Direct application of plasmid DNA containing type I interferon transgenes to vaginal mucosa inhibits HSV-2 mediated mortality

The application of naked DNA containing type I interferon (IFN) transgenes is a promising potential therapeutic approach for controlling chronic viral infections. Herein, we detail the application of this approach that has been extensively used to restrain ocular HSV-1 infection, for antagonizing vaginal HSV-2 infection. We show that application of IFN-α1, -α5, and –β transgenes to vaginal mouse lumen 24 hours prior to HSV-2 infection reduces HSV-2 mediated mortality by 2.5 to 3-fold. However, other type I IFN transgenes (IFN- α4, -α5, -α6, and –α9) are non effectual against HSV-2. We further show that the efficacy of IFN-α1 transgene treatment is independent of CD4+ T lymphocytes. However, in mice depleted of CD8+ T lymphocytes, the ability of IFN-α1 transgene treatment to antagonize HSV-2 was lost

Excitonic signature in gain and carrier induced change of refractive index spectra of (In,Al)GaN quantum well lasers

The exciton is observed in (In,Al)GaN laser diodes as resonance in the optical gain spectra and in the spectra of the carrier induced change of the refractive index. The observed instability of the exciton with respect to the free electron-hole plasma with increasing carrier densities is accompanied by a blueshift of the exciton resonance due to the quantum confined Stark shift. The experiments confirm central points of many-body simulations of InGaN/GaN quantum wells. The exciton becomes unstable near threshold and so lasing occurs from the electron–hole plasma

Gain spectra and current-induced change of refractice index in (In/Al)GaN diode lasers

Adapting the Hakki-Paoli method for blue laser diodes we measure gain spectra for (In/Al)GaN on SiC substrate laser diodes in the low carrier density regime. From the measured longitudinal mode spacing we calculate the effective refractive index and can exclude a mode spacing anomaly. We demonstrate that the substrate has a considerable influence on the modal gain

Optical gain, carrier-induced phase shift, and linewidth enhancement factor in InGaN quantum well lasers

Adapting the Hakki Paoli method to group III nitrides, we measure gain, differential gain, carrier-induced change of refractive index, carrier-induced phase shift, and the antiguiding factor. Our measurements also cover the low-carrier-density regime, in which spontaneous and piezoelectric fields and Coulomb interaction are only partially screened. This regime is most interesting as a comparison with existing theoretical simulations, including many-body effects