The use of whole genome amplification for genomic evaluation of bovine embryos

The integration of high technologies into livestock production has been actively occurring in the last decade in the countries with a developed animal breeding. First of all, we are talking about reproductive technologies (IVF) and genomic technologies (general genomic evaluation of animal and genomic evaluation of breeding value). Combining reproductive and genomic technologies is a promising approach that allows receiving highquality breeding cattle in the shortest possible time. The basis of the proposed technology for accelerated reproduction of high-value breeding cattle is to obtain information about the genome of the embryo for genomic evaluation. The amount of genetic material that can be obtained for research is extremely limited, as it is necessary to preserve the viability of the embryo. The stage of the whole genome amplification was introduced to obtain a high quality of genetic material in a sufficient quantity. The main purpose of this work is to assess the possibility of using embryo biopsy specimens (bsp) for embryo genotyping using microarray chips and predicting the carrier status of lethal haplotypes at the embryo stage. We obtained 100 cattle embryos, of which 78 biopsy specimens were taken to analysis. For the biopsies obtained we performed the whole genome amplification. The quality and quantity of DNA for all the 78 samples after the whole genome amplification were satisfactory for further genotyping. The quality of the performed genotyping was satisfactory and allowed the assessment of lethal haplotype carriers (determining the sex of the animal and identification of the carrier status for sevenHolsteinlethal haplotypes). We tested 78 embryos. From the genotyping analysis, there was detected one carrier status for three lethal haplotypes, HH0 (Brachyspina), HH5, and HCD. The carrier status of HH0 and HH5 was confirmed by testing the casual mutation using PCR analysis. The carrier status for HCD has not been confirmed by casual mutation analysis. The situation in which an animal is an HCD carrier, but not the carrier of a casual mutation, can be explained. The putative ancestor of the haplotype is the bull HOCAN000000334489 WILLOWHOLME MARK ANTHONY (year of birth is 1975), but a casual mutation associated with this disease has arisen only in his descendant HOCAN000005457798 MAUGHLIN STORM (year of birth is 1991). The results obtained confirm the importance of testing the casual mutation in the animals that are carriers of lethal haplotypes according to the genotyping data

On the electric activity of superfluid systems

The Keldysh's theory of superfluidity of rarefied electron-hole gas is generalized to a case of possible pair polarizability. It was shown that inhomogeneity of the system leads to dipole moment which is proportional to the density gradient. The dipole moment appears also near boundaries of the system. It was determined that quantized vortices in a magnetic field carry a real electric charge. In He II at H=10 T and helium rotation velocity $10^2$ s$^{-1}$ the charge density is about $10^4e$ cm$^{-3}$, where $e$ is the electron charge.Comment: 5 pages V. 2: replaced incorrect g valu

РОЛЬ ГЕНЕТИЧЕСКИХ ФАКТОРОВ В МЕХАНИЗМАХ РАЗВИТИЯ РЕМОДЕЛИРОВАНИЯ КОРОНАРНЫХ АРТЕРИЙ ПОСЛЕ ИМПЛАНТИРОВАНИЯ СТЕНТОВ

In the last 10 years the World has increased significantly the frequency of joint replacement in patients with coronary artery disease. Coronary angioplasty with stenting significantly improve the capacity and effectiveness of the treatment of coronary artery disease. However, an important factor limiting the effectiveness of endovascular treatment of restenosis remains the stented area.The article presents an overview of the most studied gene polymorphisms of hemostasis, inflammation system, the renin-angiotensin system, endothelial nitric oxide synthase, which can play a key role in the development of in-stent restenosis. Research in this area are significant and may help in understanding the mechanisms and risk stratification of restenosis after angioplasty.В последнее десятилетие в мире значительно выросла частота применения эндопротезирования при лечении лиц, страдающих ишемической болезнью сердца (ИБС). Коронарная ангиопластика со стентированием значительно расширила возможности и повысила эффективность лечения ИБС. Тем не менее важным фактором, ограничивающим эффективность эндоваскулярного лечения, остается развитие рестенозастентированного участка. В статье представлен обзор наиболее изученных полиморфизмов генов системы гемостаза, системы воспаления, ренин-ангиотензиновой системы, эндотелиальной синтазы оксида азота, которые могут играть ключевую роль в развитии рестеноза в стенте. Исследования в этом направлении являются существенными и могут помочь в понимании механизмов и стратификации риска развития рестеноза после ангиопластики

Frequency-stabilized semiconductor sources of electromagnetic oscillation in the millimeter range of wavelengths — Part 2: transistorized sources

The paper presents an overview of methods for designing transistorized frequency-stabilized sources of the millimeter range of wavelengths operating under conditions of self-oscillation, frequency multiplication, and synchronization by subharmonic signals. Comparative analysis is performed for these classes of sources realized in diodes and transistors

Power semiconductor pulsers with injection locking for millimeter range of wavelengths

The paper is devoted to design of power pulse semiconductor sources of electromagnetic oscillation in the millimeter range of wavelengths. When dealing with short pulses, most appropriate is application of silicon IMPATT diodes with optimal geometry and doping profile. The optimal area of semiconductor structure of the diode, corresponding to a maximum of power at permissible temperatures, is shown to depend on the pulse condition parameters and on the magnitude of ohmic resistance connected in series. Several methods of combining the diodes’ powers, most effective in the millimeter range of wavelengths, are considered. The paper shows the possibility of creating power pulsers in silicon IMPATT diodes designed for the pulse power of several hundred watts in the millimeter range