Coulomb-enhanced resonance transmission of quantum SINIS junctions

Coherent charge transfer through a ballistic gated SINIS junction is mediated by the resonant tunneling via the Andreev states. Extra charge accommodated on the Andreev levels partially compensates the charge induced by the gate voltage preserving the electron wavelength and maintaining the resonance conditions in a broad range of gate voltages. As a result, the transparency of the junction as well as the supercurrent trough it can be substantially increased as compared to the zero-Coulomb case

Coulomb Promotion of Spin-Dependent Tunnelling

We study transport of spin-polarized electrons through a magnetic single-electron transistor (SET) in the presence of an external magnetic field. Assuming the SET to have a nanometer size central island with a single electron level we find that the interplay on the island between coherent spin-flip dynamics and Coulomb interactions can make the Coulomb correlations promote rather than suppress the current through the device. We find the criteria for this new phenomenon -- Coulomb promotion of spin-dependent tunnelling -- to occur.Comment: 4 pages, 3 figures; The new version has a slightly modified title, 2 more figures, and an extended analysis of the (same) results obtaine

Orbital ac spin-Hall effect in the hopping regime

The Rashba and Dresselhaus spin-orbit interactions are both shown to yield the low temperature spin-Hall effect for strongly localized electrons coupled to phonons. A frequency-dependent electric field ${\bf E}(\omega)$ generates a spin-polarization current, normal to ${\bf E}$, due to interference of hopping paths. At zero temperature the corresponding spin-Hall conductivity is real and is proportional to $\omega^{2}$. At non-zero temperatures the coupling to the phonons yields an imaginary term proportional to $\omega$. The interference also yields persistent spin currents at thermal equilibrium, at ${\bf E}=0$. The contributions from the Dresselhaus and Rashba interactions to the interference oppose each other.Comment: 4 pages, no figure

Memory effects in transport through a hopping insulator: Understanding two-dip experiments

We discuss memory effects in the conductance of hopping insulators due to slow rearrangements of many-electron clusters leading to formation of polarons close to the electron hopping sites. An abrupt change in the gate voltage and corresponding shift of the chemical potential change populations of the hopping sites, which then slowly relax due to rearrangements of the clusters. As a result, the density of hopping states becomes time dependent on a scale relevant to rearrangement of the structural defects leading to the excess time dependent conductivity