4 research outputs found
Nernst Effect in Electron-Doped PrCeCuO
The Nernst effect of PrCeCuO (x=0.13, 0.15, and 0.17) has
been measured on thin film samples between 5-120 K and 0-14 T. In comparison to
recent measurements on hole-doped cuprates that showed an anomalously large
Nernst effect above the resistive T and H
\cite{xu,wang1,wang2,capan}, we find a normal Nernst effect above T and
H for all dopings. The lack of an anomalous Nernst effect in the
electron-doped compounds supports the models that explain this effect in terms
of amplitude and phase fluctuations in the hole-doped cuprates. In addition,
the H(T) determined from the Nernst effect shows a conventional behavior
for all dopings. The energy gap determined from H(0) decreases as the
system goes from under-doping to over-dopingin agreement with the recent
tunnelling experiments