Tunable Fully Absorbing Metasurfaces for Efficient THz Detection

Terahertz photoconductive antennas with a nanostructured active region have been actively investigated recently with a goal to achieve high efficiency THz detectors and emitters. Here we provide a novel design of perfectly-absorbing photoconductive region without plasmonic elements using a metasurface, and provide a systematic method by which the metasurface can be designed to work optimally for varying optical gate frequencies across the GaAs band-gap. This paves the way to using metasurface devices for THz detection and other applications in a wide range of laser systems operating at different wavelengths or with different photoconductive materials

Perfect absorption in GaAs metasurfaces near the bandgap edge

Perfect optical absorption occurs in a metasurface that supports two degenerate and critically-coupled modes of opposite symmetry. The challenge in designing a perfectly absorbing metasurface for a desired wavelength and material stems from the fact that satisfying these conditions requires multi-dimensional optimization often with parameters affecting optical resonances in non-trivial ways. This problem comes to the fore in semiconductor metasurfaces operating near the bandgap wavelength, where intrinsic material absorption varies significantly. Here we devise and demonstrate a systematic process by which one can achieve perfect absorption in GaAs metasurfaces for a desired wavelength at different levels of intrinsic material absorption, eliminating the need for trial and error in the design process. Using this method, we show that perfect absorption can be achieved not only at wavelengths where GaAs exhibits high absorption, but also at wavelengths near the bandgap edge. In this region, absorption is enhanced by over one order of magnitude compared a layer of unstructured GaAs of the same thickness

Perfectly-absorbing photoconductive metasurfaces for THz applications

Ultrafast switching of photoconductivity is essential for many terahertz (THz) technologies, however this process is inefficient. Recently developed concepts of all-dielectric metasurfaces can improve efficiency of ultrafast switches, overcoming material limitations, reducing the thickness of the photoconductive region and lowering optical power requirements for THz devices. We will consider two types of perfectly absorbing metasurfaces compatible with the photoconductive switch architecture and discuss performance of THz detectors with integrated metasurfaces. We will show that optical power level required for optimum operation for these THz detectors is more than one order of magnitude lower in comparison to devices without metasurfaces