Electron-Electron Relaxation Effect on Auger Recombination in Direct Band Semiconductors

Influence of electron-electron relaxation processes on Auger recombination rate in direct band semiconductors is investigated. Comparison between carrier-carrier and carrier-phonon relaxation processes is provided. It is shown that relaxation processes are essential if the free path length of carriers doesn't exceed a certain critical value, which exponentially increases with temperature. For illustration of obtained results a typical InGaAsP compound is used

Optical Detection of a Single Nuclear Spin

We propose a method to optically detect the spin state of a 31-P nucleus embedded in a 28-Si matrix. The nuclear-electron hyperfine splitting of the 31-P neutral-donor ground state can be resolved via a direct frequency discrimination measurement of the 31-P bound exciton photoluminescence using single photon detectors. The measurement time is expected to be shorter than the lifetime of the nuclear spin at 4 K and 10 T.Comment: 4 pages, 3 figure

Localization corrections to the anomalous Hall effect in a ferromagnet

We calculate the localization corrections to the anomalous Hall conductivity related to the contribution of spin-orbit scattering into the current vertex (side-jump mechanism). We show that in contrast to the ordinary Hall effect, there exists a nonvanishing localization correction to the anomalous Hall resistivity. The correction to the anomalous Hall conductivity vanishes in the case of side-jump mechanism, but is nonzero for the skew scattering. The total correction to the nondiagonal conductivity related to both mechanisms, does not compensate the correction to the diagonal conductivity.Comment: 7 pages with 7 figure

Tunable local polariton modes in semiconductors

We study the local states within the polariton bandgap that arise due to deep defect centers with strong electron-phonon coupling. Electron transitions involving deep levels may result in alteration of local elastic constants. In this case, substantial reversible transformations of the impurity polariton density of states occur, which include the appearance/disappearance of the polariton impurity band, its shift and/or the modification of its shape. These changes can be induced by thermo- and photo-excitation of the localized electron states or by trapping of injected charge carriers. We develop a simple model, which is applied to the $O_P$ center in $GaP$. Further possible experimental realizations of the effect are discussed.Comment: 7 pages, 3 figure

Storage of electrons in shallow donor excited states of GaP:Te

Tellurium donors in GaP have been ionized by phonon-assisted tunneling in the electric field of pulsed far-infrared laser radiation. In response to the laser pulse a photoconductive signal has been detected with a fast component that follows in time the laser pulse and a slow component that rises after the irradiation has ceased and finally exponentially decays with a strongly temperature-dependent time constant varying from several microseconds to milliseconds. It is shown that this temporal structure of the signal is due to a storage of carriers in the valley-orbit split 1s(E) shallow donor state. Observation of far-infrared to mid-infrared up-conversion demonstrates that the final step of cascade recombination is achieved by radiative transitions