Strong Tunneling and Coulomb Blockade in a Single-Electron Transistor

We have developed a detailed experimental study of a single-electron transistor in a strong tunneling regime. Although weakened by strong charge fluctuations, Coulomb effects were found to persist in all samples including one with the effective conductance 8 times higher than the quantum value (6.45 k$\Omega$)$^{-1}$. A good agreement between our experimental data and theoretical results for the strong tunneling limit is found. A reliable operation of transistors with conductances 3-4 times larger than the quantum value is demonstrated.Comment: revtex, 4 page

Strong Electron Tunneling through a Small Metallic Grain

Electron tunneling through mesoscopic metallic grains can be treated perturbatively only provided the tunnel junction conductances are sufficiently small. If it is not the case, fluctuations of the grain charge become strong. As a result (i) contributions of all -- including high energy -- charge states become important and (ii) excited charge states become broadened and essentially overlap. At the same time the grain charge remains discrete and the system conductance $e$-periodically depends on the gate charge. We develop a nonperturbative approach which accounts for all these features and calculate the temperature dependent conductance of the system in the strong tunneling regime at different values of the gate charge.Comment: revtex, 8 pages, 2 .ps figure

Statistics of Current Fluctuations and Electron-Electron Interactions in Mesoscopic Coherent Conductors

We formulate a general path integral approach which describes statistics of current fluctuations in mesoscopic coherent conductors at arbitrary frequencies and in the presence of interactions. Applying this approach to the non-interacting case, we analyze the frequency dispersion of the third cumulant of the current operator ${\cal S}_3$ at frequencies well below both the inverse charge relaxation time and the inverse electron dwell time. This dispersion turns out to be important in the frequency range comparable to applied voltages. For comparatively transparent conductors it may lead to the sign change of ${\cal S}_3$. We also analyze the behavior of the second cumulant of the current operator ${\cal S}_2$ (current noise) in the presence of electron-electron interactions. In a wide range of parameters we obtain explicit universal dependencies of ${\cal S}_2$ on temperature, voltage and frequency. We demonstrate that Coulomb interaction decreases the Nyquist noise. In this case the interaction correction to the noise spectrum is governed by the combination $\sum_nT_n(T_n-1)$, where $T_n$ is the transmission of the $n$-th conducting mode. The effect of electron-electron interactions on the shot noise is more complicated. At sufficiently large voltages we recover two different interaction corrections entering with opposite signs. The net result is proportional to $\sum_nT_n(T_n-1)(1-2T_n)$, i.e. Coulomb interaction decreases the shot noise at low transmissions and increases it at high transmissions.Comment: 12 pages, 3 figures. To be published in the Proceedings of the SPIE Symposium on Fluctuations and Noise, Maspalomas, Grand Canaria, Spain (May 2004

Coulomb Interaction and Quantum Transport through a Coherent Scatterer

An interplay between charge discreteness, coherent scattering and Coulomb interaction yields nontrivial effects in quantum transport. We derive a real time effective action and an equivalent quantum Langevin equation for an arbitrary coherent scatterer and evaluate its current-voltage characteristics in the presence of interactions. Within our model, at large conductances $G_0$ and low $T$ (but outside the instanton-dominated regime) the interaction correction to $G_0$ saturates and causes conductance suppression by a universal factor which depends only on the type of the conductor.Comment: 4 pages, no figure

Electron transport and current fluctuations in short coherent conductors

Employing a real time effective action formalism we analyze electron transport and current fluctuations in comparatively short coherent conductors in the presence of electron-electron interactions. We demonstrate that, while Coulomb interaction tends to suppress electron transport, it may {\it strongly enhance} shot noise in scatterers with highly transparent conducting channels. This effect of excess noise is governed by the Coulomb gap observed in the current-voltage characteristics of such scatterers. We also analyze the frequency dispersion of higher current cumulants and emphasize a direct relation between electron-electron interaction effects and current fluctuations in disordered mesoscopic conductors.Comment: 16 pages, 4 figure

Magnetoresistance of n-GaAs at filamentary current flow

A large number of sharp structures are observed in the 4.2 K magnetoresistance of n-GaAs biased above impurity breakdown in a regime where current flow is filamentary. Most of the structures cannot be attributed to spectral properties of the semiconductor such as impact excitation of shallow donors or the magnetoimpurity effect. Experimental results give evidence that these structures are caused by a redistribution of the filamentary current flow when one filament border is swept across an imperfection in the material