17 research outputs found
ΠΠ»Π°Π·ΠΌΠ΅Π½Π½ΡΠΉ ΠΈΡΡΠΎΡΠ½ΠΈΠΊ Π·Π°ΡΡΠΆΠ΅Π½Π½ΡΡ ΡΠ°ΡΡΠΈΡ Π΄Π»Ρ ΡΠΎΡΠΌΠΈΡΠΎΠ²Π°Π½ΠΈΡ ΡΠΎΠ²ΠΌΠ΅ΡΠ΅Π½Π½ΡΡ ΠΈΠΎΠ½Π½ΠΎ-ΡΠ»Π΅ΠΊΡΡΠΎΠ½Π½ΡΡ ΠΏΡΡΠΊΠΎΠ²
One of the ways to increase the efficiency of the implementation of ion-plasma technologies of exposure to the surfaces of various materials is partial or full compensation of the positive charge of ions in the stream or on the treated surface, for which additional emitting systems are used that create compensating electron flows in the discharge space, accelerating gap or on the processed surface. It was previously shown that for the implementation of such a compensating effect, it is possible to use plasma sources of charged particles, capable of forming beams of both signs when the polarity of the accelerating voltage is changed. The main problem in this case is the difficulty in achieving simultaneously high emission efficiency of ions and electrons, since the conditions for their emission from plasma are significantly different. This article proposes a concept and a design developed on its basis for a prototype of a multi-discharge plasma electron-ion source for the joint or alternating formation of electron and ion beams. It is shown that the proposed design realizes the possibility ofΒ increasing the perveance by compensating for the space charge by particles of the opposite sign. A number of characteristics of the developed model of a plasma electron-ion source (current-voltage characteristics of the extraction of electrons and ions) are presented and its prospects for further development of an electron-ion source for industrial use on its basis are shown. Combined or alternating ion-electron beams formed in the presented source can be used to implement the technology of applying thin-film layers of metals, semiconductors, and dielectrics to maintain ionization processes and ensure stable discharge burning, compensation of both the space charge in the beam and the surface charge on the formed film.ΠΠ΄Π½ΠΈΠΌ ΠΈΠ· ΡΠΏΠΎΡΠΎΠ±ΠΎΠ² ΠΏΠΎΠ²ΡΡΠ΅Π½ΠΈΡ ΡΡΡΠ΅ΠΊΡΠΈΠ²Π½ΠΎΡΡΠΈ ΡΠ΅Π°Π»ΠΈΠ·Π°ΡΠΈΠΈ ΠΈΠΎΠ½Π½ΠΎ-ΠΏΠ»Π°Π·ΠΌΠ΅Π½Π½ΡΡ
ΡΠ΅Ρ
Π½ΠΎΠ»ΠΎΠ³ΠΈΠΉ Π²ΠΎΠ·Π΄Π΅ΠΉΡΡΠ²ΠΈΡ Π½Π° ΠΏΠΎΠ²Π΅ΡΡ
Π½ΠΎΡΡΠΈ ΡΠ°Π·Π»ΠΈΡΠ½ΡΡ
ΠΌΠ°ΡΠ΅ΡΠΈΠ°Π»ΠΎΠ² ΡΠ²Π»ΡΠ΅ΡΡΡ ΡΠ°ΡΡΠΈΡΠ½Π°Ρ ΠΈΠ»ΠΈ ΠΏΠΎΠ»Π½Π°Ρ ΠΊΠΎΠΌΠΏΠ΅Π½ΡΠ°ΡΠΈΡ ΠΏΠΎΠ»ΠΎΠΆΠΈΡΠ΅Π»ΡΠ½ΠΎΠ³ΠΎ Π·Π°ΡΡΠ΄Π° ΠΈΠΎΠ½ΠΎΠ² Π² ΠΏΠΎΡΠΎΠΊΠ΅ ΠΈΠ»ΠΈ Π½Π° ΠΎΠ±ΡΠ°Π±Π°ΡΡΠ²Π°Π΅ΠΌΠΎΠΉ ΠΏΠΎΠ²Π΅ΡΡ
Π½ΠΎΡΡΠΈ, Π΄Π»Ρ ΡΠ΅Π³ΠΎ ΠΈΡΠΏΠΎΠ»ΡΠ·ΡΡΡΡΡ Π΄ΠΎΠΏΠΎΠ»Π½ΠΈΡΠ΅Π»ΡΠ½ΡΠ΅ ΡΠΌΠΈΡΠΈΡΡΡΡΠΈΠ΅ ΡΠΈΡΡΠ΅ΠΌΡ, ΠΊΠΎΡΠΎΡΡΠ΅ ΡΠΎΠ·Π΄Π°ΡΡ ΠΊΠΎΠΌΠΏΠ΅Π½ΡΠΈΡΡΡΡΠΈΠ΅ ΡΠ»Π΅ΠΊΡΡΠΎΠ½Π½ΡΠ΅ ΠΏΠΎΡΠΎΠΊΠΈ Π² ΡΠ°Π·ΡΡΠ΄Π½ΠΎΠ΅ ΠΏΡΠΎΡΡΡΠ°Π½ΡΡΠ²ΠΎ, ΡΡΠΊΠΎΡΡΡΡΠΈΠΉ ΠΏΡΠΎΠΌΠ΅ΠΆΡΡΠΎΠΊ ΠΈΠ»ΠΈ Π½Π° ΠΎΠ±ΡΠ°Π±Π°ΡΡΠ²Π°Π΅ΠΌΡΡ ΠΏΠΎΠ²Π΅ΡΡ
Π½ΠΎΡΡΡ. ΠΠ»Ρ ΡΠ΅Π°Π»ΠΈΠ·Π°ΡΠΈΠΈ ΡΠ°ΠΊΠΎΠ³ΠΎ ΠΊΠΎΠΌΠΏΠ΅Π½ΡΠΈΡΡΡΡΠ΅Π³ΠΎ Π²ΠΎΠ·Π΄Π΅ΠΉΡΡΠ²ΠΈΡ Π²ΠΎΠ·ΠΌΠΎΠΆΠ½ΠΎ ΠΏΡΠΈΠΌΠ΅Π½Π΅Π½ΠΈΠ΅ ΠΏΠ»Π°Π·ΠΌΠ΅Π½Π½ΡΡ
ΠΈΡΡΠΎΡΠ½ΠΈΠΊΠΎΠ² Π·Π°ΡΡΠΆΠ΅Π½Π½ΡΡ
ΡΠ°ΡΡΠΈΡ, ΡΠΏΠΎΡΠΎΠ±Π½ΡΡ
ΠΏΡΠΈ ΠΈΠ·ΠΌΠ΅Π½Π΅Π½ΠΈΠΈ ΠΏΠΎΠ»ΡΡΠ½ΠΎΡΡΠΈ ΡΡΠΊΠΎΡΡΡΡΠ΅Π³ΠΎ Π½Π°ΠΏΡΡΠΆΠ΅Π½ΠΈΡ ΡΠΎΡΠΌΠΈΡΠΎΠ²Π°ΡΡ ΠΏΡΡΠΊΠΈ ΠΎΠ±ΠΎΠΈΡ
Π·Π½Π°ΠΊΠΎΠ². ΠΡΠ½ΠΎΠ²Π½Π°Ρ ΠΏΡΠΎΠ±Π»Π΅ΠΌΠ° ΠΏΡΠΈ ΡΡΠΎΠΌ Π·Π°ΠΊΠ»ΡΡΠ°Π΅ΡΡΡ Π² ΡΠ»ΠΎΠΆΠ½ΠΎΡΡΠΈ Π΄ΠΎΡΡΠΈΠΆΠ΅Π½ΠΈΡ ΠΎΠ΄Π½ΠΎΠ²ΡΠ΅ΠΌΠ΅Π½Π½ΠΎ Π²ΡΡΠΎΠΊΠΎΠΉ ΡΡΡΠ΅ΠΊΡΠΈΠ²Π½ΠΎΡΡΠΈ ΡΠΌΠΈΡΡΠΈΠΈ ΠΈΠΎΠ½ΠΎΠ² ΠΈ ΡΠ»Π΅ΠΊΡΡΠΎΠ½ΠΎΠ², ΠΏΠΎΡΠΊΠΎΠ»ΡΠΊΡ ΡΡΠ»ΠΎΠ²ΠΈΡ ΠΈΡ
ΡΠΌΠΈΡΡΠΈΠΈ ΠΈΠ· ΠΏΠ»Π°Π·ΠΌΡ ΡΡΡΠ΅ΡΡΠ²Π΅Π½Π½ΠΎ ΡΠ°Π·Π»ΠΈΡΠ°ΡΡΡΡ. Π Π΄Π°Π½Π½ΠΎΠΉ ΡΡΠ°ΡΡΠ΅ ΠΏΡΠ΅Π΄Π»ΠΎΠΆΠ΅Π½Π° ΠΊΠΎΠ½ΡΠ΅ΠΏΡΠΈΡ ΠΈ ΡΠ°Π·ΡΠ°Π±ΠΎΡΠ°Π½Π½Π°Ρ Π½Π° Π΅Π΅ ΠΎΡΠ½ΠΎΠ²Π΅ ΠΊΠΎΠ½ΡΡΡΡΠΊΡΠΈΡ ΠΌΠ°ΠΊΠ΅ΡΠ° ΠΌΡΠ»ΡΡΠΈΡΠ°Π·ΡΡΠ΄Π½ΠΎΠ³ΠΎ ΠΏΠ»Π°Π·ΠΌΠ΅Π½Π½ΠΎΠ³ΠΎ ΡΠ»Π΅ΠΊΡΡΠΎΠ½Π½ΠΎ-ΠΈΠΎΠ½Π½ΠΎΠ³ΠΎ ΠΈΡΡΠΎΡΠ½ΠΈΠΊΠ° Π΄Π»Ρ ΡΠΎΠ²ΠΌΠ΅ΡΡΠ½ΠΎΠ³ΠΎ ΠΈΠ»ΠΈ ΠΏΠΎΠΏΠ΅ΡΠ΅ΠΌΠ΅Π½Π½ΠΎΠ³ΠΎ ΡΠΎΡΠΌΠΈΡΠΎΠ²Π°Π½ΠΈΡ ΡΠ»Π΅ΠΊΡΡΠΎΠ½Π½ΡΡ
ΠΈ ΠΈΠΎΠ½Π½ΡΡ
ΠΏΡΡΠΊΠΎΠ². ΠΠΎΠΊΠ°Π·Π°Π½ΠΎ, ΡΡΠΎ Π² ΠΏΡΠ΅Π΄Π»ΠΎΠΆΠ΅Π½Π½ΠΎΠΉ ΠΊΠΎΠ½ΡΡΡΡΠΊΡΠΈΠΈ ΡΠ΅Π°Π»ΠΈΠ·ΡΠ΅ΡΡΡ Π²ΠΎΠ·ΠΌΠΎΠΆΠ½ΠΎΡΡΡ ΠΏΠΎΠ²ΡΡΠ΅Π½ΠΈΡ ΠΏΠ΅ΡΠ²Π΅Π°Π½ΡΠ° Π·Π° ΡΡΠ΅Ρ ΠΊΠΎΠΌΠΏΠ΅Π½ΡΠ°ΡΠΈΠΈ ΠΎΠ±ΡΠ΅ΠΌΠ½ΠΎΠ³ΠΎ Π·Π°ΡΡΠ΄Π° ΡΠ°ΡΡΠΈΡΠ°ΠΌΠΈ ΠΏΡΠΎΡΠΈΠ²ΠΎΠΏΠΎΠ»ΠΎΠΆΠ½ΠΎΠ³ΠΎ Π·Π½Π°ΠΊΠ°. ΠΡΠΈΠ²Π΅Π΄Π΅Π½ ΡΡΠ΄ Ρ
Π°ΡΠ°ΠΊΡΠ΅ΡΠΈΡΡΠΈΠΊ ΡΠ°Π·ΡΠ°Π±ΠΎΡΠ°Π½Π½ΠΎΠ³ΠΎ ΠΌΠ°ΠΊΠ΅ΡΠ° ΠΏΠ»Π°Π·ΠΌΠ΅Π½Π½ΠΎΠ³ΠΎ ΡΠ»Π΅ΠΊΡΡΠΎΠ½Π½ΠΎ-ΠΈΠΎΠ½Π½ΠΎΠ³ΠΎ ΠΈΡΡΠΎΡΠ½ΠΈΠΊΠ° (Π²ΠΎΠ»ΡΡΠ°ΠΌΠΏΠ΅ΡΠ½ΡΠ΅ Ρ
Π°ΡΠ°ΠΊΡΠ΅ΡΠΈΡΡΠΈΠΊΠΈ ΠΈΠ·Π²Π»Π΅ΡΠ΅Π½ΠΈΡ ΡΠ»Π΅ΠΊΡΡΠΎΠ½ΠΎΠ² ΠΈ ΠΈΠΎΠ½ΠΎΠ²) ΠΈ ΠΏΠΎΠΊΠ°Π·Π°Π½Π° Π΅Π³ΠΎ ΠΏΠ΅ΡΡΠΏΠ΅ΠΊΡΠΈΠ²Π½ΠΎΡΡΡ Π΄Π»Ρ Π΄Π°Π»ΡΠ½Π΅ΠΉΡΠ΅ΠΉ ΡΠ°Π·ΡΠ°Π±ΠΎΡΠΊΠΈ Π½Π° Π΅Π³ΠΎ ΠΎΡΠ½ΠΎΠ²Π΅ ΡΠ»Π΅ΠΊΡΡΠΎΠ½Π½ΠΎ-ΠΈΠΎΠ½Π½ΠΎΠ³ΠΎ ΠΈΡΡΠΎΡΠ½ΠΈΠΊΠ° Π΄Π»Ρ ΠΏΡΠΎΠΌΡΡΠ»Π΅Π½Π½ΠΎΠ³ΠΎ ΠΏΡΠΈΠΌΠ΅Π½Π΅Π½ΠΈΡ. Π‘ΠΎΠ²ΠΌΠ΅ΡΠ΅Π½Π½ΡΠ΅ ΠΈΠ»ΠΈ ΠΏΠΎΠΏΠ΅ΡΠ΅ΠΌΠ΅Π½Π½ΡΠ΅ ΠΈΠΎΠ½Π½ΠΎ-ΡΠ»Π΅ΠΊΡΡΠΎΠ½Π½ΡΠ΅ ΠΏΡΡΠΊΠΈ, ΡΠΎΡΠΌΠΈΡΡΠ΅ΠΌΡΠ΅ Π² ΠΏΡΠ΅Π΄ΡΡΠ°Π²Π»Π΅Π½Π½ΠΎΠΌ ΠΈΡΡΠΎΡΠ½ΠΈΠΊΠ΅, ΠΌΠΎΠ³ΡΡ Π±ΡΡΡ ΠΈΡΠΏΠΎΠ»ΡΠ·ΠΎΠ²Π°Π½Ρ ΠΏΡΠΈ ΡΠ΅Π°Π»ΠΈΠ·Π°ΡΠΈΠΈ ΡΠ΅Ρ
Π½ΠΎΠ»ΠΎΠ³ΠΈΠΉ Π½Π°Π½Π΅ΡΠ΅Π½ΠΈΡ ΡΠΎΠ½ΠΊΠΎΠΏΠ»Π΅Π½ΠΎΡΠ½ΡΡ
ΡΠ»ΠΎΠ΅Π² ΠΌΠ΅ΡΠ°Π»Π»ΠΎΠ², ΠΏΠΎΠ»ΡΠΏΡΠΎΠ²ΠΎΠ΄Π½ΠΈΠΊΠΎΠ² ΠΈ Π΄ΠΈΡΠ»Π΅ΠΊΡΡΠΈΠΊΠΎΠ² Π΄Π»Ρ ΠΏΠΎΠ΄Π΄Π΅ΡΠΆΠ°Π½ΠΈΡ ΠΏΡΠΎΡΠ΅ΡΡΠΎΠ² ΠΈΠΎΠ½ΠΈΠ·Π°ΡΠΈΠΈ ΠΈ ΠΎΠ±Π΅ΡΠΏΠ΅ΡΠ΅Π½ΠΈΡ ΡΡΡΠΎΠΉΡΠΈΠ²ΠΎΠ³ΠΎ Π³ΠΎΡΠ΅Π½ΠΈΡ ΡΠ°Π·ΡΡΠ΄Π°, ΠΊΠΎΠΌΠΏΠ΅Π½ΡΠ°ΡΠΈΠΈ ΠΊΠ°ΠΊ ΠΎΠ±ΡΠ΅ΠΌΠ½ΠΎΠ³ΠΎ Π·Π°ΡΡΠ΄Π° Π² ΠΏΡΡΠΊΠ΅, ΡΠ°ΠΊ ΠΈ ΠΏΠΎΠ²Π΅ΡΡ
Π½ΠΎΡΡΠ½ΠΎΠ³ΠΎ Π½Π° ΡΠΎΡΠΌΠΈΡΡΠ΅ΠΌΠΎΠΉ ΠΏΠ»Π΅Π½ΠΊΠ΅
Magnetoelectric ordering of BiFeO3 from the perspective of crystal chemistry
In this paper we examine the role of crystal chemistry factors in creating
conditions for formation of magnetoelectric ordering in BiFeO3. It is generally
accepted that the main reason of the ferroelectric distortion in BiFeO3 is
concerned with a stereochemical activity of the Bi lone pair. However, the lone
pair is stereochemically active in the paraelectric orthorhombic beta-phase as
well. We demonstrate that a crucial role in emerging of phase transitions of
the metal-insulator, paraelectric-ferroelectric and magnetic disorder-order
types belongs to the change of the degree of the lone pair stereochemical
activity - its consecutive increase with the temperature decrease. Using the
structural data, we calculated the sign and strength of magnetic couplings in
BiFeO3 in the range from 945 C down to 25 C and found the couplings, which
undergo the antiferromagnetic-ferromagnetic transition with the temperature
decrease and give rise to the antiferromagnetic ordering and its delay in
regard to temperature, as compared to the ferroelectric ordering. We discuss
the reasons of emerging of the spatially modulated spin structure and its
suppression by doping with La3+.Comment: 18 pages, 5 figures, 3 table
Gas discharge plasma disturbance by electron extractio
Gruzdev, V. A. Gas discharge plasma disturbance by electron extraction / V. A. Gruzdev, V. G. Zalesski, D. A. Antonovich // Plasma Physics and Plasma Technology : Ρroc. V Intern. Conf. on, Minsk, 18-22 Sept. 2006. / Institute of Molecular and Atomic Physics National Academy of Sciences of Belarus. β Minsk, 2006. β Vol. I. β P. 154β157
Emission current formation in Plasma electron emitters
A model of the plasma electron emitter is considered, in which the current redistribution over electrodes of the emitter gas-discharge structure and weak electric field formation in plasma are taken into account as functions of the emission current. The calculated and experimental dependences of the switching parameters, extraction efficiency, and strength of the electric field in plasma on the accelerating voltage and geometrical sizes of the emission channel are presented
Automated management by an electron-beam gun with the plasma emitter realised on the basis of the personal computer
Π Π°ΡΡΠΌΠ°ΡΡΠΈΠ²Π°Π΅ΡΡΡ Π²Π°ΡΠΈΠ°Π½Ρ ΡΠ΅Π°Π»ΠΈΠ·Π°ΡΠΈΠΈ ΡΠΈΡΡΠ΅ΠΌΡ Π°Π²ΡΠΎΠΌΠ°ΡΠΈΠ·ΠΈΡΠΎΠ²Π°Π½Π½ΠΎΠ³ΠΎ ΡΠΏΡΠ°Π²Π»Π΅Π½ΠΈΡ
ΡΠ»Π΅ΠΊΡΡΠΎΠ½Π½ΠΎ-Π»ΡΡΠ΅Π²ΡΠΌ ΡΠ½Π΅ΡΠ³ΠΎΠΊΠΎΠΌΠΏΠ»Π΅ΠΊΡΠΎΠΌ Π½Π° Π±Π°Π·Π΅ ΡΠ»Π΅ΠΊΡΡΠΎΠ½Π½ΠΎ-Π»ΡΡΠ΅Π²ΠΎΠΉ ΠΏΡΡΠΊΠΈ Ρ ΠΏΠ»Π°Π·ΠΌΠ΅Π½Π½ΡΠΌ
ΡΠΌΠΈΡΡΠ΅ΡΠΎΠΌ. Π Π΅Π°Π»ΠΈΠ·ΠΎΠ²Π°Π½Π½Π°Ρ ΡΠΈΡΡΠ΅ΠΌΠ° Π°Π²ΡΠΎΠΌΠ°ΡΠΈΠ·ΠΈΡΠΎΠ²Π°Π½Π½ΠΎΠ³ΠΎ ΡΠΏΡΠ°Π²Π»Π΅Π½ΠΈΡ ΡΠ»Π΅ΠΊΡΡΠΎΠ½Π½ΠΎ-Π»ΡΡΠ΅Π²ΠΎΠΉ
ΠΏΡΡΠΊΠΎΠΉ Ρ ΠΏΠ»Π°Π·ΠΌΠ΅Π½Π½ΡΠΌ ΡΠΌΠΈΡΡΠ΅ΡΠΎΠΌ Π½Π° Π±Π°Π·Π΅ ΠΏΠ΅ΡΡΠΎΠ½Π°Π»ΡΠ½ΠΎΠ³ΠΎ ΠΊΠΎΠΌΠΏΡΡΡΠ΅ΡΠ° Ρ ΠΈΡΠΏΠΎΠ»ΡΠ·ΠΎΠ²Π°Π½ΠΈΠ΅ΠΌ
ΡΠΎΠ±ΡΡΠ²Π΅Π½Π½ΠΎΠΉ ΠΊΠΎΠΌΠΏΠΎΠ½Π΅Π½ΡΡ Π²ΠΈΠ·ΡΠ°Π»ΠΈΠ·Π°ΡΠΈΠΈ ΠΏΠΎΠΊΠ°Π·Π°Π½ΠΈΠΉ Π΄Π°ΡΡΠΈΠΊΠΎΠ² ΠΏΡΠ΅Π΄ΡΡΠΌΠ°ΡΡΠΈΠ²Π°Π΅Ρ ΡΠ²ΡΠ·Ρ ΠΌΠ΅ΠΆΠ΄Ρ
ΠΎΡΠ½ΠΎΠ²Π½ΡΠΌΠΈ ΡΠ»Π΅ΠΌΠ΅Π½ΡΠ°ΠΌΠΈ ΡΠ»Π΅ΠΊΡΡΠΎΠ½Π½ΠΎ-Π»ΡΡΠ΅Π²ΠΎΠΉ ΡΡΡΠ°Π½ΠΎΠ²ΠΊΠΈ. Π£ΠΏΡΠ°Π²Π»Π΅Π½ΠΈΠ΅ ΡΠΈΠΊΠ»ΠΎΠΌ ΡΠ»Π΅ΠΊΡΡΠΎΠ½Π½ΠΎ-
Π»ΡΡΠ΅Π²ΠΎΠΉ ΡΠ²Π°ΡΠΊΠΈ ΠΎΡΡΡΠ΅ΡΡΠ²Π»ΡΠ΅ΡΡΡ Ρ ΡΡΠ΅ΡΠΎΠΌ ΡΠ°ΡΡΠΌΠΎΡΡΠ΅Π½Π½ΡΡ
ΠΎΡΠ½ΠΎΠ²Π½ΡΡ
ΠΎΡΠΎΠ±Π΅Π½Π½ΠΎΡΡΠ΅ΠΉ
ΠΏΠΎΡΡΡΠΎΠ΅Π½ΠΈΡ ΡΠΈΡΡΠ΅ΠΌ Π°Π²ΡΠΎΠΌΠ°ΡΠΈΠ·ΠΈΡΠΎΠ²Π°Π½Π½ΠΎΠ³ΠΎ ΡΠΏΡΠ°Π²Π»Π΅Π½ΠΈΡ ΡΠ»Π΅ΠΊΡΡΠΎΠ½Π½ΠΎ-Π»ΡΡΠ΅Π²ΡΠΌΠΈ
ΡΠ½Π΅ΡΠ³ΠΎΠΊΠΎΠΌΠΏΠ»Π΅ΠΊΡΠ°ΠΌΠΈ Π½Π° Π±Π°Π·Π΅ ΡΠ»Π΅ΠΊΡΡΠΎΠ½Π½ΠΎ-Π»ΡΡΠ΅Π²ΡΡ
ΠΏΡΡΠ΅ΠΊ Ρ ΠΏΠ»Π°Π·ΠΌΠ΅Π½Π½ΡΠΌ ΡΠΌΠΈΡΡΠ΅ΡΠΎΠΌ.The variant of realization of system of automated management by an electron beam energy-
complex on the basis of an electron beam gun with the plasma emitter is considered. The realized
system of automated management by an electron beam gun with the plasma emitter on the basis of the
personal computer with usage of the own component of visualization of indications of sensors
provides communication between basic elements of electron beam installation. Management by a
cycle of electron beam welding is carried out taking into account the considered basic features of
construction of systems of automated management by an electron beam energy-complexes on the basis
of electron beam guns with the plasma emitter
Way and device for diagnostics of electron-optical systems of plasma electron sources
ΠΡΠ΅Π΄ΡΡΠ°Π²Π»Π΅Π½ΠΎ ΡΡΡΡΠΎΠΉΡΡΠ²ΠΎ, ΠΏΠΎΠ·Π²ΠΎΠ»ΡΡΡΠ΅Π΅ ΠΎΠΏΡΠ΅Π΄Π΅Π»ΡΡΡ ΡΠΌΠΈΡΡΠ°Π½Ρ ΠΈ ΡΠ°ΡΠΏΡΠ΅Π΄Π΅Π»Π΅Π½ΠΈΠ΅ ΠΏΠ»ΠΎΡΠ½ΠΎΡΡΠΈ
ΡΠΎΠΊΠ° ΠΏΠΎ ΡΠ΅ΡΠ΅Π½ΠΈΡ ΡΠ»Π΅ΠΊΡΡΠΎΠ½Π½ΠΎΠ³ΠΎ ΠΏΡΡΠΊΠ°, Π° ΡΠ°ΠΊΠΆΠ΅ Π½Π° ΠΈΡ
ΠΎΡΠ½ΠΎΠ²Π΅ ΡΡΠ΄ Π΄ΠΎΠΏΠΎΠ»Π½ΠΈΡΠ΅Π»ΡΠ½ΡΡ
Ρ
Π°ΡΠ°ΠΊΡΠ΅ΡΠΈΡΡΠΈΠΊ: Π΄ΠΈΠ°ΠΌΠ΅ΡΡ ΠΏΡΡΠΊΠ°, Π΅Π³ΠΎ ΡΡΠΊΠΎΡΡΡ, ΡΠ°ΡΡ
ΠΎΠ΄ΠΈΠΌΠΎΡΡΡ, Ρ
Π°ΠΎΡΠΈΡΠ΅ΡΠΊΡΡ ΡΠΊΠΎΡΠΎΡΡΡ ΡΠ»Π΅ΠΊΡΡΠΎΠ½ΠΎΠ² Π² ΠΏΡΡΠΊΠ΅.
ΠΡΠ΅Π΄Π»ΠΎΠΆΠ΅Π½ ΡΠΏΠΎΡΠΎΠ± Π΄ΠΈΠ°Π³Π½ΠΎΡΡΠΈΠΊΠΈ ΡΠ»Π΅ΠΊΡΡΠΎΠ½Π½ΠΎ-ΠΎΠΏΡΠΈΡΠ΅ΡΠΊΠΈΡ
ΡΠΈΡΡΠ΅ΠΌ ΠΏΠ»Π°Π·ΠΌΠ΅Π½Π½ΡΡ
ΠΈΡΡΠΎΡΠ½ΠΈΠΊΠΎΠ²
ΡΠ»Π΅ΠΊΡΡΠΎΠ½ΠΎΠ², ΠΎΡΠ½ΠΎΠ²Π°Π½Π½ΡΠΉ Π½Π° ΡΡΠ°Π²Π½Π΅Π½ΠΈΠΈ ΡΠ°Π·ΠΎΠ²ΡΡ
ΠΎΠ±ΡΠ΅ΠΌΠΎΠ² ΡΠΎΡΠΌΠΈΡΡΠ΅ΠΌΡΡ
ΠΏΡΡΠΊΠΎΠ² ΠΈ ΠΏΠΎΠ·Π²ΠΎΠ»ΡΡΡΠΈΠΉ Π·Π½Π°ΡΠΈΡΠ΅Π»ΡΠ½ΠΎ ΡΠΎΠΊΡΠ°ΡΠΈΡΡ ΠΎΠ±ΡΠ΅ΠΌ ΡΠΊΡΠΏΠ΅ΡΠΈΠΌΠ΅Π½ΡΠ°Π»ΡΠ½ΠΎΠΉ ΡΠ°Π±ΠΎΡΡ ΠΏΠΎ ΠΎΠΏΡΠΈΠΌΠΈΠ·Π°ΡΠΈΠΈ Π³Π΅ΠΎΠΌΠ΅ΡΡΠΈΠΈ
ΡΠ°ΠΊΠΈΡ
ΡΠΈΡΡΠ΅ΠΌ, Π° ΡΠ°ΠΊΠΆΠ΅ ΡΠΈΡΡΠ΅ΠΌ ΡΠΎΠΊΡΡΠΈΡΠΎΠ²ΠΊΠΈ ΠΈ ΠΎΡΠΊΠ»ΠΎΠ½Π΅Π½ΠΈΡ.The device, allowing to determine the emittance and distribution of current density over an
electronic beam section and also on their basis a number of additional characteristics: diameter of a
beam, its brightness, divergence, chaotic speed of electrons in a beam, is presented. The way of diagnostics of electron-optical systems of plasma electron sources is offered, based on comparison of
phase volumes of formed beams and allowing to reduce considerably the volume of experimental
work on optimization of geometry of such systems, and also the systems of focusing and deviation