Physics-based simulation of narrow and wide band gap photonic devices

Historically, infrared (IR) detector technologies are connected mainly with controlling and night-vision problems: in a first stage, applications concerned simply with detection of IR radiation, but very soon capabilities to form IR images were developed, opening the way to systems for recognition and surveillance, especially for military purposes. Since the last decade of the twentieth century, the use of IR imaging systems for civil and peaceful purposes have increased continuously: these include medical and industrial applications, detection of earth resources, earth and universe sciences, etc. As an example, IR imaging is widely used in astronomy, to study interstellar medium and first-stages of stellar evolution; in medicine, IR thermography – IR imaging of the human body – is employed to detect cancers or other trauma; IR detectors are also widely used in automotive industry, chemical process monitoring, global monitoring of environmental pollution and climate changes, etc. The discovery in 1959 by Lawson and co-workers of the wide tunability of the HgCdTe alloy allowed this compound to become one of the most important and versatile materials for detector applications over the entire IR range. A critical contribution to research is given by Technology Computer-Aided Design (TCAD), modeling and simulation. In the first part of this thesis, I present the main part of my research activity, focused on the development of abilities and methodologies for the simulation of realistic three-dimensional HgCdTe-based infrared photodetectors. The purpose is the investigation of generation-recombination (GR) mechanisms and modeling of spectral photoresponse in narrow-gap HgCdTe-based photodetectors, with one-, two and three-dimensional (1D, 2D, 3D) realistic TCAD models (Chapters 1-5). Another important topic of industrial research in semiconductor physics deals with nitride-based light-emitting diodes (LEDs). From automotive to streetlights, from lights in our houses to the displays of TVs and smartphones, LED-based technology is making its way in the market. This proliferation would have been impossible without GaN-based LEDs, whose invention by Isamu Akasaki, Hiroshi Amano and Shuji Nakamura has been rewarded with the 2014 Nobel Prize in Physics. Nevertheless, GaN-based LEDs performanceis limited by a reduction (droop) of their internal quantum efficiency (IQE) as the driving current density is increased beyond 10 A/cm2, whose physical origin is still under intense debate. In the second part of this thesis, I present a quantum model, based on condensed matter many-body theory, that allowed to obtain the electron capture time and hot-electron intraband relaxation times in a quantum well (QW)-barrier heterostructure, for longitudinal optic (LO) phonon emission, as function of carrier density. The interaction was described in the Single Plasmon Pole of the Random Phase Approximation, retaining the full density-, energy- and wavevector-dependent form of the dielectric function (Chapters 6-7)

Trench width dependant deeply etched surface-defined InP gratings for low-cost high speed DFB/DBR

In this paper we are reporting a fabrication process for multi-section telecom lasers based on surface defined lateral gratings, which is compatible with low-cost high-throughput nano-imprint lithography. A new grating definition process is developed, which allow a better control of the cross section geometry to obtain higher coupling strength

Correlating electroluminescence characterization and physics-based models of InGaN/GaN LEDs: Pitfalls and open issues

Electroluminescence (EL) characterization of InGaN/GaN light-emitting diodes (LEDs), coupled with numerical device models of different sophistication, is routinely adopted not only to establish correlations between device efficiency and structural features, but also to make inferences about the loss mechanisms responsible for LED efficiency droop at high driving currents. The limits of this investigative approach are discussed here in a case study based on a comprehensive set of current- and temperature-dependent EL data from blue LEDs with low and high densities of threading dislocations (TDs). First, the effects limiting the applicability of simpler (closed-form and/or one-dimensional) classes of models are addressed, like lateral current crowding, vertical carrier distribution nonuniformity, and interband transition broadening. Then, the major sources of uncertainty affecting state-of-the-art numerical device simulation are reviewed and discussed, including (i) the approximations in the transport description through the multi-quantum-well active region, (ii) the alternative valence band parametrizations proposed to calculate the spontaneous emission rate, (iii) the difficulties in defining the Auger coefficients due to inadequacies in the microscopic quantum well description and the possible presence of extra, non-Auger high-current-density recombination mechanisms and/or Auger-induced leakage. In the case of the present LED structures, the application of three-dimensional numerical-simulation-based analysis to the EL data leads to an explanation of efficiency droop in terms of TD-related and Auger-like nonradiative losses, with a C coefficient in the 10−30 cm6/s range at room temperature, close to the larger theoretical calculations reported so far. However, a study of the combined effects of structural and model uncertainties suggests that the C values thus determined could be overestimated by about an order of magnitude. This preliminary attempt at uncertainty quantification confirms, beyond the present case, the need for an improved description of carrier transport and microscopic radiative and nonradiative recombination mechanisms in device-level LED numerical models

Development of high-speed directly-modulated DFB and DBR lasers with surface gratings

The conventional distributed feedback and distributed Bragg reflector edge-emitting lasers employ buried gratings, which require two or more epitaxial growth steps. By using lateral corrugations of the ridge-waveguide as surface gratings the epitaxial overgrowth is avoided, reducing the fabrication complexity, increasing the yield and reducing the fabrication cost. The surface gratings are applicable to different materials, including Al-containing ones and can be easily integrated in complex device structures and photonic circuits. Single-contact and multiple contact edge-emitting lasers with laterally-corrugated ridge waveguide gratings have been developed both on GaAs and InP substrates with the aim to exploit the photon-photon resonance in order to extend their direct modulation bandwidth. The paper reports on the characteristics of such surface-grating-based lasers emitting both at 1.3 and 1.55 μm and presents the photon-photon resonance extended small-signal modulation bandwidth (> 20 GHz) achieved with a 1.6 mm long single-contact device under direct modulation. Similarly structured devices, with shorter cavity lengths are expected to exceed 40 GHz smallsignal modulation bandwidth under direct modulatio

Clinical Features, Cardiovascular Risk Profile, and Therapeutic Trajectories of Patients with Type 2 Diabetes Candidate for Oral Semaglutide Therapy in the Italian Specialist Care

Introduction: This study aimed to address therapeutic inertia in the management of type 2 diabetes (T2D) by investigating the potential of early treatment with oral semaglutide. Methods: A cross-sectional survey was conducted between October 2021 and April 2022 among specialists treating individuals with T2D. A scientific committee designed a data collection form covering demographics, cardiovascular risk, glucose control metrics, ongoing therapies, and physician judgments on treatment appropriateness. Participants completed anonymous patient questionnaires reflecting routine clinical encounters. The preferred therapeutic regimen for each patient was also identified. Results: The analysis was conducted on 4449 patients initiating oral semaglutide. The population had a relatively short disease duration (42%  60% of patients, and more often than sitagliptin or empagliflozin. Conclusion: The study supports the potential of early implementation of oral semaglutide as a strategy to overcome therapeutic inertia and enhance T2D management

Compact integrated interferometer with semiconductor optical amplifiers

The semiconductor optical amplifiers (SOA) are becoming key elements of modern communication systems, particularly in view of optical signal processing. The carrier dynamics in the gain medium can be exploited to implement all-optical wavelength conversion, demultiplexing, clock recovery and signal regeneration. It can be integrated with waveguides to form compact and polarization-insensitive functional devices. A very compact Michelson interferometer, obtained by monolithic integration of two SOA with a passive waveguide section, incorporating turning mirrors is presented. Basing on the cross-phase modulation effect, taking place in the SOA under optical pumping, a device developed and used to obtain wavelength conversion

Investigation of broadband modulation in CCIG lasers [2210]

Oral presentation nr. 2210, given on 29 Sept. 2009. Abstracts availableon CD only, without volume number and page numbers informations

Numerical Analysis of short-cavity DFB laser for 40 Gb/s transmission

We investigated the spectral behavior and modulation performance of a short-cavity, three-section DFB laser recently proposed by Fujitsu. We show the fundamental role of the small refractive index difference among the sections due to current injection in obtaining high single-mode yield in the fabrication proces