High-temperature characteristics of zone-melting recrystallized silicon-on-insulator MOSFETs

Abstract. The characteristics of enhancement-mode MOS transistors fabricated on zone-melting recrystallized (ZMR) silicon-on-insulator (SOI) films were systematically experimentally investigated in the temperature range 25300°C. The main temperature-dependent parameters (the threshold voltage, the channel mobility, subthreshold slope, off-state leakage currents) of ZMR SOI MOSFETs are described and compared with both theory and SIMOX devices. It is shown that high carrier mobilities and low off-state leakage currents can be obtained in thin-film ZMR SOI MOSFETs at elevated temperatures. At T = 300°C, far beyond the operating range of bulk silicon devices, the off-state leakage current in ZMR SOI MOSFETs with a 0.15 µm-thick silicon film was only 0.5 nA/µm (for V D = 3 V), that is 3 4 orders of magnitude lower than typical values in bulk Si devices. The presented results demonstrate that CMOS devices fabricated on sufficiently thin ZMR SOI films are well suited for high-temperature applications