Luminescence in Slipped and Dislocation-Free Laser-Annealed Silicon

Photoluminescence of cw laser-annealed silicon shows a dramatic difference in electronic behavior of the reconstructed material depending upon either creation or suppression of dislocations. Beyond a critical exposure time slip appears, and the luminescence of these samples is dominated by dislocation-related defect levels

Picosecond Laser Pulse Irradiation of Crystalline Silicon

Morphology changes introduced by picosecond laser pulses at λ = 532 nm and 355 nm in (111) and (100) silicon samples are studied by means of optical and high-voltage electron microscopy. Depending on energy fluence, orientation and wavelength, amorphous or highly defective regions may be created. From an analysis of damage thresholds and damage depth distributions it is concluded that melting and energy confinement precedes the formation of the structural changes

Generation und Analyse von Laser induzierten Defekten in Silizium

SIGLEDEGerman