Yキャク フンゴウブ キョウサク オ ガッペイ シタ チョウ コウレイシャ イ ゼンテキ ノ イチレイ

An 88-year-old male patient was referred to our hospital after being diagnosed with gastric cancer during extensive investigations for anemia. The patient underwent total gastrectomy followed by Roux-en Y reconstruction. An esophagus jejunum anastomosis was performed using a Curbed-Shaft Detachable Head Circular Stapler （25 mm）（CDH25）. An anastomosis of the jejunum was performed approximately 40 cm distal to the esophagus jejunum anastomosis using a Straight Shaft Detachable Head Circular Stapler（21 mm）（SDH21）. A seromuscular suture was applied to each anastomotic site. The patient started oral intake on Day 8 after the operation, and was transferred to the urology department on Day 22 for the treatment of renal cancer. Approximately 2 weeks after the transfer, the patient developed fever above 38℃. CT revealed marked enlargement of the duodenum, suggesting stenosis at the Y anastomotic site. The stenosis was successfully treated by endoscopic balloon dilatation without performing. Here, we report a case with favorable outcome

チョウコウレイシャ 100サイ イジョウ 3レイ ニ タイスル シュジュツ ケイケン

Aging in Japan has been gradually progressing year by year and it is considered there would be more opportunities to execute operation for very elderly people in future. We report this article because we have experienced operations for female aged over１００years old in three cases. The case １is for female at age of１０１. We executed right hemicolectomy and small bowel fistula expansion for ascending colon cancer ileus with coated perforation. Although we recognized subdelirium, the postoperative course showed a good progress and she was transferred to another hospital１７days after the operation. The case２is for female at age of１０１. We executed an elective hernial radical operation after manual correction for left inguinal hernia incarceration. We did not recognize any complication other than subdelirium and she was discharged from the hospital９days after the operation. The case３is for female at age of１０１. We executed right half colon ablation and complication ablation of small intestine for transverse colon cancer. The postoperative course showed no complication and she was lightheartedly discharged from the hospital１５days after the operation. Although３５cases of the operation for very elderly people aged over１００years old including the above-described operations were reported in Japan, there were only３cases in where the patients were actually dead with emergency operation ; therefore, it is considered that the execution of necessary operation should not be hesitated only by patient’s age

A counter-based read circuit tolerant to process variation for low-voltage operating STT-MRAM

The capacity of embedded memory on LSIs has kept increasing. It is important to reduce the leakage power of embedded memory for low-power LSIs. In fact, the ITRS predicts that the leakage power in embedded memory will account for 40% of all power consumption by 2024 [1]. A spin transfer torque magneto-resistance random access memory (STT-MRAM) is promising for use as non-volatile memory to reduce the leakage power. It is useful because it can function at low voltages and has a lifetime of over 1016 write cycles [2]. In addition, the STT-MRAM technology has a smaller bit cell than an SRAM. Making the STT-MRAM is suitable for use in high-density products [3–7]. The STT-MRAM uses magnetic tunnel junction (MTJ). The MTJ has two states: a parallel state and an anti-parallel state. These states mean that the magnetization direction of the MTJ’s layers are the same or different. The directions pair determines the MTJ’s magneto- resistance value. The states of MTJ can be changed by the current flowing. The MTJ resistance becomes low in the parallel state and high in the anti-parallel state. The MTJ potentially operates at less than 0.4 V [8]. In other hands, it is difficult to design peripheral circuitry for an STT-MRAM array at such a low voltage. In this paper, we propose a counter-based read circuit that functions at 0.4 V, which is tolerant of process variation and temperature fluctuation

A counter-based read circuit tolerant to process variation for low-voltage operating STT-MRAM

The capacity of embedded memory on LSIs has kept increasing. It is important to reduce the leakage power of embedded memory for low-power LSIs. In fact, the ITRS predicts that the leakage power in embedded memory will account for 40% of all power consumption by 2024 [1]. A spin transfer torque magneto-resistance random access memory (STT-MRAM) is promising for use as non-volatile memory to reduce the leakage power. It is useful because it can function at low voltages and has a lifetime of over 1016 write cycles [2]. In addition, the STT-MRAM technology has a smaller bit cell than an SRAM. Making the STT-MRAM is suitable for use in high-density products [3–7]. The STT-MRAM uses magnetic tunnel junction (MTJ). The MTJ has two states: a parallel state and an anti-parallel state. These states mean that the magnetization direction of the MTJ’s layers are the same or different. The directions pair determines the MTJ’s magneto- resistance value. The states of MTJ can be changed by the current flowing. The MTJ resistance becomes low in the parallel state and high in the anti-parallel state. The MTJ potentially operates at less than 0.4 V [8]. In other hands, it is difficult to design peripheral circuitry for an STT-MRAM array at such a low voltage. In this paper, we propose a counter-based read circuit that functions at 0.4 V, which is tolerant of process variation and temperature fluctuation