Analysis of plasma instabilities and verification of the BOUT code for the Large Plasma Device

The properties of linear instabilities in the Large Plasma Device [W. Gekelman et al., Rev. Sci. Inst., 62, 2875 (1991)] are studied both through analytic calculations and solving numerically a system of linearized collisional plasma fluid equations using the 3D fluid code BOUT [M. Umansky et al., Contrib. Plasma Phys. 180, 887 (2009)], which has been successfully modified to treat cylindrical geometry. Instability drive from plasma pressure gradients and flows is considered, focusing on resistive drift waves, the Kelvin-Helmholtz and rotational interchange instabilities. A general linear dispersion relation for partially ionized collisional plasmas including these modes is derived and analyzed. For LAPD relevant profiles including strongly driven flows it is found that all three modes can have comparable growth rates and frequencies. Detailed comparison with solutions of the analytic dispersion relation demonstrates that BOUT accurately reproduces all characteristics of linear modes in this system.Comment: Published in Physics of Plasmas, 17, 102107 (2010

Influence of point defects on magnetic vortex structures

We employed micro-Hall magnetometry and micromagnetic simulations to investigate magnetic vortex pinning at single point defects in individual submicron-sized permalloy disks. Small ferromagnetic particles containing artificial point defects can be fabricated by using an image reversal electron beam lithography process. Corresponding micromagnetic calculations, modeling the defects within the disks as holes, give reasonable agreement between experimental and simulated pinning and depinning field values

The microscopic nature of localization in the quantum Hall effect

The quantum Hall effect arises from the interplay between localized and extended states that form when electrons, confined to two dimensions, are subject to a perpendicular magnetic field. The effect involves exact quantization of all the electronic transport properties due to particle localization. In the conventional theory of the quantum Hall effect, strong-field localization is associated with a single-particle drift motion of electrons along contours of constant disorder potential. Transport experiments that probe the extended states in the transition regions between quantum Hall phases have been used to test both the theory and its implications for quantum Hall phase transitions. Although several experiments on highly disordered samples have affirmed the validity of the single-particle picture, other experiments and some recent theories have found deviations from the predicted universal behaviour. Here we use a scanning single-electron transistor to probe the individual localized states, which we find to be strikingly different from the predictions of single-particle theory. The states are mainly determined by Coulomb interactions, and appear only when quantization of kinetic energy limits the screening ability of electrons. We conclude that the quantum Hall effect has a greater diversity of regimes and phase transitions than predicted by the single-particle framework. Our experiments suggest a unified picture of localization in which the single-particle model is valid only in the limit of strong disorder

Electrometry Using Coherent Exchange Oscillations in a Singlet-Triplet-Qubit

Two level systems that can be reliably controlled and measured hold promise in both metrology and as qubits for quantum information science (QIS). When prepared in a superposition of two states and allowed to evolve freely, the state of the system precesses with a frequency proportional to the splitting between the states. In QIS,this precession forms the basis for universal control of the qubit,and in metrology the frequency of the precession provides a sensitive measurement of the splitting. However, on a timescale of the coherence time, $T_2$, the qubit loses its quantum information due to interactions with its noisy environment, causing qubit oscillations to decay and setting a limit on the fidelity of quantum control and the precision of qubit-based measurements. Understanding how the qubit couples to its environment and the dynamics of the noise in the environment are therefore key to effective QIS experiments and metrology. Here we show measurements of the level splitting and dephasing due to voltage noise of a GaAs singlet-triplet qubit during exchange oscillations. Using free evolution and Hahn echo experiments we probe the low frequency and high frequency environmental fluctuations, respectively. The measured fluctuations at high frequencies are small, allowing the qubit to be used as a charge sensor with a sensitivity of $2 \times 10^{-8} e/\sqrt{\mathrm{Hz}}$, two orders of magnitude better than the quantum limit for an RF single electron transistor (RF-SET). We find that the dephasing is due to non-Markovian voltage fluctuations in both regimes and exhibits an unexpected temperature dependence. Based on these measurements we provide recommendations for improving $T_2$ in future experiments, allowing for higher fidelity operations and improved charge sensitivity