XPS study of photo- and thermally-induced changes in amorphous Ge xAs40-xS60

cited By 8International audienceThe electronic structure of GexAs40- xS60 glasses and amorphous films has been obtained by means of X-ray photoelectron spectroscopy. Core level peaks and valence band spectra in the dependence on the composition as well as on structural changes initiated by illumination and/or annealing have been investigated and discussed. © 2005 Elsevier B.V. All rights reserved

X-ray photoelectron spectroscopy studies of thin GexSb40-xS6o films

Thin GexSb40-xS60 (x = 5, 15, 20, 25 and 27) chalcogenide films have been investigated by X-ray photoelectron spectroscopy (XPS). X-ray photoelectron spectra show that there is a peculiarity in the relative intensity ratio of the Sb 4d photoelectron peak associated with Sb2S3 to the Sb 4d photoelectron peak associated Sb2S5 at an average co-ordination number Z of 2.65-2.67. After contamination and photo-oxidation layers were removed from the surface of the films, X-ray photoelectron spectra were measured again. It has been found that binding energies of the Ge 2p and Sb 3d(3/2) photoelectron peaks, which reflect the electronic structure at lower core energy levels, are independent of Z. However, the binding energies of the Ge 3d and Sb 4d photoelectron peaks are more sensitive to Z and have a discontinuity at Z = 2.65

Mössbauer study of the degree of disorder in amorphous Ge-Sb-S

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