Enhancing Learning Through Understanding Your Medical Learner.

Objectives: 1. Identify Barriers to Learning. 2. Differentiate Between Fixed and Growth Mindsets. 3. Evaluate Learner Profiles to Address How Differences in Demographic and Cognitive Factors Affect Developmental Learning

Evolucijski algoritam temeljen na off-line planeru putanje za navigaciju bespilotnih letjelica

An off-line path planner for Unmanned Air Vehicles is presented. The planner is based on Evolutionary Algorithms, in order to calculate a curved pathline with desired characteristics in a three-dimensional environment. The pathline is represented using B-Spline curves, with the coordinates of its control points being the genes of the Evolutionary Algorithm artificial chromosome. The method was tested in an artificial three-dimensional terrain, for different starting and ending points, providing very smooth pathlines under difficult constraints.Predstavljen je off-line planer putanje za bespilotne letjelice. Planer je temeljen na evolucijskim algoritmima za proračun zakrivljene putanje sa željenim karakteristikama u 3D prostoru. Putanja je predstavljena pomoću B-spline krivulja, gdje su koordinate kontrolnih točaka geni umjetnih kromosoma evolucijskih algoritama. Metoda je provjerena na umjetnom 3D prostoru s različitim početnim i konačnim točkama, gdje su dobivene vrlo glatke putanje uz zadovoljenje strogih ograničenja

Theory and design of quantum cascade lasers in (111) n-type Si/SiGe

Although most work towards the realization of group IV quantum cascade lasers (QCLs) has focused on valence band transitions, there are many desirable properties associated with the conduction band. We show that the commonly cited shortcomings of n-type Si/SiGe heterostructures can be overcome by moving to the (111) growth direction. Specifically, a large band offset and low effective mass are achievable and subband degeneracy is preserved. We predict net gain up to lattice temperatures of 90 K in a bound-to-continuum QCL with a double-metal waveguide, and show that a Ge interdiffusion length of at least 8 Å across interfaces is tolerable

A scattering rate approach to the understanding of absorption line broadening in near-infrared AlGaN/GaN quantum wells

There has been much interest in the advancement of III-Nitride growth technology to fabricate AlGaN/GaN heterostructures for intersubband transitions (ISBTs). The large conduction band offset in these structures (up to 2 eV) allows transition energies in the near- to the far-infrared region, which have applications from telecommunications, such as in all-optical switches, to infra-red detectors for sensing and imaging. To date, ISBT electroluminescence has been elusive and absorption measurements remain an important method to verify band structure calculations. The growth quality can be inferred from the absorption spectrum, which will have line broadening with contributions that are both inhomogeneous (large-scale interface roughness, and non-parabolicity) and homogeneous (electron scattering related lifetime broadening). In the present work we calculated the contributions of various homogeneous broadening mechanisms (electron interaction with longitudinal-optical (LO) phonons, acoustic phonons, impurities and alloy disorder) to the full linewidth, and also the contribution of band non-parabolicity, which contributes to the inhomogeneous broadening. Calculations are then compared to the measured absorption spectra of several samples