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3 research outputs found
Minimization of leakage current of recessed gate AlGaN/GaN HEMTs by optimizing the dry-etching process
Author
A. Bykhovski
Bertram Kuhn
+23 more
C.-H. Chen
F. Ren
Ferdinand Scholz
H.H. Berger
Heinz Schweizer
J. Burm
J. Burm
M.A. Khan
M.A. Khan
M.S. Shur
O. Ambacher
O. Ambacher
Oliver Breitschädel
S. Nakamura
S.C. Binary
S.C. Binary
S.N. Mohammad
T.P. Chow
U.V. Bhapkar
Y.-F. Wu
Y.-F. Wu
Z. Fan
Z.-F. Fan
Publication venue
'Springer Science and Business Media LLC'
Publication date
Field of study
No full text
Crossref
Steady-state electron transport in the III–V nitride semiconductors: A sensitivity analysis
Author
A.D. Bykhovski
B. Gelmont
+34 more
B.E. Foutz
B.E. Foutz
B.E. Foutz
Brian E. Foutz
D.K. Ferry
E. Bellotti
H. Morkoç
H.P. Maruska
J. Kolník
J.D. Albrecht
J.D. Albrecht
J.D. Albrecht
K. Seeger
Lester F. Eastman
M. Shur
M.A. Littlejohn
M.A. Littlejohn
M.S. Shur
Michael S. Shur
N.G. Weimann
P. Lugli
S. Krishnamurthy
S. Nakamura
S. Strite
S.J. Pearton
S.K. O’Leary
S.K. O’Leary
S.K. O’Leary
S.N. Mohammad
Stephen K. O’Leary
U.V. Bhapkar
V.W.L. Chin
W. Fawcett
W.R.L. Lambrecht
Publication venue
'Springer Science and Business Media LLC'
Publication date
Field of study
No full text
Crossref
Design of edge termination for GaN power Schottky diodes
Author
A. Itoh
A.P. Zhang
+49 more
A.P. Zhang
A.P. Zhang
A.R. Hefner Jr.
B. Peres
B. S. Shelton
D.C. Look
D.K. Gaskill
D.T. Morisette
D.T. Morisette
E.G. Brazel
E.R. Brown
F. Ren
I. Oguzman
J. R. Laroche
J.B. Casady
J.L. Hudgins
J.W. Johnson
J.W.P. Hsu
J.W.P. Hsu
K. Fujihira
K. Ip
K. Kunihiro
K. W. Baik
K.H. Baik
K.H. Baik
M. Farahmand
M. Rubin
M. Trivedi
M.C. Tarplee
M.S. Shur
M.S. Shur
N.V. Dyakonova
P. Alexandrov
P.G. Neudeck
P.G. Neudeck
R. Held
R. Singh
R.T. Kemerley
S. J. Pearton
S.K. Hong
S.K. Hong
T. Ericsen
T. Heydt
T.G. Zhu
U.V. Bhapkar
V. Khemka
V. Saxena
V.W.L. Chin
Y. Huang
Publication venue
'Springer Science and Business Media LLC'
Publication date
Field of study
No full text
Crossref