Electron transport in Coulomb- and tunnel-coupled one-dimensional systems

We develop a linear theory of electron transport for a system of two identical quantum wires in a wide range of the wire length L, unifying both the ballistic and diffusive transport regimes. The microscopic model, involving the interaction of electrons with each other and with bulk acoustical phonons allows a reduction of the quantum kinetic equation to a set of coupled equations for the local chemical potentials for forward- and backward-moving electrons in the wires. As an application of the general solution of these equations, we consider different kinds of electrical contacts to the double-wire system and calculate the direct resistance, the transresistance, in the presence of tunneling and Coulomb drag, and the tunneling resistance. If L is smaller than the backscattering length l_P, both the tunneling and the drag lead to a negative transresistance, while in the diffusive regime (L >>l_P) the tunneling opposes the drag and leads to a positive transresistance. If L is smaller than the phase-breaking length, the tunneling leads to interference oscillations of the resistances that are damped exponentially with L.Comment: Text 14 pages in Latex/Revtex format, 4 Postscript figure

Commensurability oscillations in the rf conductivity of unidirectional lateral superlattices: measurement of anisotropic conductivity by coplanar waveguide

We have measured the rf magnetoconductivity of unidirectional lateral superlattices (ULSLs) by detecting the attenuation of microwave through a coplanar waveguide placed on the surface. ULSL samples with the principal axis of the modulation perpendicular (S_perp) and parallel (S_||) to the microwave electric field are examined. For low microwave power, we observe expected anisotropic behavior of the commensurability oscillations (CO), with CO in samples S_perp and S_|| dominated by the diffusion and the collisional contributions, respectively. Amplitude modulation of the Shubnikov-de Haas oscillations is observed to be more prominent in sample S_||. The difference between the two samples is washed out with the increase of the microwave power, letting the diffusion contribution govern the CO in both samples. The failure of the intended directional selectivity in the conductivity measured with high microwave power is interpreted in terms of large-angle electron-phonon scattering.Comment: 8 pages, 5 figure

Exact Solution of the strong coupling t-V model with twisted boundary conditions

We present the solution of the one-dimensional t-V model with twisted boundary conditions in the strong coupling limit, t<<V and show that this model can be mapped onto the strong coupling Hubbard chain threaded by a fictitious flux proportional to the total momentum of the charge carriers. The high energy eigenstates are characterized by a factorization of degrees of freedom associated with configurations of soliton and antisoliton domains and degrees of freedom associated with the movement of ``holes'' through these domains. The coexistence of solitons and antisolitons leads to a strange flux dependence of the eigenvalues. We illustrate the use of this solution, deriving the full frequency dependence of the optical conductivity at half-filling and zero temperature.Comment: 11 pages, 1 figure; to be published in Physical Review

Investigation of Single Boron Acceptors at the Cleaved Si:B (111) Surface

The cleaved and (2 x 1) reconstructed (111) surface of p-type Si is investigated by scanning tunneling microscopy (STM). Single B acceptors are identified due to their characteristic voltage-dependent contrast which is explained by a local energetic shift of the electronic density of states caused by the Coulomb potential of the negatively charged acceptor. In addition, detailed analysis of the STM images shows that apparently one orbital is missing at the B site at sample voltages of 0.4 - 0.6 V, corresponding to the absence of a localized dangling-bond state. Scanning tunneling spectroscopy confirms a strongly altered density of states at the B atom due to the different electronic structure of B compared to Si.Comment: 6 pages, 7 figure

Why is the bandwidth of sodium observed to be narrower in photoemission experiments?

The experimentally predicted narrowing in the bandwidth of sodium is interpreted in terms of the non-local self-energy effect on quasi-particle energies of the electron liquid. The calculated self-energy correction is a monotonically increasing function of the wavenumber variable. The usual analysis of photo-emission experiments assumes the final state energies on the nearly-free-electron-like model and hence it incorrectly ascribes the non-local self-energy correction to the final state energies to the occupied state energies, thus leading to a seeming narrowing in the bandwidth.Comment: 9 page

Phonon drag thermopower and weak localization

Previous experimental work on a two-dimensional (2D) electron gas in a Si-on-sapphire device led to the conclusion that both conductivity and phonon drag thermopower $S^g$ are affected to the same relative extent by weak localization. The present paper presents further experimental and theoretical results on these transport coefficients for two very low mobility 2D electron gases in $\delta-$doped GaAs/Ga$_x$Al$_{1-x}$As quantum wells. The experiments were carried out in the temperature range 3-7K where phonon drag dominates the thermopower and, contrary to the previous work, the changes observed in the thermopower due to weak localization were found to be an order of magnitude less than those in the conductivity. A theoretical framework for phonon drag thermopower in 2D and 3D semiconductors is presented which accounts for this insensitivity of $S^g$ to weak localization. It also provides transparent physical explanations of many previous experimental and theoretical results.Comment: 19 page Revtex file, 3 Postscript figur

Edge-Magnetoplasmon Wave-Packet Revivals in the Quantum Hall Effect

The quantum Hall effect is necessarily accompanied by low-energy excitations localized at the edge of a two-dimensional electron system. For the case of electrons interacting via the long-range Coulomb interaction, these excitations are edge magnetoplasmons. We address the time evolution of localized edge-magnetoplasmon wave packets. On short times the wave packets move along the edge with classical E cross B drift. We show that on longer times the wave packets can have properties similar to those of the Rydberg wave packets that are produced in atoms using short-pulsed lasers. In particular, we show that edge-magnetoplasmon wave packets can exhibit periodic revivals in which a dispersed wave packet reassembles into a localized one. We propose the study of edge-magnetoplasmon wave packets as a tool to investigate dynamical properties of integer and fractional quantum-Hall edges. Various scenarios are discussed for preparing the initial wave packet and for detecting it at a later time. We comment on the importance of magnetoplasmon-phonon coupling and on quantum and thermal fluctuations.Comment: 18 pages, RevTex, 7 figures and 2 tables included, Fig. 5 was originally 3Mbyte and had to be bitmapped for submission to archive; in the process it acquired distracting artifacts, to upload the better version, see http://physics.indiana.edu/~uli/publ/projects.htm

Magnetoresistance of one-dimensional subbands in tunnel-coupled double quantum wires

We study the low-temperature in-plane magnetoresistance of tunnel-coupled quasi-one-dimensional quantum wires. The wires are defined by two pairs of mutually aligned split gates on opposite sides of a < 1 micron thick AlGaAs/GaAs double quantum well heterostructure, allowing independent control of their widths. In the ballistic regime, when both wires are defined and the field is perpendicular to the current, a large resistance peak at ~6 Tesla is observed with a strong gate voltage dependence. The data is consistent with a counting model whereby the number of subbands crossing the Fermi level changes with field due to the formation of an anticrossing in each pair of 1D subbands

Localization corrections to the anomalous Hall effect in a ferromagnet

We calculate the localization corrections to the anomalous Hall conductivity related to the contribution of spin-orbit scattering into the current vertex (side-jump mechanism). We show that in contrast to the ordinary Hall effect, there exists a nonvanishing localization correction to the anomalous Hall resistivity. The correction to the anomalous Hall conductivity vanishes in the case of side-jump mechanism, but is nonzero for the skew scattering. The total correction to the nondiagonal conductivity related to both mechanisms, does not compensate the correction to the diagonal conductivity.Comment: 7 pages with 7 figure