Electrically-induced n-i-p junctions in multiple graphene layer structures

The Fermi energies of electrons and holes and their densities in different graphene layers (GLs) in the n- and p-regions of the electrically induced n-i-p junctions formed in multiple-GL structures are calculated both numerically and using a simplified analytical model. The reverse current associated with the injection of minority carriers through the n- and p-regions in the electrically-induced n-i-p junctions under the reverse bias is calculated as well. It is shown that in the electrically-induced n-i-p junctions with moderate numbers of GLs the reverse current can be substantially suppressed. Hence, multiple-GL structures with such n-i-p junctions can be used in different electron and optoelectron devices.Comment: 7 pages, 6 figure

Limiting Distribution of Frobenius Numbers for n=3n=3

The purpose of this paper is to give a complete derivation of the limiting distribution of large Frobenius numbers outlined in earlier work of J. Bourgain and Ya. Sinai and fill some gaps formulated there as hypotheses.Comment: 13 page