923 research outputs found

    Bloch inductance in small-capacitance Josephson junctions

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    We show that the electrical impedance of a small-capacitance Josephson junction includes besides the capacitive term −i/ωCB-i/\omega C_B also an inductive term iωLBi\omega L_B. Similar to the known Bloch capacitance CB(q)C_B(q), the Bloch inductance LB(q)L_B(q) also depends periodically on the quasicharge qq, and its maximum value achieved at q=e(mod2e)q=e (\textrm{mod} 2e) always exceeds the value of the Josephson inductance of this junction LJ(ϕ)L_J(\phi) at fixed ϕ=0\phi=0. The effect of the Bloch inductance on the dynamics of a single junction and a one-dimensional array is described.Comment: 5 pages incl. 3 fig

    A hybrid superconductor-normal metal electron trap as a photon detector

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    A single-electron trap built with two Superconductor (S) - Insulator (I) - Normal (N) metal tunnel junctions and coupled to a readout SINIS-type single-electron transistor A (SET A) was studied in a photon detection regime. As a source of photon irradiation, we used an operating second SINIS-type SET B positioned in the vicinity of the trap. In the experiment, the average hold time of the trap was found to be critically dependent on the voltage across SET B. Starting in a certain voltage range, a photon-assisted electron escape was observed at a rate roughly proportional to the emission rate of the photons with energies exceeding the superconducting gap of S-electrodes in the trap. The discussed mechanism of photon emission and detection is of interest for low-temperature noise spectrometry and it can be of relevance for the ampere standard based on hybrid SINIS turnstiles.Comment: submitted, 3 pages, 3 figure

    Cooper pair cotunneling in single charge transistors with dissipative electromagnetic environment

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    We observed current-voltage characteristics of superconducting single charge transistors with on-chip resistors of R about R_Q = h/4e^2 = 6.45 kOhm, which are explained in terms of Cooper-pair cotunneling. Both the effective strength of Josephson coupling and the cotunneling current are modulated by the gate-induced charge on the transistor island. For increasing values of the resistance R we found the Cooper pair current at small transport voltages to be dramatically suppressed.Comment: 4 pages and 2 figure

    Josephson tunnel junctions with nonlinear damping for RSFQ-qubit circuit applications

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    We demonstrate that shunting of Superconductor-Insulator-Superconductor Josephson junctions by Superconductor-Insulator-Normal metal (S-I-N) structures having pronounced non-linear I-V characteristics can remarkably modify the Josephson dynamics. In the regime of Josephson generation the phase behaves as an overdamped coordinate, while in the superconducting state the damping and current noise are strikingly small, that is vitally important for application of such junctions for readout and control of Josephson qubits. Superconducting Nb/AlOx{_x}/Nb junction shunted by Nb/AlOx{_x}/AuPd junction of S-I-N type was fabricated and, in agreement with our model, exhibited non-hysteretic I-V characteristics at temperatures down to at least 1.4 K.Comment: 4 pages incl. 3 figure

    Aluminum Single Electron Transistors with Islands Isolated from a Substrate

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    The low-frequency noise figures of single-electron transistors (electrometers) of traditional planar and new stacked geometry were compared. We observed a correlation between the charge noise and the contact area of the transistor island with a dielectric substrate in the set of Al transistors located on the same chip and having almost similar electric parameters. We have found that the smaller the contact area the lower the noise level of the transistor. The lowest noise value 8*10E-6 e/sqrt(Hz) at f = 10 Hz. has been measured in a stacked transistor with an island which was completely isolated from a substrate. Our measurements have unambiguously indicated that the dominant source of the background charge fluctuations is associated with a dielectric substrateComment: Review paper, latex, 10 pages, 7 figures, to be publ. in JLTP, 2000; Proceeding of "Electron Transport in Mesoscopic Systems", August 12-15, 1999 Geteborg, Sweden, http://fy.chalmers.se/meso_satellite/index.html See also LT22 manuscript: http://lt22.hut.fi/cgi/view?id=S1113
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