Systematic TLM Measurements of NiSi and PtSi Specific Contact Resistance to n- and p-Type Si in a Broad Doping Range

We present the data on specific silicide-to-silicon contact resistance (ρc) obtained using optimized transmission-line model structures, processed for a broad range of various n- and p-type Si doping levels, with NiSi and PtSi as the silicides. These structures, despite being attractive candidates for embedding in the CMOS processes, have not been used for NiSi, which is the material of choice in modern technologies. In addition, no database for NiSi–silicon contact resistance exists, particularly for a broad range of doping levels. This letter provides such a database, using PtSi extensively studied earlier as a reference

Formation of Co-Si intermetallics in bulk diffusion couples Part II. Manifestations of the Kirkendall effect accompanying reactive diffusion

The Kirkendall effect-induced migration of inert markers during a diffusion-controlled growth of Co¯Si intermetallics was studied at 1100°C. It is demonstrated experimentally that more than one Kirkendall marker plane can appear within the newly formed Co-silicide layers. It is also shown that, under specific conditions, a marker plane cannot develop at all in any of the product phases. The marker behaviour is discussed in terms of the velocity of the Kirkendall frame of reference relative to the laboratory-fixed (Matano) frame. A phenomenological approach is presented to predict the number and positions of the Kirkendall marker planes developing in a multiphase diffusion zone

Formation of Co-Si intermetallics in bulk diffusion couples Part II. Manifestations of the Kirkendall effect accompanying reactive diffusion

The Kirkendall effect-induced migration of inert markers during a diffusion-controlled growth of Co¯Si intermetallics was studied at 1100°C. It is demonstrated experimentally that more than one Kirkendall marker plane can appear within the newly formed Co-silicide layers. It is also shown that, under specific conditions, a marker plane cannot develop at all in any of the product phases. The marker behaviour is discussed in terms of the velocity of the Kirkendall frame of reference relative to the laboratory-fixed (Matano) frame. A phenomenological approach is presented to predict the number and positions of the Kirkendall marker planes developing in a multiphase diffusion zone

The Kirkendall Effect in Multiphase Systems

The manifestation of the Kirkendall effect in multiphase diffusion couples of the Ti-Ni and Co-Si systems is discussed in terms of the velocity of the Kirkendall frame of reference relative to the laboratory-fixed frame of reference. It was found that, in the case of a Co/CoSi2 couple after annealing at 1100°C, two "Kirkendall" planes appeared in different prodct layers. The same was observed in a Ti/Ni diffusion coupled annealed at 850°C. On the contrary, in a Co/Co52Si48 reaction couple, the Kirkendall plane was found in none of the product layers. ThO2-particles, introduced between the initial end-members prior to the heat treatment, ended up at the e-Co/Co2Si interface. These phenomena can be predicted by the approach presented in this article