Feigin-Frenkel center in types B, C and D

For each simple Lie algebra g consider the corresponding affine vertex algebra V_{crit}(g) at the critical level. The center of this vertex algebra is a commutative associative algebra whose structure was described by a remarkable theorem of Feigin and Frenkel about two decades ago. However, only recently simple formulas for the generators of the center were found for the Lie algebras of type A following Talalaev's discovery of explicit higher Gaudin Hamiltonians. We give explicit formulas for generators of the centers of the affine vertex algebras V_{crit}(g) associated with the simple Lie algebras g of types B, C and D. The construction relies on the Schur-Weyl duality involving the Brauer algebra, and the generators are expressed as weighted traces over tensor spaces and, equivalently, as traces over the spaces of singular vectors for the action of the Lie algebra sl_2 in the context of Howe duality. This leads to explicit constructions of commutative subalgebras of the universal enveloping algebras U(g[t]) and U(g), and to higher order Hamiltonians in the Gaudin model associated with each Lie algebra g. We also introduce analogues of the Bethe subalgebras of the Yangians Y(g) and show that their graded images coincide with the respective commutative subalgebras of U(g[t]).Comment: 29 pages, constructions of Pfaffian-type Sugawara operators and commutative subalgebras in universal enveloping algebras are adde

Miniband-related 1.4–1.8 μm luminescence of Ge/Si quantum dot superlattices

The luminescence properties of highly strained, Sb-doped Ge/Si multi-layer heterostructures with incorporated Ge quantum dots (QDs) are studied. Calculations of the electronic band structure and luminescence measurements prove the existence of an electron miniband within the columns of the QDs. Miniband formation results in a conversion of the indirect to a quasi-direct excitons takes place. The optical transitions between electron states within the miniband and hole states within QDs are responsible for an intense luminescence in the 1.4–1.8 µm range, which is maintained up to room temperature. At 300 K, a light emitting diode based on such Ge/Si QD superlattices demonstrates an external quantum efficiency of 0.04% at a wavelength of 1.55 µm