Pressure on charged domain walls and additional imprint mechanism in ferroelectrics

The impact of free charges on the local pressure on a charged ferroelectric domain wall produced by an electric field has been analyzed. A general formula for the local pressure on a charged domain wall is derived considering full or partial compensation of bound polarization charges by free charges. It is shown that the compensation can lead to a very strong reduction of the pressure imposed on the wall from the electric field. In some cases this pressure can be governed by small nonlinear effects. It is concluded that the free charge compensation of bound polarization charges can lead to substantial reduction of the domain wall mobility even in the case when the mobility of free charge carriers is high. This mobility reduction gives rise to an additional imprint mechanism which may play essential role in switching properties of ferroelectric materials. The effect of the pressure reduction on the compensated charged domain walls is illustrated for the case of 180-degree ferroelectric domain walls and of 90-degree ferroelectric domain walls with the head-to-head configuration of the spontaneous polarization vectors.Comment: subm. to PRB. This verion is extended by appendi

Suspensions of supracolloidal magnetic polymers: self-assembly properties from computer simulations

We study self-assembly in suspensions of supracolloidal polymer-like structures made of crosslinked magnetic particles. Inspired by self-assembly motifs observed for dipolar hard spheres, we focus on four different topologies of the polymer-like structures: linear chains, rings, Y-shaped and X-shaped polymers. We show how the presence of the crosslinkers, the number of beads in the polymer and the magnetic interparticle interaction affect the structure of the suspension. It turns out that for the same set of parameters, the rings are the least active in assembling larger structures, whereas the system of Y- and especially X-like magnetic polymers tend to form very large loose aggregates

Spin-dependent phenomena and device concepts explored in (Ga,Mn)As

Over the past two decades, the research of (Ga,Mn)As has led to a deeper understanding of relativistic spin-dependent phenomena in magnetic systems. It has also led to discoveries of new effects and demonstrations of unprecedented functionalities of experimental spintronic devices with general applicability to a wide range of materials. In this article we review the basic material properties that make (Ga,Mn)As a favorable test-bed system for spintronics research and discuss contributions of (Ga,Mn)As studies in the general context of the spin-dependent phenomena and device concepts. Special focus is on the spin-orbit coupling induced effects and the reviewed topics include the interaction of spin with electrical current, light, and heat.Comment: 47 pages, 41 figure

The effects of superconductor-stabilizer interfacial resistance on quench of current-carrying coated conductor

We present the results of numerical analysis of a model of normal zone propagation in coated conductors. The main emphasis is on the effects of increased contact resistance between the superconducting film and the stabilizer on the speed of normal zone propagation, the maximum temperature rise inside the normal zone, and the stability margins. We show that with increasing contact resistance the speed of normal zone propagation increases, the maximum temperature inside the normal zone decreases, and stability margins shrink. This may have an overall beneficial effect on quench protection quality of coated conductors. We also briefly discuss the propagation of solitons and development of the temperature modulation along the wire.Comment: To be published in Superconductor Science and Technology. This preprint contains one animated figure (Fig. 6(a)). when asked whether you want to play the content, click "Play". Acrobat Reader (Windows and Mac, but not Linux) will play embedded flash movies. In the printed copy Fig. 6(b) will show the temperature profile at gamma t=15

Spin Tunneling and Phonon-assisted Relaxation in Mn12-acetate

We present a comprehensive theory of the magnetization relaxation in a Mn12-acetate crystal in the high-temperature regime (T>1 K), which is based on phonon-assisted spin tunneling induced by quartic magnetic anisotropy and weak transverse magnetic fields. The overall relaxation rate as function of the longitudinal magnetic field is calculated and shown to agree well with experimental data including all resonance peaks measured so far. The Lorentzian shape of the resonances, which we obtain via a generalized master equation that includes spin tunneling, is also in good agreement with recent data. We derive a general formula for the tunnel splitting energy of these resonances. We show that fourth-order diagonal terms in the Hamiltonian lead to satellite peaks. A derivation of the effective linewidth of a resonance peak is given and shown to agree well with experimental data. In addition, previously unknown spin-phonon coupling constants are calculated explicitly. The values obtained for these constants and for the sound velocity are also in good agreement with recent data. We show that the spin relaxation in Mn12-acetate takes place via several transition paths of comparable weight. These transition paths are expressed in terms of intermediate relaxation times, which are calculated and which can be tested experimentally.Comment: 18 pages, 22 EPS figures, REVTe

Highly asymmetric magnetic domain wall propagation due to coupling to a periodic pinning potential

Magneto-optical microscopy and magnetometry have been used to study 19 magnetization reversal in an ultrathin magnetically soft [Pt/Co]2 ferromagnetic film 20 coupled to an array of magnetically harder [Co/Pt]4 nanodots via a predominantly 21 dipolar interaction across a 3 nm Pt spacer. This interaction generates a spatially 22 periodic pinning potential for domain walls propagating through the continuous 23 magnetic film. When reversing the applied field with respect to the static nanodot 24 array magnetization orientation, strong asymmetries in the wall velocity and switching 25 fields are observed. Asymmetric switching fields mean that the hysteresis of the film is 26 characterized by a large bias field of dipolar origin which is linked to the wall velocity 27 asymmetry. This latter asymmetry, though large at low fields, vanishes at high fields 28 where the domains become round and compact. A field-polarity-controlled transition 29 from dendritic to compact faceted domain structures is also seen at low field and a 30 model is proposed to interpret the transition

On spontaneous scalarization

We study in the physical frame the phenomenon of spontaneous scalarization that occurs in scalar-tensor theories of gravity for compact objects. We discuss the fact that the phenomenon occurs exactly in the regime where the Newtonian analysis indicates it should not. Finally we discuss the way the phenomenon depends on the equation of state used to describe the nuclear matter.Comment: 41 pages, RevTex, 10 ps figures, submitted to Phys. Rev.

Systematic study of magnetic linear dichroism and birefringence in (Ga,Mn)As

Magnetic linear dichroism and birefringence in (Ga,Mn)As epitaxial layers is investigated by measuring the polarization plane rotation of reflected linearly polarized light when magnetization lies in the plane of the sample. We report on the spectral dependence of the rotation and ellipticity angles in a broad energy range of 0.12-2.7 eV for a series of optimized samples covering a wide range on Mn-dopings and Curie temperatures and find a clear blue shift of the dominant peak at energy exceeding the host material band gap. These results are discussed in the general context of the GaAs host band structure and also within the framework of the k.p and mean-field kinetic-exchange model of the (Ga,Mn)As band structure. We find a semi-quantitative agreement between experiment and theory and discuss the role of disorder-induced non-direct transitions on magneto-optical properties of (Ga,Mn)As.Comment: 18 page