25 research outputs found

    The Edge Electric Field of a Pyroelectric and its Applications

    Full text link
    Following a change of temperature of a pyroelectric (PE), a depolarizing electric field appears both inside the PE, as well as outside its edges, the edge depolarizing electric field (EDEF). The EDEF extends outwards up to a distance of the order of magnitude of the PE width. The mapping and the strength of the EDEF have been calculated and analyzed for the case of a semi-infinite pyroelectric plate. This strong EDEF (104-105 V/cm), when penetrating into the surrounding medium, creates a variety of physical effects: inducing electrical current in a semiconductor and affecting its resistance, accelerating charged and neutral particles in vacuum or in a gas, generating electromagnetic waves, modifying optical characteristics by electrooptical and photoelasic effects, generating piezoelectric deformation and more. We show that these EDEF induced effects could serve as a basis for the development of various applications and devices.Comment: 27 pages including 13 figure

    Electric Field Effect Analysis of Thin PbTe films on high-epsilon SrTiO3 Substrate

    Full text link
    Thin PbTe films (thickness 500 - 600 angstrom), deposited on SrTiO3, have been investigated by electric field effect (EFE). The high resistivity of such thin films warrants a high sensitivity of the EFE method. The SrTiO3 substrate serves as the dielectric layer in the Gate-Dielectric-PbTe structure. Due to the large dielectric constant of SrTiO3, particularly at low temperatures, the electric displacement D in the film reaches the high value of about 10^8 V/cm, and the EFE introduced charge into the PbTe film amounts to ~ 8 microC/cm2. The high D permits to measure the EFE resistance and Hall constant over a wide region of D, revealing the characteristic features of their D-dependence. An appropriate theoretical model has been formulated, showing that, for such films, one can measure the dependence of the Fermi level on D. In fact, we demonstrate that shifting the Fermi level across the gap by varying D, the density-of-states of the in-gape states can be mapped out. Our results show, that the PbTe layers studied, possess a mobility gap exceeding the gap of bulk PbTe.Comment: 27 pages, 12 figure

    Thermal Wave Induced Edge Electrical Field of Pyroelectric: Spatial Pattern Mapping and Effect of Ambient Conditions

    Full text link
    We have recently analyzed theoretically the main characteristics of the edge depolarizing electric field (EDEF), in the vicinity of a non-polar face of a pyroelectric. In this work we measured and characterized the EDEF, excited by a harmonical thermal wave. We present here experimental results obtained on a pyroelectric crystal LiTaO3, confirming our theoretical predictions. We present the theoretical analysis and description of the thermal wave and the induced harmonically varying EDEF. The calculations assume an equivalent circuit of a pyroelectric capacitive current source. The measured magnitude of the EDEF and its spatial variation agree well with the theoretical model. The effect of the air pressure at the pyroelectric/air interface, on the EDEF, was determined in the interval 10^3 - 10^-6 torr. We found that EDEF increases significantly with decreasing air pressure, presumably due to diminishing of adsorption screening at the polar faces. Teflon plates, covering the polar faces, prevent accumulation of screening charged particles, resulting in a drastic increase of EDEF

    Characterization of high-temperature PbTe p-n junctions prepared by thermal diffusion and by ion-implantation

    Full text link
    We describe here the characteristics of two types of high-quality PbTe p-n-junctions, prepared in this work: (1) by thermal diffusion of In4Te3 gas (TDJ), and (2) by ion implantation (implanted junction, IJ) of In (In-IJ) and Zn (Zn-IJ). The results, as presented here, demonstrate the high quality of these PbTe diodes. Capacitance-voltage and current-voltage characteristics have been measured. The measurements were carried out over a temperature range from ~ 10 K to ~ 180 K. The latter was the highest temperature, where the diode still demonstrated rectifying properties. This maximum operating temperature is higher than any of the earlier reported results. The saturation current density, J0, in both diode types, was ~ 10^-5 A/cm2 at 80 K, while at 180 K J0 ~ 10^-1 A/cm2 in TDJ and ~ 1 A/cm2 in both ion-implanted junctions. At 80 K the reverse current started to increase markedly at a bias of ~ 400 mV for TDJ, and at ~550 mV for IJ. The ideality factor n was about 1.5-2 for both diode types at 80 K. The analysis of the C-V plots shows that the junctions in both diode types are linearly graded. The analysis of the C-V plots allows also determining the height of the junction barrier, the concentrations and the concentration gradient of the impurities, and the temperature dependence of the static dielectric constant. The zero-bias-resistance x area products (R0Ae) at 80 K are: 850 OHMcm2 for TDJ, 250 OHMcm2 for In-IJ, and ~ 80 OHMcm2 for Zn-IJ, while at 180 K R0Ae ~ 0.38 OHMcm2 for TDJ, and ~ 0.1 OHMcm2 for IJ. The estimated detectivity is: D* ~ 10^10 cmHz^(1/2)/W up to T=140 K, determined mainly by background radiation, while at T=180 K, D* decreases to 108-107 cmHz^(1/2)/W, and is determined by the Johnson noise

    Π”Π•Π’Π˜Π’ΠΠ›Π˜Π—Π˜Π ΠžΠ’ΠΠΠΠ«Π• Π‘ΠžΠ‘Π£Π”Π˜Π‘Π’Π«Π• ΠŸΠ ΠžΠ’Π•Π—Π«: Π˜Π‘Π‘Π›Π•Π”ΠžΠ’ΠΠΠ˜Π• IN VIVO

    Get PDF
    Porcine intrathoracic arteries were devitalized by application of low temperatures and electron beam irradiati- on. The resulted connective tissues vascular scaffolds could be used as the prosthesis of small diameter arteries (≀6 mm). Biocompatibility, immunogenicity degree and thrombogenicity were estimated in the study. Results of electron microscopy are presented. Described treatment reduces an immunogenicity of xenoarteries, their ade- quate functioning during 6 months was shown by means of experimental surgeries. Для Π΄Π΅Π²ΠΈΡ‚Π°Π»ΠΈΠ·Π°Ρ†ΠΈΠΈ Π²Π½ΡƒΡ‚Ρ€Π΅Π½Π½ΠΈΡ… Π³Ρ€ΡƒΠ΄Π½Ρ‹Ρ… Π°Ρ€Ρ‚Π΅Ρ€ΠΈΠΉ свинСй использовали Π½ΠΈΠ·ΠΊΠΈΠ΅ Ρ‚Π΅ΠΌΠΏΠ΅Ρ€Π°Ρ‚ΡƒΡ€Ρ‹ ΠΈ ΠΎΠ±Π»ΡƒΡ‡Π΅Π½ΠΈΠ΅ ΠΏΠΎΡ‚ΠΎΠΊΠΎΠΌ элСктронов. ΠŸΠΎΠ»ΡƒΡ‡Π΅Π½Π½Ρ‹Π΅ ΡΠΎΠ΅Π΄ΠΈΠ½ΠΈΡ‚Π΅Π»ΡŒΠ½ΠΎΡ‚ΠΊΠ°Π½Π½Ρ‹Π΅ сосудистыС скаффолды Π² Π΄Π°Π½Π½ΠΎΠΌ исслСдовании Π±Ρ‹Π»ΠΈ ΠΈΡΠΏΠΎΠ»ΡŒΠ·ΠΎΠ²Π°Π½Ρ‹ Π² качСствС ΠΏΡ€ΠΎΡ‚Π΅Π·ΠΎΠ² Π°Ρ€Ρ‚Π΅Ρ€ΠΈΠΉ ΠΌΠ°Π»ΠΎΠ³ΠΎ Π΄ΠΈΠ°ΠΌΠ΅Ρ‚Ρ€Π° (≀6 ΠΌΠΌ). Π’ Ρ€Π°Π±ΠΎΡ‚Π΅ ΠΈΠ·ΡƒΡ‡Π°Π»ΠΈ биосовмС- ΡΡ‚ΠΈΠΌΠΎΡΡ‚ΡŒ, ΡΡ‚Π΅ΠΏΠ΅Π½ΡŒ иммуногСнности, Ρ‚Ρ€ΠΎΠΌΠ±ΠΎΠ³Π΅Π½Π½ΠΎΡΡ‚ΡŒ Π΄Π΅Π²ΠΈΡ‚Π°Π»ΠΈΠ·ΠΈΡ€ΠΎΠ²Π°Π½Π½Ρ‹Ρ… Π°Ρ€Ρ‚Π΅Ρ€ΠΈΠΉ. ΠŸΡ€ΠΈΠ²Π΅Π΄Π΅Π½Ρ‹ Ρ€Π΅Π·ΡƒΠ»ΡŒΡ‚Π°- Ρ‚Ρ‹ элСктронной микроскопии. Показано сниТСниС иммуногСнности Π΄Π΅Π²ΠΈΡ‚Π°Π»ΠΈΠ·ΠΈΡ€ΠΎΠ²Π°Π½Π½Ρ‹Ρ… ксСноартСрий. Π­ΠΊΡΠΏΠ΅Ρ€ΠΈΠΌΠ΅Π½Ρ‚Π°Π»ΡŒΠ½Ρ‹Π΅ ΠΎΠΏΠ΅Ρ€Π°Ρ†ΠΈΠΈ продСмонстрировали ΠΈΡ… Π°Π΄Π΅ΠΊΠ²Π°Ρ‚Π½ΠΎΠ΅ Ρ„ΡƒΠ½ΠΊΡ†ΠΈΠΎΠ½ΠΈΡ€ΠΎΠ²Π°Π½ΠΈΠ΅ Π² Ρ‚Π΅Ρ‡Π΅Π½ΠΈΠ΅ 6 мСс.

    INFLUENCE OF THE METAL MATRIX STRUCTURE OF HIGH-DUTY CAST IRON ON COERCIVELY SENSITIVE MAGNETIC PARAMETER AND SPEED OF SOUND

    No full text
    The analysis of influence of changes in the structure of the metal base of high-duty cast ironcompact castings with a constant form of graphite inclusions on the coercive sensitive magnetic parameters and the speed of sound is held. The efficiency of joint use of the results of magnetic and ultrasonic measurements to control the shape of inclusions in the iron and pearlite content in its metallic matrix is shown
    corecore