Renormalization programme for effective theories

We summarize our latest developments in perturbative treating the effective theories of strong interactions. We discuss the principles of constructing the mathematically correct expressions for the S-matrix elements at a given loop order and briefly review the renormalization procedure. This talk shall provide the philosophical basement as well as serve as an introduction for the material presented at this conference by A. Vereshagin and K. Semenov-Tian-Shansky.Comment: 6 pages, talk given at HSQCD 2004, Russia, May 2004, to be published in Proceeding

Bootstrap and the Parameters of Pion-Nucleon Resonances

In this talk we demonstrate the results of application of the perturbative effective theory formalism developed in recent papers to the calculation of $\pi N$ elastic scattering amplitude. Restrictions on the contributing resonance parameters are obtained and the low energy coefficients are calculated.Comment: 6 pages, talk given at the X. International Conference On Hadron Spectroscopy (HADRON'03), August 31 - September 6, 2003, Aschaffenburg, Germany; to appear in Proceeding

Localizable Effective Theories, Bootstrap and the Parameters of Hadron Resonances

We discuss the basic principles of constructing a meaningful perturbative scheme for effective theory. The main goal of this talk is to explain the approach and to present recent results obtained with the help of the method of Cauchy forms in several complex variables.Comment: 6 pages, Talk given at the X. International Conference On Hadron spectroscopy (HADRON'03), August 31 - September 6, 2003, Aschaffenburg, Germany; to appear in Proceeding

Thermal budget of superconducting digital circuits at sub-kelvin temperatures

Superconducting single-flux-quantum (SFQ) circuits have so far been developed and optimized for operation at or above helium temperatures. The SFQ approach, however, should also provide potentially viable and scalable control and read-out circuits for Josephson-junction qubits and other applications with much lower, milli-kelvin, operating temperatures. This paper analyzes the overheating problem which becomes important in this new temperature range. We suggest a thermal model of the SFQ circuits at sub-kelvin temperatures and present experimental results on overheating of electrons and silicon substrate which support this model. The model establishes quantitative limitations on the dissipated power both for "local" electron overheating in resistors and "global" overheating due to ballistic phonon propagation along the substrate. Possible changes in the thermal design of SFQ circuits in view of the overheating problem are also discussed.Comment: 10 pages, 8 figures, submitted to J. Appl. Phy