Highly charged ions with E1, M1, and E2 transitions within laser range

Level crossings in the ground state of ions occur when the nuclear charge Z and ion charge Z_ion are varied along an isoelectronic sequence until the two outermost shells are nearly degenerate. We examine all available level crossings in the periodic table for both near neutral ions and highly charged ions (HCIs). Normal E1 transitions in HCIs are in X-ray range, however level crossings allow for optical electromagnetic transitions that could form the reference transition for high accuracy atomic clocks. Optical E1 (due to configuration mixing), M1 and E2 transitions are available in HCIs near level crossings. We present scaling laws for energies and amplitudes that allow us to make simple estimates of systematic effects of relevance to atomic clocks. HCI clocks could have some advantages over existing optical clocks because certain systematic effects are reduced, for example they can have much smaller thermal shifts. Other effects such as fine-structure and hyperfine splitting are much larger in HCIs, which can allow for richer spectra. HCIs are excellent candidates for probing variations in the fine-structure constant, alpha, in atomic systems as there are transitions with the highest sensitivity to alpha-variation

Optical transitions in highly-charged californium ions with high sensitivity to variation of the fine-structure constant

We study electronic transitions in highly-charged Cf ions that are within the frequency range of optical lasers and have very high sensitivity to potential variations in the fine-structure constant, alpha. The transitions are in the optical despite the large ionisation energies because they lie on the level-crossing of the 5f and 6p valence orbitals in the thallium isoelectronic sequence. Cf16+ is a particularly rich ion, having several narrow lines with properties that minimize certain systematic effects. Cf16+ has very large nuclear charge and large ionisation energy, resulting in the largest alpha-sensitivity seen in atomic systems. The lines include positive and negative shifters

Dissipationless Anomalous Hall Current in the Ferromagnetic Spinel CuCr2_2Se4−x_{4-x}Brx_x

In a ferromagnet, an applied electric field $\bf E$ invariably produces an anomalous Hall current ${\bf J}_H$ that flows perpendicular to the plane defined by $\bf E$ and $\bf M$ (the magnetization). For decades, the question whether ${\bf J}_H$ is dissipationless (independent of the scattering rate), has been keenly debated without experimental resolution. In the ferromagnetic spinel CuCr$_2$Se$_{4-x}$Br$_x$, the resistivity $\rho$ (at low temperature) may be increased 1000 fold by varying $x$(Br), without degrading the $\bf M$. We show that ${\bf J}_H/E$ (normalized per carrier, at 5 K) remains unchanged throughout. In addition to resolving the controversy experimentally, our finding has strong bearing on the generation and study of spin-Hall currents in bulk samples.Comment: 7 pages, 6 figure

The financial stress index: identification of systemic risk conditions

This paper develops a financial stress index for the United States, the Cleveland Financial Stress Index (CFSI), which provides a continuous signal of financial stress and broad coverage of the areas that could indicate it. The index is based on daily public-market data collected from four sectors of the fi nancial markets—the credit, foreign exchange, equity, and interbank markets. A dynamic weighting method is employed to capture changes in the relative importance of these four sectors as they occur. In addition, the design of the index allows the origin of the stress to be identified. We compare the CFSI to alternative indexes, using a detailed benchmarking methodology, and show how the CFSI can be applied to systemic stress monitoring and early warning system design. To that end, we investigate alternative stress-signaling thresholds and frequency regimes and then establish optimal frequencies for filtering out market noise and idiosyncratic episodes. Finally, we quantify a powerful CFSI-based rating system that assigns a probability of systemic stress to ranges of CFSI outcomes.Systemic risk ; Risk assessment

Theory of Interfacial Plasmon-Phonon Scattering in Supported Graphene

One of the factors limiting electron mobility in supported graphene is remote phonon scattering. We formulate the theory of the coupling between graphene plasmon and substrate surface polar phonon (SPP) modes, and find that it leads to the formation of interfacial plasmon-phonon (IPP) modes, from which the phenomena of dynamic anti-screening and screening of remote phonons emerge. The remote phonon-limited mobilities for SiO$_{2}$, HfO$_{2}$, h-BN and Al$_{2}$O$_{3}$ substrates are computed using our theory. We find that h-BN yields the highest peak mobility, but in the practically useful high-density range the mobility in HfO$_{2}$-supported graphene is high, despite the fact that HfO$_{2}$ is a high-$\kappa$ dielectric with low-frequency modes. Our theory predicts that the strong temperature dependence of the total mobility effectively vanishes at very high carrier concentrations. The effects of polycrystallinity on IPP scattering are also discussed.Comment: 33 pages, 7 figure