81 research outputs found

    Electronic response and bandstructure modulation of carbon nanotubes in a transverse electrical field

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    The electronic properties of carbon nanotubes in a uniform transverse field are investigated within a single orbital tight-binding model. For doped nanotubes, the dielectric function is found to depend not only on symmetry of the tube, but also on radius and Fermi level position. Bandgap opening/closing is predicted for zigzag tubes, while it is found that armchair tubes always remain metallic, which is explained by the symmetry in their configuration. The bandstructures for both types are considerably modified when the field strength is large enough to mix neighboring subbands.Comment: Accepted for publication in Nanoletters, 8 pages, 3 figure

    Metal-Semiconductor Transition in Armchair Carbon Nanotubes by Symmetry Breaking

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    The electronic band structure of armchair carbon nanotubes may be considerably modified by potentials with angular dependence. Different angular modes V_q ~ cos(q*theta) have been studied within a tight-binding scheme. Using symmetry arguments, we demonstrate a bandgap opening in these metallic nanotubes when certain selection rules are satisfied for both potential and nanotube structure. We estimate the bandgap opening as a function of both the external potential strength and the nanotube radius and suggest an effective mechanism of metal-semiconductor transition by combination of different forms of perturbations.Comment: 3 pages, 3 figures, published on AP

    A Backscattering Model Incorporating the Effective Carrier Temperature in Nano MOSFET

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    In this work we propose a channel backscattering model in which increased carrier temperature at the top of the potential energy barrier in the channel is taken into account. This model represents an extension of a previous model by the same authors which highlighted the importance of considering the partially ballistic transport between the source contact and the top of the potential energy barrier in the channel. The increase of carrier temperature is precisely due to energy dissipation between the source contact and the top of the barrier caused by the high saturation current. To support our discussion, accurate 2D full band Monte Carlo device simulations with quantum correction have been performed in double gate nMOSFETs for different geometries (gate length down to 10 nm), biases and lattice temperatures. Including the effective carrier temperature is especially important to properly treat the high inversion regime, where previous backscattering models usually fail

    A Universal Framework for Generalized Run Time Assurance with JAX Automatic Differentiation

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    With the rise of increasingly complex autonomous systems powered by black box AI models, there is a growing need for Run Time Assurance (RTA) systems that provide online safety filtering to untrusted primary controller output. Currently, research in RTA tends to be ad hoc and inflexible, diminishing collaboration and the pace of innovation. The Safe Autonomy Run Time Assurance Framework presented in this paper provides a standardized interface for RTA modules and a set of universal implementations of constraint-based RTA capable of providing safety assurance given arbitrary dynamical systems and constraints. Built around JAX, this framework leverages automatic differentiation to populate advanced optimization based RTA methods minimizing user effort and error. To validate the feasibility of this framework, a simulation of a multi-agent spacecraft inspection problem is shown with safety constraints on position and velocity

    Metal-Semiconductor Transition and Fermi Velocity Renormalization in Metallic Carbon Nanotubes

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    Angular perturbations modify the band structure of armchair (and other metallic) carbon nanotubes by breaking the tube symmetry and may induce a metal-semiconductor transition when certain selection rules are satisfied. The symmetry requirements apply for both the nanotube and the perturbation potential, as studied within a nonorthogonal π\pi-orbital tight-binding method. Perturbations of two categories are considered: an on-site electrostatic potential and a lattice deformation which changes the off-site hopping integrals. Armchair nanotubes are proved to be robust against the metal-semiconductor transition in second-order perturbation theory due to their high symmetry, but can develop a nonzero gap by extending the perturbation series to higher orders or by combining potentials of different types. An assumption of orthogonality between π\pi orbitals is shown to lead to an accidental electron-hole symmetry and extra selection rules that are weakly broken in the nonorthogonal theory. These results are further generalized to metallic nanotubes of arbitrary chirality.Comment: Submitted to Phys. Rev. B, 23 pages, 4 figure

    Simulation of a long term memory device with a full bandstructure Monte Carlo approach

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    Simulations of charging characteristics of a long term memory device, based on a floating gate structure, are presented. The analysis requires the inclusion of hot electron effects and a detailed account of the semiconductor bandstructure, because device operation is based on the injection of electrons into the gate oxide high above the silicon conduction band edge. We have developed a Monte Carlo simulator based on a full bandstructure approach which accurately accounts for the high energy tail of the electron distribution function. For practical simulation of the prototype structure, with 3.0-pm source-drain separation, the simulator is used as a post-processor on the potential profile obtained from a PISCES IIB drift-diffusion solution. The computations are in quantitative agreement with experimental results for the gate injection current, measured at fixed drain and gate biases

    Carcinogenesis and Metastasis in Liver: Cell Physiological Basis

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    Hepatocellular carcinoma (HCC) incidence is rising. This paper summarises the current state of knowledge and recent discoveries in the cellular and physiological mechanisms leading to the development of liver cancer, especially HCC, and liver metastases. After reviewing normal hepatic cytoarchitecture and immunological characteristics, the paper addresses the pathophysiological factors that cause liver damage and predispose to neoplasia. Particular attention is given to chronic liver diseases, metabolic syndrome and the impact of altered gut microbiota, disrupted circadian rhythm and psychological stress. Improved knowledge of the multifactorial aetiology of HCC has important implications for the prevention and treatment of this cancer and of liver metastases in general
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