Influence of Sr Content on CMR Effect in Polycrystalline La1−xSrxMnO3La_{1-x}Sr_{x}MnO_{3} Thin Films

The magnetoresistance of thin polycrystalline $La_{1-x}Sr_{x}MnO_{3}$ films deposited on lucalox substrate using metal organic chemical vapor deposition technique was investigated in pulsed magnetic fields up to 18 T in the temperature range 100-320 K. The influence of film preparation conditions, ambient temperature variation and Sr content is analyzed in order to determine the optimal conditions for the design of CMR-B-scalar magnetic field sensor based on thin manganite film, operating at room temperature

Magneto- and Electroresistance of Ultrathin Anisotropically Strained La-Sr-MnO Films

The magnetoresistance anisotropy of ultrathin La$\text{}_{0.83}$Sr$\text{}_{0.17}$Mn O$\text{}_{3}$ films deposited on NdGaO$\text{}_{3}$ substrate by metalorganic chemical vapour deposition technique was investigated. The electric-field-induced resistance change was studied up to electric fields of 10 kV/cm using ns duration electrical pulses. It was found that in ultrathin (< 10 nm) and thin (< 50 nm) films the origin of electric-field-induced resistance change is thermal. However, the films with thicknesses of about 20 nm, exhibit negative electric-field-induced resistance change, having a pure electronic nature. This effect is explained in terms of two-layer systems with imperfections located at the interface between the layers