4,890 research outputs found

    Optical properties of (In,Ga)As capped InAs quantum dots grown on [11k] substrates

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    Using three-dimensional k.p calculation including strain and piezoelectricity, we showed that the size of the quantum dot (QD) in the growth direction determines the influence of the (In,Ga)As capping layer on the optical properties of [11k] grown InAs QDs, where k=1,2,3. For flat dots, increase of In concentration in the capping layer leads to a decrease of the transition energy, as is the case of [001] grown QDs, whereas for large dots an increase of the In concentration in the capping layer is followed by an increase of the transition energy up to a critical concentration of In, after which the optical transition energy starts to decrease

    Quantum dot size dependent influence of the substrate orientation on the electronic and optical properties of InAs/GaAs quantum dots

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    Using 3D k.p calculation including strain and piezoelectricity we predict variation of electronic and optical properties of InAs/GaAs quantum dots (QDs) with the substrate orientation. The QD transition energies are obtained for high index substrates [11k], where k = 1,2,3 and are compared with [001]. We find that the QD size in the growth direction determines the degree of influence of the substrate orientation: the flatter the dots, the larger the difference from the reference [001] case.Comment: Submitted to Appl. Phys. Let

    The interaction between a superconducting vortex and an out-of-plane magnetized ferromagnetic disk: influence of the magnet geometry

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    The interaction between a superconducting vortex in a type II superconducting film (SC) and a ferromagnet (FM) with out-of-plane magnetization is investigated theoretically within the London approximation. The dependence of the interaction energy on the FM-vortex distance, film thickness and different geometries of the magnetic structures: disk, annulus(ring), square and triangle are calculated. Analytic expressions and vectorplots of the current induced in the SC due to the presence of the FM are presented. For a FM disk with a cavity, we show that different local minima for the vortex position are possible, enabling the system to be suitable to act as a qubit. For FMs with sharp edges, like e.g. for squares and triangles, the vortex prefers to enter its equilibrium position along the corners of the magnet.Comment: Preprint, 10 pages, 10 figures, submitted to Phys. Rev.

    Field-enhanced critical parameters in magnetically nanostructured superconductors

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    Within the phenomenological Ginzburg-Landau theory, we demonstrate the enhancement of superconductivity in a superconducting film, when nanostructured by a lattice of magnetic particles. Arrays of out-of-plane magnetized dots (MDs) extend the critical magnetic field and critical current the sample can sustain, due to the interaction of the vortex-antivortex pairs and surrounding supercurrents induced by the dots and the external flux lines. Depending on the stability of the vortex-antivortex lattice, a peak in the Hext-T boundary is found for applied integer and rational matching fields, which agrees with recent experiments [Lange et al., Phys. Rev. Lett. 90, 197006 (2003)]. Due to compensation of MDs- and Hext-induced currents, we predict the field-shifted jc-Hext characteristics, as was actually realized in previous experiment but not commented on [Morgan and Ketterson, Phys. Rev. Lett. 80, 3614 (1998)].Comment: 8 pages, 5 figures, to appear in Europhysics Letter

    Spin-engineered quantum dots

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    Spatially nonhomogeneously spin polarized nuclei are proposed as a new mechanism to monitor electron states in a nanostructure, or as a means to createn and, if necessary, reshape such nanostructures in the course of the experiment. We found that a polarization of nulear spins may lift the spin polarization of the electron states in a nanostructure and, if sufficiently strong, leads to a polarization of the electron spins. Polarized nuclear spins may form an energy landscape capable of binding electrons with energy up to several meV and the localization radius > > 100\AA.Comment: 9 pages, 1 figure, submitted to Physica E, Augist 31, 200
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