The role of Auger recombination in the temperature-dependent output characteristics (T0=∞)(T0=∞) of pp-doped 1.3 μm quantum dot lasers

Temperature invariant output slope efficiency and threshold current (T0=∞)(T0=∞) in the temperature range of 5–75 °C have been measured for 1.3 μm pp-doped self-organized quantum dot lasers. Similar undoped quantum dot lasers exhibit T0=69 KT0=69 K in the same temperature range. A self-consistent model has been employed to calculate the various radiative and nonradiative current components in pp-doped and undoped lasers and to analyze the measured data. It is observed that Auger recombination in the dots plays an important role in determining the threshold current of the pp-doped lasers.Peer Reviewedhttp://deepblue.lib.umich.edu/bitstream/2027.42/71264/2/APPLAB-85-22-5164-1.pd

Submonolayer Quantum Dots for High Speed Surface Emitting Lasers

We report on progress in growth and applications of submonolayer (SML) quantum dots (QDs) in high-speed vertical-cavity surface-emitting lasers (VCSELs). SML deposition enables controlled formation of high density QD arrays with good size and shape uniformity. Further increase in excitonic absorption and gain is possible with vertical stacking of SML QDs using ultrathin spacer layers. Vertically correlated, tilted or anticorrelated arrangements of the SML islands are realized and allow QD strain and wavefunction engineering. Respectively, both TE and TM polarizations of the luminescence can be achieved in the edge-emission using the same constituting materials. SML QDs provide ultrahigh modal gain, reduced temperature depletion and gain saturation effects when used in active media in laser diodes. Temperature robustness up to 100 °C for 0.98 μm range vertical-cavity surface-emitting lasers (VCSELs) is realized in the continuous wave regime. An open eye 20 Gb/s operation with bit error rates better than 10−12has been achieved in a temperature range 25–85 °Cwithout current adjustment. Relaxation oscillations up to ∼30 GHz have been realized indicating feasibility of 40 Gb/s signal transmission

DYNAMIC POSITRONIC BUNCH IN SURKO TRAP OF LEPTA FACILITY

Abstract On base of solution of dynamic equations of motion is presented the explanation of effect of influence "rotating wall" electric field the positron bunch in Surko trap, being one of the elements of LEPTA facility

1.3 \mathrmμm luminescence and gain from defect-free InGaAs-GaAs quantum dots grown by metal-organic chemical vapour deposition

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