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    ΠŸΠ»Π°Π·ΠΌΠ΅Π½Π½Ρ‹ΠΉ источник заряТСнных частиц для формирования совмСщСнных ΠΈΠΎΠ½Π½ΠΎ-элСктронных ΠΏΡƒΡ‡ΠΊΠΎΠ²

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    One of the ways to increase the efficiency of the implementation of ion-plasma technologies of exposure to the surfaces of various materials is partial or full compensation of the positive charge of ions in the stream or on the treated surface, for which additional emitting systems are used that create compensating electron flows in the discharge space, accelerating gap or on the processed surface. It was previously shown that for the implementation of such a compensating effect, it is possible to use plasma sources of charged particles, capable of forming beams of both signs when the polarity of the accelerating voltage is changed. The main problem in this case is the difficulty in achieving simultaneously high emission efficiency of ions and electrons, since the conditions for their emission from plasma are significantly different. This article proposes a concept and a design developed on its basis for a prototype of a multi-discharge plasma electron-ion source for the joint or alternating formation of electron and ion beams. It is shown that the proposed design realizes the possibility ofΒ increasing the perveance by compensating for the space charge by particles of the opposite sign. A number of characteristics of the developed model of a plasma electron-ion source (current-voltage characteristics of the extraction of electrons and ions) are presented and its prospects for further development of an electron-ion source for industrial use on its basis are shown. Combined or alternating ion-electron beams formed in the presented source can be used to implement the technology of applying thin-film layers of metals, semiconductors, and dielectrics to maintain ionization processes and ensure stable discharge burning, compensation of both the space charge in the beam and the surface charge on the formed film.Одним ΠΈΠ· способов ΠΏΠΎΠ²Ρ‹ΡˆΠ΅Π½ΠΈΡ эффСктивности Ρ€Π΅Π°Π»ΠΈΠ·Π°Ρ†ΠΈΠΈ ΠΈΠΎΠ½Π½ΠΎ-ΠΏΠ»Π°Π·ΠΌΠ΅Π½Π½Ρ‹Ρ… Ρ‚Π΅Ρ…Π½ΠΎΠ»ΠΎΠ³ΠΈΠΉ воздСйствия Π½Π° повСрхности Ρ€Π°Π·Π»ΠΈΡ‡Π½Ρ‹Ρ… ΠΌΠ°Ρ‚Π΅Ρ€ΠΈΠ°Π»ΠΎΠ² являСтся частичная ΠΈΠ»ΠΈ полная компСнсация ΠΏΠΎΠ»ΠΎΠΆΠΈΡ‚Π΅Π»ΡŒΠ½ΠΎΠ³ΠΎ заряда ΠΈΠΎΠ½ΠΎΠ² Π² ΠΏΠΎΡ‚ΠΎΠΊΠ΅ ΠΈΠ»ΠΈ Π½Π° ΠΎΠ±Ρ€Π°Π±Π°Ρ‚Ρ‹Π²Π°Π΅ΠΌΠΎΠΉ повСрхности, для Ρ‡Π΅Π³ΠΎ ΠΈΡΠΏΠΎΠ»ΡŒΠ·ΡƒΡŽΡ‚ΡΡ Π΄ΠΎΠΏΠΎΠ»Π½ΠΈΡ‚Π΅Π»ΡŒΠ½Ρ‹Π΅ ΡΠΌΠΈΡ‚ΠΈΡ€ΡƒΡŽΡ‰ΠΈΠ΅ систСмы, ΠΊΠΎΡ‚ΠΎΡ€Ρ‹Π΅ ΡΠΎΠ·Π΄Π°ΡŽΡ‚ ΠΊΠΎΠΌΠΏΠ΅Π½ΡΠΈΡ€ΡƒΡŽΡ‰ΠΈΠ΅ элСктронныС ΠΏΠΎΡ‚ΠΎΠΊΠΈ Π² разрядноС пространство, ΡƒΡΠΊΠΎΡ€ΡΡŽΡ‰ΠΈΠΉ ΠΏΡ€ΠΎΠΌΠ΅ΠΆΡƒΡ‚ΠΎΠΊ ΠΈΠ»ΠΈ Π½Π° ΠΎΠ±Ρ€Π°Π±Π°Ρ‚Ρ‹Π²Π°Π΅ΠΌΡƒΡŽ ΠΏΠΎΠ²Π΅Ρ€Ρ…Π½ΠΎΡΡ‚ΡŒ. Для Ρ€Π΅Π°Π»ΠΈΠ·Π°Ρ†ΠΈΠΈ Ρ‚Π°ΠΊΠΎΠ³ΠΎ ΠΊΠΎΠΌΠΏΠ΅Π½ΡΠΈΡ€ΡƒΡŽΡ‰Π΅Π³ΠΎ воздСйствия Π²ΠΎΠ·ΠΌΠΎΠΆΠ½ΠΎ ΠΏΡ€ΠΈΠΌΠ΅Π½Π΅Π½ΠΈΠ΅ ΠΏΠ»Π°Π·ΠΌΠ΅Π½Π½Ρ‹Ρ… источников заряТСнных частиц, способных ΠΏΡ€ΠΈ ΠΈΠ·ΠΌΠ΅Π½Π΅Π½ΠΈΠΈ полярности ΡƒΡΠΊΠΎΡ€ΡΡŽΡ‰Π΅Π³ΠΎ напряТСния Ρ„ΠΎΡ€ΠΌΠΈΡ€ΠΎΠ²Π°Ρ‚ΡŒ ΠΏΡƒΡ‡ΠΊΠΈ ΠΎΠ±ΠΎΠΈΡ… Π·Π½Π°ΠΊΠΎΠ². Основная ΠΏΡ€ΠΎΠ±Π»Π΅ΠΌΠ° ΠΏΡ€ΠΈ этом Π·Π°ΠΊΠ»ΡŽΡ‡Π°Π΅Ρ‚ΡΡ Π² слоТности достиТСния ΠΎΠ΄Π½ΠΎΠ²Ρ€Π΅ΠΌΠ΅Π½Π½ΠΎ высокой эффСктивности эмиссии ΠΈΠΎΠ½ΠΎΠ² ΠΈ элСктронов, ΠΏΠΎΡΠΊΠΎΠ»ΡŒΠΊΡƒ условия ΠΈΡ… эмиссии ΠΈΠ· ΠΏΠ»Π°Π·ΠΌΡ‹ сущСствСнно Ρ€Π°Π·Π»ΠΈΡ‡Π°ΡŽΡ‚ΡΡ. Π’ Π΄Π°Π½Π½ΠΎΠΉ ΡΡ‚Π°Ρ‚ΡŒΠ΅ ΠΏΡ€Π΅Π΄Π»ΠΎΠΆΠ΅Π½Π° концСпция ΠΈ разработанная Π½Π° Π΅Π΅ основС конструкция ΠΌΠ°ΠΊΠ΅Ρ‚Π° ΠΌΡƒΠ»ΡŒΡ‚ΠΈΡ€Π°Π·Ρ€ΡΠ΄Π½ΠΎΠ³ΠΎ ΠΏΠ»Π°Π·ΠΌΠ΅Π½Π½ΠΎΠ³ΠΎ элСктронно-ΠΈΠΎΠ½Π½ΠΎΠ³ΠΎ источника для совмСстного ΠΈΠ»ΠΈ ΠΏΠΎΠΏΠ΅Ρ€Π΅ΠΌΠ΅Π½Π½ΠΎΠ³ΠΎ формирования элСктронных ΠΈ ΠΈΠΎΠ½Π½Ρ‹Ρ… ΠΏΡƒΡ‡ΠΊΠΎΠ². Показано, Ρ‡Ρ‚ΠΎ Π² ΠΏΡ€Π΅Π΄Π»ΠΎΠΆΠ΅Π½Π½ΠΎΠΉ конструкции рСализуСтся Π²ΠΎΠ·ΠΌΠΎΠΆΠ½ΠΎΡΡ‚ΡŒ ΠΏΠΎΠ²Ρ‹ΡˆΠ΅Π½ΠΈΡ пСрвСанса Π·Π° счСт компСнсации объСмного заряда частицами ΠΏΡ€ΠΎΡ‚ΠΈΠ²ΠΎΠΏΠΎΠ»ΠΎΠΆΠ½ΠΎΠ³ΠΎ Π·Π½Π°ΠΊΠ°. ΠŸΡ€ΠΈΠ²Π΅Π΄Π΅Π½ ряд характСристик Ρ€Π°Π·Ρ€Π°Π±ΠΎΡ‚Π°Π½Π½ΠΎΠ³ΠΎ ΠΌΠ°ΠΊΠ΅Ρ‚Π° ΠΏΠ»Π°Π·ΠΌΠ΅Π½Π½ΠΎΠ³ΠΎ элСктронно-ΠΈΠΎΠ½Π½ΠΎΠ³ΠΎ источника (Π²ΠΎΠ»ΡŒΡ‚Π°ΠΌΠΏΠ΅Ρ€Π½Ρ‹Π΅ характСристики извлСчСния элСктронов ΠΈ ΠΈΠΎΠ½ΠΎΠ²) ΠΈ ΠΏΠΎΠΊΠ°Π·Π°Π½Π° Π΅Π³ΠΎ ΠΏΠ΅Ρ€ΡΠΏΠ΅ΠΊΡ‚ΠΈΠ²Π½ΠΎΡΡ‚ΡŒ для дальнСйшСй Ρ€Π°Π·Ρ€Π°Π±ΠΎΡ‚ΠΊΠΈ Π½Π° Π΅Π³ΠΎ основС элСктронно-ΠΈΠΎΠ½Π½ΠΎΠ³ΠΎ источника для ΠΏΡ€ΠΎΠΌΡ‹ΡˆΠ»Π΅Π½Π½ΠΎΠ³ΠΎ примСнСния. Π‘ΠΎΠ²ΠΌΠ΅Ρ‰Π΅Π½Π½Ρ‹Π΅ ΠΈΠ»ΠΈ ΠΏΠΎΠΏΠ΅Ρ€Π΅ΠΌΠ΅Π½Π½Ρ‹Π΅ ΠΈΠΎΠ½Π½ΠΎ-элСктронныС ΠΏΡƒΡ‡ΠΊΠΈ, Ρ„ΠΎΡ€ΠΌΠΈΡ€ΡƒΠ΅ΠΌΡ‹Π΅ Π² прСдставлСнном источникС, ΠΌΠΎΠ³ΡƒΡ‚ Π±Ρ‹Ρ‚ΡŒ ΠΈΡΠΏΠΎΠ»ΡŒΠ·ΠΎΠ²Π°Π½Ρ‹ ΠΏΡ€ΠΈ Ρ€Π΅Π°Π»ΠΈΠ·Π°Ρ†ΠΈΠΈ Ρ‚Π΅Ρ…Π½ΠΎΠ»ΠΎΠ³ΠΈΠΉ нанСсСния Ρ‚ΠΎΠ½ΠΊΠΎΠΏΠ»Π΅Π½ΠΎΡ‡Π½Ρ‹Ρ… слоСв ΠΌΠ΅Ρ‚Π°Π»Π»ΠΎΠ², ΠΏΠΎΠ»ΡƒΠΏΡ€ΠΎΠ²ΠΎΠ΄Π½ΠΈΠΊΠΎΠ² ΠΈ диэлСктриков для поддСрТания процСссов ΠΈΠΎΠ½ΠΈΠ·Π°Ρ†ΠΈΠΈ ΠΈ обСспСчСния устойчивого горСния разряда, компСнсации ΠΊΠ°ΠΊ объСмного заряда Π² ΠΏΡƒΡ‡ΠΊΠ΅, Ρ‚Π°ΠΊ ΠΈ повСрхностного Π½Π° Ρ„ΠΎΡ€ΠΌΠΈΡ€ΡƒΠ΅ΠΌΠΎΠΉ ΠΏΠ»Π΅Π½ΠΊΠ΅

    Magnetoelectric ordering of BiFeO3 from the perspective of crystal chemistry

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    In this paper we examine the role of crystal chemistry factors in creating conditions for formation of magnetoelectric ordering in BiFeO3. It is generally accepted that the main reason of the ferroelectric distortion in BiFeO3 is concerned with a stereochemical activity of the Bi lone pair. However, the lone pair is stereochemically active in the paraelectric orthorhombic beta-phase as well. We demonstrate that a crucial role in emerging of phase transitions of the metal-insulator, paraelectric-ferroelectric and magnetic disorder-order types belongs to the change of the degree of the lone pair stereochemical activity - its consecutive increase with the temperature decrease. Using the structural data, we calculated the sign and strength of magnetic couplings in BiFeO3 in the range from 945 C down to 25 C and found the couplings, which undergo the antiferromagnetic-ferromagnetic transition with the temperature decrease and give rise to the antiferromagnetic ordering and its delay in regard to temperature, as compared to the ferroelectric ordering. We discuss the reasons of emerging of the spatially modulated spin structure and its suppression by doping with La3+.Comment: 18 pages, 5 figures, 3 table

    Gas discharge plasma disturbance by electron extractio

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    Gruzdev, V. A. Gas discharge plasma disturbance by electron extraction / V. A. Gruzdev, V. G. Zalesski, D. A. Antonovich // Plasma Physics and Plasma Technology : Ρ€roc. V Intern. Conf. on, Minsk, 18-22 Sept. 2006. / Institute of Molecular and Atomic Physics National Academy of Sciences of Belarus. – Minsk, 2006. – Vol. I. – P. 154–157

    Emission current formation in Plasma electron emitters

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    A model of the plasma electron emitter is considered, in which the current redistribution over electrodes of the emitter gas-discharge structure and weak electric field formation in plasma are taken into account as functions of the emission current. The calculated and experimental dependences of the switching parameters, extraction efficiency, and strength of the electric field in plasma on the accelerating voltage and geometrical sizes of the emission channel are presented

    Automated management by an electron-beam gun with the plasma emitter realised on the basis of the personal computer

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    РассматриваСтся Π²Π°Ρ€ΠΈΠ°Π½Ρ‚ Ρ€Π΅Π°Π»ΠΈΠ·Π°Ρ†ΠΈΠΈ систСмы Π°Π²Ρ‚ΠΎΠΌΠ°Ρ‚ΠΈΠ·ΠΈΡ€ΠΎΠ²Π°Π½Π½ΠΎΠ³ΠΎ управлСния элСктронно-Π»ΡƒΡ‡Π΅Π²Ρ‹ΠΌ энСргокомплСксом Π½Π° Π±Π°Π·Π΅ элСктронно-Π»ΡƒΡ‡Π΅Π²ΠΎΠΉ ΠΏΡƒΡˆΠΊΠΈ с ΠΏΠ»Π°Π·ΠΌΠ΅Π½Π½Ρ‹ΠΌ эмиттСром. РСализованная систСма Π°Π²Ρ‚ΠΎΠΌΠ°Ρ‚ΠΈΠ·ΠΈΡ€ΠΎΠ²Π°Π½Π½ΠΎΠ³ΠΎ управлСния элСктронно-Π»ΡƒΡ‡Π΅Π²ΠΎΠΉ ΠΏΡƒΡˆΠΊΠΎΠΉ с ΠΏΠ»Π°Π·ΠΌΠ΅Π½Π½Ρ‹ΠΌ эмиттСром Π½Π° Π±Π°Π·Π΅ ΠΏΠ΅Ρ€ΡΠΎΠ½Π°Π»ΡŒΠ½ΠΎΠ³ΠΎ ΠΊΠΎΠΌΠΏΡŒΡŽΡ‚Π΅Ρ€Π° с использованиСм собствСнной ΠΊΠΎΠΌΠΏΠΎΠ½Π΅Π½Ρ‚Ρ‹ Π²ΠΈΠ·ΡƒΠ°Π»ΠΈΠ·Π°Ρ†ΠΈΠΈ ΠΏΠΎΠΊΠ°Π·Π°Π½ΠΈΠΉ Π΄Π°Ρ‚Ρ‡ΠΈΠΊΠΎΠ² прСдусматриваСт связь ΠΌΠ΅ΠΆΠ΄Ρƒ основными элСмСнтами элСктронно-Π»ΡƒΡ‡Π΅Π²ΠΎΠΉ установки. Π£ΠΏΡ€Π°Π²Π»Π΅Π½ΠΈΠ΅ Ρ†ΠΈΠΊΠ»ΠΎΠΌ элСктронно- Π»ΡƒΡ‡Π΅Π²ΠΎΠΉ сварки осущСствляСтся с ΡƒΡ‡Π΅Ρ‚ΠΎΠΌ рассмотрСнных основных особСнностСй построСния систСм Π°Π²Ρ‚ΠΎΠΌΠ°Ρ‚ΠΈΠ·ΠΈΡ€ΠΎΠ²Π°Π½Π½ΠΎΠ³ΠΎ управлСния элСктронно-Π»ΡƒΡ‡Π΅Π²Ρ‹ΠΌΠΈ энСргокомплСксами Π½Π° Π±Π°Π·Π΅ элСктронно-Π»ΡƒΡ‡Π΅Π²Ρ‹Ρ… ΠΏΡƒΡˆΠ΅ΠΊ с ΠΏΠ»Π°Π·ΠΌΠ΅Π½Π½Ρ‹ΠΌ эмиттСром.The variant of realization of system of automated management by an electron beam energy- complex on the basis of an electron beam gun with the plasma emitter is considered. The realized system of automated management by an electron beam gun with the plasma emitter on the basis of the personal computer with usage of the own component of visualization of indications of sensors provides communication between basic elements of electron beam installation. Management by a cycle of electron beam welding is carried out taking into account the considered basic features of construction of systems of automated management by an electron beam energy-complexes on the basis of electron beam guns with the plasma emitter

    Way and device for diagnostics of electron-optical systems of plasma electron sources

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    ΠŸΡ€Π΅Π΄ΡΡ‚Π°Π²Π»Π΅Π½ΠΎ устройство, ΠΏΠΎΠ·Π²ΠΎΠ»ΡΡŽΡ‰Π΅Π΅ ΠΎΠΏΡ€Π΅Π΄Π΅Π»ΡΡ‚ΡŒ эмиттанс ΠΈ распрСдСлСниС плотности Ρ‚ΠΎΠΊΠ° ΠΏΠΎ ΡΠ΅Ρ‡Π΅Π½ΠΈΡŽ элСктронного ΠΏΡƒΡ‡ΠΊΠ°, Π° Ρ‚Π°ΠΊΠΆΠ΅ Π½Π° ΠΈΡ… основС ряд Π΄ΠΎΠΏΠΎΠ»Π½ΠΈΡ‚Π΅Π»ΡŒΠ½Ρ‹Ρ… характСристик: Π΄ΠΈΠ°ΠΌΠ΅Ρ‚Ρ€ ΠΏΡƒΡ‡ΠΊΠ°, Π΅Π³ΠΎ ΡΡ€ΠΊΠΎΡΡ‚ΡŒ, Ρ€Π°ΡΡ…ΠΎΠ΄ΠΈΠΌΠΎΡΡ‚ΡŒ, Ρ…Π°ΠΎΡ‚ΠΈΡ‡Π΅ΡΠΊΡƒΡŽ ΡΠΊΠΎΡ€ΠΎΡΡ‚ΡŒ элСктронов Π² ΠΏΡƒΡ‡ΠΊΠ΅. ΠŸΡ€Π΅Π΄Π»ΠΎΠΆΠ΅Π½ способ диагностики элСктронно-оптичСских систСм ΠΏΠ»Π°Π·ΠΌΠ΅Π½Π½Ρ‹Ρ… источников элСктронов, основанный Π½Π° сравнСнии Ρ„Π°Π·ΠΎΠ²Ρ‹Ρ… объСмов Ρ„ΠΎΡ€ΠΌΠΈΡ€ΡƒΠ΅ΠΌΡ‹Ρ… ΠΏΡƒΡ‡ΠΊΠΎΠ² ΠΈ ΠΏΠΎΠ·Π²ΠΎΠ»ΡΡŽΡ‰ΠΈΠΉ Π·Π½Π°Ρ‡ΠΈΡ‚Π΅Π»ΡŒΠ½ΠΎ ΡΠΎΠΊΡ€Π°Ρ‚ΠΈΡ‚ΡŒ объСм ΡΠΊΡΠΏΠ΅Ρ€ΠΈΠΌΠ΅Π½Ρ‚Π°Π»ΡŒΠ½ΠΎΠΉ Ρ€Π°Π±ΠΎΡ‚Ρ‹ ΠΏΠΎ ΠΎΠΏΡ‚ΠΈΠΌΠΈΠ·Π°Ρ†ΠΈΠΈ Π³Π΅ΠΎΠΌΠ΅Ρ‚Ρ€ΠΈΠΈ Ρ‚Π°ΠΊΠΈΡ… систСм, Π° Ρ‚Π°ΠΊΠΆΠ΅ систСм фокусировки ΠΈ отклонСния.The device, allowing to determine the emittance and distribution of current density over an electronic beam section and also on their basis a number of additional characteristics: diameter of a beam, its brightness, divergence, chaotic speed of electrons in a beam, is presented. The way of diagnostics of electron-optical systems of plasma electron sources is offered, based on comparison of phase volumes of formed beams and allowing to reduce considerably the volume of experimental work on optimization of geometry of such systems, and also the systems of focusing and deviation
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