445 research outputs found
Comment on: Weak Anisotropy and Disorder Dependence of the In-Plane Magnetoresistance in High-Mobility (100) Si Inversion Layers
Comment on: Weak Anisotropy and Disorder Dependence of the In-Plane
Magnetoresistance in High-Mobility (100) Si Inversion LayersComment: 1 page, submitted to PR
Direct measurements of the spin and the cyclotron gaps in a 2D electron system in silicon
Using magnetocapacitance data in tilted magnetic fields, we directly
determine the chemical potential jump in a strongly correlated two-dimensional
electron system in silicon when the filling factor traverses the spin and the
cyclotron gaps. The data yield an effective g-factor that is close to its value
in bulk silicon and does not depend on filling factor. The cyclotron splitting
corresponds to the effective mass that is strongly enhanced at low electron
densities
Comment on "Interaction Effects in Conductivity of Si Inversion Layers at Intermediate Temperatures"
We show that the comparison between theory and experiment, performed by
Pudalov et al. in PRL 91, 126403 (2003), is not valid.Comment: comment on PRL 91, 126403 (2003) by Pudalov et a
Opening an energy gap in an electron double layer system at integer filling factor in a tilted magnetic field
We employ magnetocapacitance measurements to study the spectrum of a double
layer system with gate-voltage-tuned electron density distributions in tilted
magnetic fields. For the dissipative state in normal magnetic fields at filling
factor and 4, a parallel magnetic field component is found to give rise
to opening a gap at the Fermi level. We account for the effect in terms of
parallel-field-caused orthogonality breaking of the Landau wave functions with
different quantum numbers for two subbands.Comment: 4 pages, 4 figures included, to appear in JETP Letter
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