Microwave Photoconductivity in Two-Dimensional Electron Systems due to Photon-Assisted Interaction of Electrons with Leaky Interface Phonons

We calculate the contribution of the photon-assisted interaction of electrons with leaky interface phonons to the dissipative dc photoconductivity of a two-dimensional electron system in a magnetic field. The calculated photoconductivity as a function of the frequency of microwave radiation and the magnetic field exhibits pronounced oscillations. The obtained oscillation structure is different from that in the case of photon-assisted interaction with impurities. We demonstrate that at a sufficiently strong microwave radiation in the certain ranges of its frequency (or in certain ranges of the magnetic field) this mechanism can result in the absolute negative conductivity.Comment: 3 pages, 1 figur

Absolute Negative Conductivity in Two-Dimensional Electron Systems Associated with Acoustic Scattering Stimulated by Microwave Radiation

We discuss the feasibility of absolute negative conductivity (ANC) in two-dimensional electron systems (2DES) stimulated by microwave radiation in transverse magnetic field. The mechanism of ANC under consideration is associated with the electron scattering on acoustic piezoelectric phonons accompanied by the absorption of microwave photons. It is demonstrated that the dissipative components of the 2DES dc conductivity can be negative ($\sigma_{xx} = \sigma_{yy} < 0$) when the microwave frequency $\Omega$ is somewhat higher than the electron cyclotron frequency $\Omega_c$ or its harmonics. The concept of ANC associated with such a scattering mechanism can be invoked to explain the nature of the occurrence of zero-resistance ``dissipationless'' states observed in recent experiments.Comment: 7 pager, 2 figure

Long-range coupling and scalable architecture for superconducting flux qubits

Constructing a fault-tolerant quantum computer is a daunting task. Given any design, it is possible to determine the maximum error rate of each type of component that can be tolerated while still permitting arbitrarily large-scale quantum computation. It is an underappreciated fact that including an appropriately designed mechanism enabling long-range qubit coupling or transport substantially increases the maximum tolerable error rates of all components. With this thought in mind, we take the superconducting flux qubit coupling mechanism described in PRB 70, 140501 (2004) and extend it to allow approximately 500 MHz coupling of square flux qubits, 50 um a side, at a distance of up to several mm. This mechanism is then used as the basis of two scalable architectures for flux qubits taking into account crosstalk and fault-tolerant considerations such as permitting a universal set of logical gates, parallelism, measurement and initialization, and data mobility.Comment: 8 pages, 11 figure

Spin Depolarization in Quantum Wires Polarized Spontaneously in a Zero Magnetic Field

The conditions for a spontaneous spin polarization in a quantum wire positioned in a zero magnetic field are analyzed under weak population of one-dimensional subbands that gives rise to the efficient quenching of the kinetic energy by the exchange energy of carriers. The critical linear concentration of carriers above which the quasi one-dimensional gas undergoes a complete spin depolarization is determined by the Hartree-Fock approximation. The dependence of the critical linear concentration on the concentration of carriers is defined to reveal the interplay of the spin depolarization with the evolution of the 0.7 (2e2/h) feature in the quantum conductance staircase from the e2/h to 3/2 (e2/h) values. This dependence is used to study the effect of the hole concentration on the 0.7 (2e2/h) feature in the quantum conductance staircase of the quantum wire prepared inside the p-type silicon quantum well using the split-gate technique. The 1D channel is demonstrated to be spin-polarized at the linear concentration of holes lower than the critical linear concentration, because the 0.7 (2e2/h) feature is close to the value of 0.5 (2e2/h) that indicates the spin degeneracy lifting for the first step of the quantum conductance staircase. The 0.7 (2e2/h) feature is found to take however its normal magnitude when the linear concentration of holes attains the critical value corresponding to the spin depolarization. The variations in the height of the 0.7 (2e2/h) feature observed in the hole quantum conductance staircase that is revealed by the p-type silicon quantum wire seem to be related to the evidences of the quantum conductance staircase obtained by varying the concentration of electrons in the 1D channel prepared inside the GaAs-AlGaAs heterojunction.Comment: 27 pages, 5 figure