does not affect agreement with recent experimental results but may be important in future experiments.Comment: Title changed from ``Non-universal...'' to ``Corrections to the universal...'' No other changes. 10 pages, 1 RevTeX file with 2 postscript figures included using eps

Incoherent tunnelling through two quantum dots with Coulomb interaction

The Ohmic conductance and current through two quantum dots in series is investigated for the case of incoherent tunnelling. A generalised master equation is employed to include the discrete nature of the energy levels. Regions of negative differential conductance can occur in the I-V characteristics. Transport is dominated by matching energy levels, even when they do not occur at the charge degeneracy points.Comment: RevTeX + epsf.sty + 13 figure

Smearing of Coulomb Blockade by Resonant Tunneling

We study the Coulomb blockade in a grain coupled to a lead via a resonant impurity level. We show that the strong energy dependence of the transmission coefficient through the impurity level can have a dramatic effect on the quantization of the grain charge. In particular, if the resonance is sufficiently narrow, the Coulomb staircase shows very sharp steps even if the transmission through the impurity at the Fermi energy is perfect. This is in contrast to the naive expectation that perfect transmission should completely smear charging effects.Comment: 4 pages, 3 figure

Conductance oscillations in tunnel-coupled quantum dots in the quantum Hall regime

We present measurements of transport through two tunnel-coupled quantum dots of different sizes connected in series in a strong, variable, perpendicular magnetic field. Double dot conductance was measured both as a function of magnetic field, which was varied across the filling factor nu = 4 quantum Hall plateau, and as a function of charge induced evenly on the two dots. The conductance peaks undergo position shifts and height modulations as the magnetic field is varied. These shifts and modulations form a pattern that repeats over large ranges of magnetic field and with the addition of double dot charge. The robust pattern repetition is consistent with a frequency locking effect.Comment: 12 pages, 4 figure

Coulomb effects in tunneling through a quantum dot stack

Tunneling through two vertically coupled quantum dots is studied by means of a Pauli master equation model. The observation of double peaks in the current-voltage characteristic in a recent experiment is analyzed in terms of the tunnel coupling between the quantum dots and the coupling to the contacts. Different regimes for the emitter chemical potential indicating different peak scenarios in the tunneling current are discussed in detail. We show by comparison with a density matrix approach that the interplay of coherent and incoherent effects in the stationary current can be fully described by this approach.Comment: 6 pages, 6 figure

Non Equilibrium Electronic Distribution in Single Electron Devices

The electronic distribution in devices with sufficiently small diemnsions may not be in thermal equilibrium with their surroundings. Systems where the occupancies of electronic states are solely determined by tunneling processes are analyzed. It is shown that the effective temperature of the device may be higher, or lower, than that of its environment, depending on the applied voltage and the energy dependence of the tunneling rates. The I-V characteristics become asymmetric. Comparison with recent experiments is made

Correlated charge polarization in a chain of coupled quantum dots

Coherent charge transfer in a linear array of tunnel-coupled quantum dots, electrostatically coupled to external gates, is investigated using the Bethe ansatz for a symmetrically biased Hubbard chain. Charge polarization in this correlated system is shown to proceed via two distinct processes: formation of bound states in the metallic phase, and charge transfer processes corresponding to a superposition of antibound states at opposite ends of the chain in the Mott-insulating phase. The polarizability in the insulating phase of the chain exhibits a universal scaling behavior, while the polarization charge in the metallic phase of the model is shown to be quantized in units of $e/2$.Comment: 9 pages, 3 figures, 1 tabl

Resonant Photon-Assisted Tunneling Through a Double Quantum Dot: An Electron Pump From Spatial Rabi Oscillations

The time average of the fully nonlinear current through a double quantum dot, subject to an arbitrary combination of ac and dc voltages, is calculated exactly using the Keldysh nonequilibrium Green function technique. When driven on resonance, the system functions as an efficient electron pump due to Rabi oscillation between the dots. The pumping current is maximum when the coupling to the leads equals the Rabi frequency.Comment: 6 pages, REVTEX 3.0, 3 postscript figure

A New Class of Resonances at the Edge of the Two Dimensional Electron Gas

We measure the frequency dependent capacitance of a gate covering the edge and part of a two-dimensional electron gas in the quantum Hall regime. In applying a positive gate bias, we create a metallic puddle under the gate surrounded by an insulating region. Charging of the puddle occurs via electron tunneling from a metallic edge channel. Analysis of the data allows direct extraction of this tunneling conductance. Novel conductance resonances appear as a function of gate bias. Samples with gates ranging from 1-170~$\mu$m along the edge display strikingly similar resonance spectra. The data suggest the existence of unexpected structure, homogeneous over long length scales, at the sample edge.Comment: 13 pages (revtex) including 4 figure