Magnetotransport in dilute 2D Si-MOSFET system

The beating pattern of Shubnikov-de Haas oscillations is reproduced in both the crossed and tilted magnetic field configuration and in presence of zero-field valley splitting in Si-MOSFET system. The consequences of IQHE in extremely dilute 2DEG are discussed.Comment: 4 pages, 4 figure

Weak anisotropy and disorder dependence of the in-plane magnetoresistance in high mobility (100) Si-inversion layers

We report studies of the magnetoresistance (MR) in a two-dimensional electron system in (100) Si-inversion layers, for perpendicular and parallel orientations of the current with respect to the magnetic field in the 2D-plane. The magnetoresistance is almost isotropic; this result does not support the suggestion of the orbital origin of the MR in Si-inversion layer. In the hopping regime, however, the MR contains a weak anisotropic component that is non-monotonic in magnetic field. We found that the field, at which the MR saturates, for different samples varies by a factor of two, being lower or higher than the field of complete spin polarization of free carriers. Therefore, the saturation of the MR can not be identified with the spin polarization of free carriers.Comment: 4 pages, 4 figures; New data adde

Weak Field Hall Resistance and Effective Carrier Density Through Metal-Insulator Transition in Si-MOS Structures

We studied the weak field Hall voltage in 2D electron layers in Si-MOS structures with different mobilities, through the metal-insulator transition. In the vicinity of the critical density on the metallic side of the transition, we have found weak deviations (about 6-20 %) of the Hall voltage from its classical value. The deviations do not correlate with the strong temperature dependence of the diagonal resistivity rho_{xx}(T). The smallest deviation in R_{xy} was found in the highest mobility sample exhibiting the largest variation in the diagonal resistivity \rho_{xx} with temperature (by a factor of 5).Comment: 4 pages, 4 figures, RevTe

On the Cooling of Electrons in a Silicon Inversion Layer

The cooling of two-dimensional electrons in silicon-metal-oxide semiconductor field effect transistors is studied experimentally. Cooling to the lattice is found to be more effective than expected from the bulk electron-phonon coupling in silicon. Unexpectedly, the extracted heat transfer rate to phonons at low temperatures depends cubically on electron temperature, suggesting that piezoelectric coupling (absent in bulk silicon) dominates over deformation potential. According to our findings, at 100 mK, electrons farther than 0.1 mm from the contacts are mostly cooled by phonons. Using long devices and low excitation voltage we measure electron resistivity down to 100 mK and find that some of the "metallic" curves, reported earlier, turn insulating below about 300 mK. This finding renders the definition of the claimed 2D metal-insulator transition questionable. Previous low temperature measurements in silicon devices are analyzed and thumb rules for evaluating their electron temperatures are provided.Comment: 5 pages, 4 figures. Discussion corrected and a few references adde

Measurements of the magnetic properties of conduction electrons

We consider various methods and techniques for measuring electron magnetization and susceptibility, which are used in experimental condensed matter physics. The list of considered methods for macroscopic measurements includes magnetomechanic, electromagnetic, modulation-type, and also thermodynamic methods based on the chemical potential variation. We also consider local methods of magnetic measurements based on the spin Hall effects and NV-centers. Several scanning probe magnetometers-microscopes are considered, such as magnetic resonance force microscope, SQUID-microscope, and Hall microscope. The review focuses on the spin magnetization measurements of electrons in non-magnetic materials and artificial systems, particularly, in low-dimensional electron systems in semiconductors and in nanosystems, which came to the forefront in recent years.Comment: 31 pages, 26 figures. To appear in: Phys.Us