100 NM Thick Aluminum Nitrade Based Piezoelectric Nano Switches Exhibiting 1 MV Threshold Voltage via Body-Biasing

This paper reports on the first demonstration of aluminum nitride (AIN) piezoelectric logic switches that were fabricated with ultra-thin (100nm) AIN films and exhibit a 1 mV threshold voltage via the body-biasing scheme. The application of a relatively low (\u3c 6 V) fixed potential to the body terminal of a 4-terminal switch has been cycled to \u3e 109 cycles and, although the contact resistance was found to be high (~ 1 MΩ), the nano-films have functioned throughout to show high piezoelectric nano-film reliability

Piezoelectric aluminum nitride nanoelectromechanical actuators

This letter reports the implementation of ultrathin (100 nm) aluminum nitride (AlN) piezoelectric layers for the fabrication of vertically deflecting nanoactuators. The films exhibit an average piezoelectric coefficient (d31~−1.9 pC/N), which is comparable to its microscale counterpart. This allows vertical deflections as large as 40 nm from 18 µm long and 350 nm thick multilayer cantilever bimorph beams with 2 V actuation. Furthermore, in-plane stress and stress gradients have been simultaneously controlled. The films exhibit leakage currents lower than 2 nA/cm2 at 1 V, and have an average relative dielectric constant of approximately 9.2 (as in thicker films). These material characteristics and actuation results make the AlN nanofilms ideal candidates for the realization of nanoelectromechanical switches for low power logic applications

Ultra Thin AlN Piezoelectric Nano-Actuators

This paper reports the first implementation of ultra thin (100 nm) Aluminum Nitride (AlN) piezoelectric layers for the fabrication of vertically deflecting nano-actuators. An average piezoelectric coefficient (d31~ 1.9 pC/N) that is comparable to its microscale counterpart has been demonstrated in nanoscale thin AlN films. Vertical deflections as large as 40 nm have been obtained in 18 μm long and 350 nm thick cantilever beams under bimorph actuation with 2 V. Furthermore, in-plane stress and stress gradients have been simultaneously controlled. Leakage current lower than 2 nA/cm2 at 1 V has been recorded and an average relative dielectric constant of approximately 9.2 (as in thicker films) has been measured. These material characteristics and preliminary actuation results make the AlN nano-films ideal candidates for the realization of nanoelectromechanical switches for low power logic applications

ABSTRACT Multi-Module Vulnerability Analysis of Web-based Applications

In recent years, web applications have become tremendously popular, and nowadays they are routinely used in security-critical environments, such as medical, financial, and military systems. As the use of web applications for critical services has increased, the number and sophistication of attacks against these applications have grown as well. Current approaches to securing web applications focus either on detecting and blocking web-based attacks using application-level firewalls, or on using vulnerability analysis techniques to identify security problems before deployment. The vulnerability analysis of web applications is made difficult by a number of factors, such as the use of scripting languages, the structuring of the application logic into separate pages and code modules, and the interaction with back-end databases. So far, approaches to web application vulnerability analysis have focused on single application modules to identify insecure uses of informatio

Hafnium Nitride as High Acoustic Impedance Material for Fully Insulating Acoustic Reflectors

Non-conductive high acoustic impedance materials could provide a simpler solution to some of the challenges that solidly mounted resonators display in biosensing and telecom applications. Hafnium nitride is used as a high acoustic impedance material in fully insulating acoustic reflectors. The HfN thin films display a density close to 11000 kg/m 3 , which is 80% of the nominal bulk value (13800 kg/m 3 , and a longitudinal acoustic velocity of 5400 m/s. These values result in a ZA of 59.4 Mrayl, which is considerably higher than that obtained for the most used insulating high acoustic impedance materials (AIN and Ta 2 O 5 ., 36.3 Mrayl and 38.9 Mrayl respectively) and very close to that of Mo sputtered films (64.7 Mrayl). A five-layer acoustic reflector centered at 3.5 GHz made of HfN/SiO 2 is quantitatively compared with a standard Mo/SiO 2 reflector. The devices on the HfN/SiO 2 show a quality factor Q of 750 at the resonant frequency, higher than those fabricated on the Mo/SiO 2 reflector that displayed a Q value of 300