Electron Transport in n-Type InSe van der Waals Crystals with Co Impurities

Intercalation and doping are promising routes to tune properties of van der Waals (vdW) semiconductors and pave the way for their applications in digital electronics beyond Moore’s law, sensors and spintronics. The indium selenide (InSe) vdW crystal shows great promise for use in next-generation semiconductor technologies. For these applications to be realized, the effects of impurities on properties of InSe must be understood. Here, we present a comparative experimental study of electron transport in n-type InSe semiconductor doped and electrochemically intercalated with magnetic cobalt (Co) impurities. It is shown that the presence of Co decreases the free electron density, the Hall mobility along layers and the conductivity anisotropy σ⊥C/σ‖C. Furthermore, this leads to a change of the behavior of σ⊥C(T) dependence from a metallic one in pristine samples to a semiconducting one in samples with Co. We also demonstrate that the interaction of electrons with space-charge regions is an effective scattering mechanism, which should be taken into account in doped and intercalated crystals. The present work is important for the basic physics knowledge of the effect of Co impurities on physical properties of InSe, which is needed to tailor the parameters of this semiconductor for applications in electronics and spintronics

Charge Carrier Transport in Van Der Waals Semiconductor InSe Intercalated with RbNO3 Probed by Direct Current Methods

Layered van der Waals (vdW) semiconductors show great promise to overcome limitations imposed by traditional semiconductor materials. The synergistic combination of vdW semiconductors with other functional materials can offer novel working principles and device concepts for future nano- and optoelectronics. Herein, we investigate the influence of the intercalation of semiconducting n-type InSe vdW crystals with ferroelectric rubidium nitrate (RbNO3) on the transport of charge carriers along and across the layers. The apparent maxima in the temperature dependences of the Hall coefficient are explained in the framework of a model that predicts, along with three-dimensional carriers, the existence of two-dimensional ones contributing only to the conductivity along the layers. The revealed increase of the conductivity anisotropy and its activation variation with temperature, which is mainly due to a decrease of the conductivity across the layers, confirm a two-dimensionalization of electron gas in n-InSe after insertion of the ferroelectric. From the numerical analysis, we determined the densities of carriers of both types, concentrations of donors and acceptors, as well as the value of the interlayer barrier

The influence of transition metal solutes on dislocation core structure and values of Peierls stress and barrier in tungsten

Several transition metals were examined to evaluate their potential for improving the ductility of tungsten. The dislocation core structure and Peierls stress and barrier of $1/2$ screw dislocations in binary tungsten-transition metal alloys (W$_{1-x}$TM$_{x}$) were investigated using first principles electronic structure calculations. The periodic quadrupole approach was applied to model the structure of $1/2$ dislocation. Alloying with transition metals was modeled using the virtual crystal approximation and the applicability of this approach was assessed by calculating the equilibrium lattice parameter and elastic constants of the tungsten alloys. Reasonable agreement was obtained with experimental data and with results obtained from the conventional supercell approach. Increasing the concentration of a transition metal from the VIIIA group, i.e. the elements in columns headed by Fe, Co and Ni, leads to reduction of the $C^\prime$ elastic constant and increase of elastic anisotropy A=$C_{44}/C^\prime$. Alloying W with a group VIIIA transition metal changes the structure of the dislocation core from symmetric to asymmetric, similar to results obtained for W$_{1-x}$Re$_{x}$ alloys in the earlier work of Romaner {\it et al} (Phys. Rev. Lett. 104, 195503 (2010))\comments{\cite{WRECORE}}. In addition to a change in the core symmetry, the values of the Peierls stress and barrier are reduced. The latter effect could lead to increased ductility in a tungsten-based alloy\comments{\cite{WRECORE}}. Our results demonstrate that alloying with any of the transition metals from the VIIIA group should have similar effect as alloying with Re.Comment: 12 pages, 8 figures, 3 table

Complexity of computations on register maschines with counters: abstract of thesis for degree of candidate of physical and mathematical sciences: 01.01.09 — discrete mathematics and mathematical

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