A WN_x Gate Self-Aligned GaAs p-Channel MESFET for Complementary Logic

The Schottky barrier of reactively sputtered WN_x to p-type GaAs has been investigated. Postdeposition heat treatments above 500°C led to a reduction in the barrier height but for lamp annealing at 740°C the barrier heights are 0.68 eV. Self-aligned p-channel MESFET's were fabricated with WN_x gates by a refractory metal process involving the above heat treatment. The Schottky-barrier heights were close to the expected values. K-values of FET's with 2 μm × 24 μm gates were 0.088 mA/V^2, consistent with previously reported results. SPICE simulation studies carried out for a variety of complementary-type logic gates, indicate that power dissipation × delay time products of less than 10 fJ may be achievable over the power range 5-50 μW/gate. Thus complementary logic may be useful for applications where low power dissipation is at a premium

A 2K-Gate GaAs Gate Array with a WN Gate Self-Alignment FET Process

A 2K-gate DCFL GaAs gate array has been successfully fabricated with a WN gate self-alignment GaAs MESFET process. Chip size was 4.59 mm×4.73 mm. A basic cell, consisting of one DFET and three EFET’s, can be programmed as an inverter or a two or three-INPUT NOR gate by personalizing with first- and second-level interconnection and via hole masks. The I/O buffer was implemented with a large DCFL push-pull circuit. The unloaded propagation delay time was 42 ps/gate at a power dissipation of 0.5 mW/gate. The increases in delay time due to various loading capacitances were 11-ps/fan-in, 16-ps/fan-out, 59-ps/1-mm interconnection and 0.95 ps/crossover (area: 2 μm×3 μm). An 8×8-bit parallel multiplier was fabricated on this gate-array chip. A multiplication time of 8.5 ns was achieved at a power dissipation of about 400 mW including I/O buffers

A 42ps 2K-gate GaAs gate array

1985 IEEE International Solid-State Circuits Conference (ISSCC 85), Thursday, FEB 14, 1985 at Trianon Ballroom, 4:15 p.m

Cross‐sectional study of therapy‐related expectations/concerns of patients with metastatic renal cell carcinoma and physicians in Japan

Abstract Objective To achieve patient‐centricity in metastatic renal cell carcinoma (mRCC) treatment, it is essential to clarify the differences in perspectives between patients and physicians. This cross‐sectional analysis of a web survey aimed to clarify the differences in expectations and concerns between mRCC patients and physicians regarding systemic mRCC therapy in Japan. Methods Surveys from 83 patients and 165 physicians were analyzed. Results The top three most significant differences in expectations of systemic therapy between patients and physicians (patient‐based physician value) were “Chance of achieving treatment‐free status” (−30.1%, p < 0.001), “Longer survival” (+25.8%, p < 0.001), and “Chance of eliminating all evidence of disease” (−25.6%, p < 0.001). The top three most significant differences in concerns for systemic therapy between patients and physicians (patient‐based physician value) were “Lack of efficacy” (+36.1%, p < 0.001), “Lack of knowledge of treatment” (−28.2%, p < 0.001), and “Daily activities affected by side effects” (+22.3%, p < 0.001). Diarrhea, fatigue/malaise, and nausea/vomiting were patients' most distressing adverse events; 50.6% of patients had difficulty telling their physicians about adverse events such as fatigue, anxiety, and depression. Conclusions This study demonstrated a gap between patients with mRCC and physicians in their expectations and concerns for systemic therapy. Japanese patients with mRCC suffer from a number of adverse events, some of which are not shared with physicians. This study highlights the importance of communicating well with patients in clinical practice to achieve patient‐centricity in systemic treatment for mRCC

Large As sublattice distortion in sphalerite ZnSnAs2 thin films revealed by x-ray fluorescence holography

The structure of a ZnSnAs2 thin film epitaxially grown on an InP substrate was evaluated using x-ray fluorescence holography. The reconstructed three-dimensional atomic images clearly show that the crystal structure of the ZnSnAs2 thin film is mainly of the sphalerite type, in contrast to the bulk form. A large disordering of the As layers is observed, whereas the positions of the Zn/Sn atoms are relatively stable. The analysis of the data indicates that the As layers serve as a buffer and relax the strain caused by the random occupation of Zn and Sn atoms. These results provide further understanding and a means of controlling the growth of Mn-doped ZnSnAs2, a high-Tc diluted magnetic semiconductor