9 research outputs found
Facile fabrication of suspended as-grown carbon nanotube devices
A simple scalable scheme is reported for fabricating suspended carbon
nanotube field effect transistors (CNT-FETs) without exposing pristine as-grown
carbon nanotubes to subsequent chemical processing. Versatility and ease of the
technique is demonstrated by controlling the density of suspended nanotubes and
reproducing devices multiple times on the same electrode set. Suspending the
carbon nanotubes results in ambipolar transport behavior with negligible
hysteresis. The Hooges constant of the suspended CNT-FETs (2.6 x 10-3) is about
20 times lower than for control CNT-FETs on SiO2 (5.6 x 10-2).Comment: 15 pages, 4 figure
Nanotransfer Printing of Organic and Carbon Nanotube Thin-Film Transistors on Plastic Substrates
A printing process for high-resolution transfer of all components for organic
electronic devices on plastic substrates has been developed and demonstrated
for pentacene (Pn), poly (3-hexylthiophene) and carbon nanotube (CNT) thin-film
transistors (TFTs). The nanotransfer printing process allows fabrication of an
entire device without exposing any component to incompatible processes and with
reduced need for special chemical preparation of transfer or device substrates.
Devices on plastic substrates include a Pn TFT with a saturation, field-effect
mobility of 0.09 cm^2 (Vs)^-1 and on/off ratio approximately 10^4 and a CNT TFT
which exhibits ambipolar behavior and no hysteresis.Comment: to appear in Applied Physics Letter
Quantifying Field-Induced Contrast Effects in Photoelectron Emission Microscopy
ABSTRACT Samples consisting of electrically isolated titanium lines fabricated on a titanium surface were used to quantify voltage-induced contrast effects in photoelectron emission microscopy (PEEM). Induced contrast effects were observed to extend 6 µm for a -5 V bias applied to a 303 nm tall raised line. We therefore explored, via numerical calculation, the spatial extent of the perturbation to the PEEM accelerating field caused by the bias applied across the step height. The intensity full width at half minimum agreed well with the calculated width defined by the 10% level of lateral field strength. For a line 550 nm tall, a correspondence was found for a calculated width defined by a 5% lateral field strength. It was observed that neighboring structures a few µm away affected the image contrast, for sufficiently strong applied bias. This suggests that effects can easily be induced at distances of 0.5 µm for modest applied voltages, as has been previously observed for structures buried under oxide layers 0.5 µm thic