3 research outputs found
Bulk Fermi surface and electronic properties of CuBiSe
The electronic properties of CuBiSe have been
investigated using Shubnikov-de Haas and optical reflectance measurements.
Quantum oscillations reveal a bulk, three-dimensional Fermi surface with
anisotropy 2 and a modest increase in
free-carrier concentration and in scattering rate with respect to the undoped
BiSe, also confirmed by reflectivity data. The effective mass is
almost identical to that of BiSe. Optical conductivity reveals a
strong enhancement of the bound impurity bands with Cu addition, suggesting
that a significant number of Cu atoms enter the interstitial sites between Bi
and Se layers or may even substitute for Bi. This conclusion is also supported
by X-ray diffraction measurements, where a significant increase of microstrain
was found in CuBiSe, compared to BiSe.Comment: Accepted to Phys. Rev B (R