A Relevance of Serological Tests in Diagnosis of Early Congenital Syphilis: A Case Report

Abstract Congenital syphilis is acquired by an infant from an infected mother by transplacental transmission of Treponema pallidum during pregnancy or possibly at birth from contact with maternal lesions. Early form of congenital syphilis is when the clinical manifestations occur before two years of age and late congenital syphilis is when manifestations occur among untreated patients after two years of age. Serological tests hold a mainstay in syphilis diagnosis. Nontreponemal tests are commonly used as a screening test for syphilis, which may turn negative after full course of treatment, while treponemal tests are diagnostic and remain positive for life in low titre even after treatment. Here, we present a case of early congenital syphilis and its confirmation with serological tests with emphasis on the relevance of these tests in confirmation of diagnosis

In2Se3 Visible/Near-IR Photodetector With Observation of Band-Edge in Spectral Response

We report on the demonstration of visible/near-IR high-performance photodetector based on exfoliated beta-Indium selenide (In2Se3) on sapphire with a clear signature of band edge in spectral responsivity at a wavelength of similar to 850-900 nm. Room temperature photoluminescence (PL) measurements also indicated a peak at similar to 900 nm confirming the band-edge. Devices with inter-digitated metal-semiconductor-metal (MSM) geometry exhibited a responsivity of 3.8 A/W (normalized to device area). A low dark current of 0.80 nA and a photo to dark current ratio of similar to 52 were measured when illuminated with 650 nm A specific detectivity of 1 x 10(10) cm Hz(0.5) W-1 at 650 nm and 6 x 10(8) cm Hz(0.5) W-1 at the band-edge of 900 nm were estimated. These results indicate the promise of beta-(In2Se3) for visible/near-IR detector applications

Gain mechanism and carrier transport in high responsivity AlGaN-based solar blind metal semiconductor metal photodetectors

We report on the highest responsivity for III-nitride Metal Semiconductor Metal solar-blind photodetectors on sapphire. Devices on unintentionally doped AlGaN epilayers grown by Metal Organic Chemical Vapor Deposition exhibited sharp absorption cut-off in the range of 245-290 nm. Very high responsivity >5 A/W at 10V bias was achieved with visible rejection exceeding three orders of magnitude for front illumination. Compared to the responsivity values reported in the literature for state-of-the-art solar-blind photodetectors, this work presents the highest values of responsivity at a given bias and up to sub-250 nm detection threshold. The high responsivity is attributed to an internal gain mechanism operating on these devices. The reverse-bias leakage current across these samples was found to be dominated by thermionic field emission at low biases and Poole-Frenkel emission from a deep trap level (0.7 eV from the conduction band-edge for Al0.50Ga0.50N) at high biases. Published by AIP Publishing

Integration of multi-layered materials with wide bandgap semiconductors for multi-spectral photodetectors: case for MoS2/GaN and beta-In2Se3/GaN

We report on the demonstration of UV/visible and UV/near-IR photodetectors of high spectral responsivity (SR) in a non-conventional heterojunction, realized by combining multi-layered materials with wide band gap Gallium Nitride (GaN). Multi-layer MoS2 and beta-In2Se3 flakes were exfoliated separately on epitaxial GaN-on-sapphire, followed by fabrication of photodetectors in a lateral inter-digitated metal semiconductor metal geometry with Ti/Au contacts. Devices exhibited distinct steps in SR graph at 365 nm with responsivity value of 127 AW(-1) and at similar to 685 nm with responsivity value of 33 AW(-1) for MoS2/GaN heterostructure. Whereas, similar steps exhibited at 365 nm with responsivity value of 1.6 AW(-1) and at similar to 850 nm with responsivity value of 0.03 AW-1 in case of beta-In2Se3/GaN heterostructure. The wavelength dependent I-V characteristics showed photo-to-dark current ratio of similar to 30 at 685 nm in case of MoS2/GaN heterostructure and ratio of similar to 2 at 850 nm for beta-In2Se3/GaN heterostructure. The reasons which limit the performance of the devices were also investigated using transient analysis and power dependent responsivity analysis. In summary, current work paves the way for futuristic layered-materials/3D heterostructure devices

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Not AvailableNBS-encoding genes play a critical role in the plant defense system. Wild relatives of crop plants are rich reservoirs of plant defense genes. Here, we performed a stringent genome-wide identification of NBS-encoding genes in three cultivated and eight wild Oryza species, representing three different genomes (AA, BB, and FF) from four continents. A total of 2688 NBS-encoding genes were identified from 11 Oryza genomes. All the three progenitor species of cultivated rice, namely O. barthii, O. rufipogon, and O. nivara, were the richest reservoir of NBS-encoding genes (214, 313, and 307 respectively). Interestingly, the two Asian cultivated species showed a contrasting pattern in the number of NBS-encoding genes. While indica subspecies maintained nearly equal number of NBS genes as its progenitor (309 and 313), the japonica subspecies had retained only two third in the course of evolution (213 and 307). Other major sources for NBS-encoding genes could be (i) O. longistaminata since it had the highest proportion of NBS-encoding genes and (ii) O. glumaepatula as it clustered distinctly away from the rest of the AA genome species. The present study thus revealed that NBS-encoding genes can be exploited from the primary gene pool for disease resistance breeding in rice.Not Availabl

Chloroplast Genome Sequence of Clusterbean (Cyamopsis tetragonoloba L.): Genome Structure and Comparative Analysis

Clusterbean (Cyamopsis tetragonoloba L.), also known as guar, belongs to the family Leguminosae, and is an annual herbaceous legume. Guar is the main source of galactomannan for gas mining industries. In the present study, the draft chloroplast genome of clusterbean was generated and compared to some of the previously reported legume chloroplast genomes. The chloroplast genome of clusterbean is 152,530 bp in length, with a quadripartite structure consisting of large single copy (LSC) and small single copy (SSC) of 83,025 bp and 17,879 bp in size, respectively, and a pair of inverted repeats (IRs) of 25,790 bp in size. The chloroplast genome contains 114 unique genes, which includes 78 protein coding genes, 30 tRNAs, 4 rRNAs genes, and 2 pseudogenes. It also harbors a 50 kb inversion, typical of the Leguminosae family. The IR region of the clusterbean chloroplast genome has undergone an expansion, and hence, the whole rps19 gene is included in the IR, as compared to other legume plastid genomes. A total of 220 simple sequence repeats (SSRs) were detected in the clusterbean plastid genome. The analysis of the clusterbean plastid genome will provide useful insights for evolutionary, molecular and genetic engineering studies