Power corrections to the π0γ\pi^0\gamma transition form factor and pion distribution amplitudes

Employing the standard hard-scattering approach and the running coupling method we calculate a class of power-suppressed corrections $\sim 1/Q^{2n},n=1,2,3,...$ to the electromagnetic $\pi^0\gamma$ transition form factor (FF) $Q^2F_{\pi\gamma}(Q^2)$ arising from the end-point $x \to 0,1$ integration regions. In the investigations we use a hard-scattering amplitude of the subprocess $\gamma+\gamma^{*} \to q +\bar{q}$, symmetrized under exchange $\mu_R^2 \leftrightarrow \bar{\mu}_R^2$ important for exclusive processes containing two external photons. In the computations the pion model distribution amplitudes (DA's) with one and two non-asymptotic terms are employed. The obtained predictions are compared with the CLEO data and constraints on the DA parameters $b_2(\mu_0^2)$ and $b_4(\mu_0^2)$ at the normalization point $\mu_0^2=1 GeV^2$ are extracted. Further restrictions on the pion DA's are deduced from the experimental data on the electromagnetic FF $F_{\pi}(Q^2)$.Comment: 23 pages, 6 figures; the version published in Phys. Rev. D69, 094010 (2004

Quantum dots coordinated with conjugated organic ligands: new nanomaterials with novel photophysics

CdSe quantum dots functionalized with oligo-(phenylene vinylene) (OPV) ligands (CdSe-OPV nanostructures) represent a new class of composite nanomaterials with significantly modified photophysics relative to bulk blends or isolated components. Single-molecule spectroscopy on these species have revealed novel photophysics such as enhanced energy transfer, spectral stability, and strongly modified excited state lifetimes and blinking statistics. Here, we review the role of ligands in quantum dot applications and summarize some of our recent efforts probing energy and charge transfer in hybrid CdSe-OPV composite nanostructures